CA2078483A1 - Surface emitting laser - Google Patents
Surface emitting laserInfo
- Publication number
- CA2078483A1 CA2078483A1 CA2078483A CA2078483A CA2078483A1 CA 2078483 A1 CA2078483 A1 CA 2078483A1 CA 2078483 A CA2078483 A CA 2078483A CA 2078483 A CA2078483 A CA 2078483A CA 2078483 A1 CA2078483 A1 CA 2078483A1
- Authority
- CA
- Canada
- Prior art keywords
- laser
- consequence
- elimination
- pump circuit
- emitting laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Abstract
Reduction of laser threshold in an electrically pumped vertical cavity laser is the consequence of interpositioning of an electrode layer intermediate the active, photon producing region, and at least one of the two Distributed Bragg Reflectors defining the laser cavity. The advance is a consequence of the lowered pump circuit resistance due to elimination of one or both DBRs - in particular, to elimination of the p-doped DBR - from the pump circuit.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US786,653 | 1991-11-01 | ||
US07/786,653 US5206872A (en) | 1991-11-01 | 1991-11-01 | Surface emitting laser |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2078483A1 true CA2078483A1 (en) | 1993-05-02 |
CA2078483C CA2078483C (en) | 1997-08-05 |
Family
ID=25139226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002078483A Expired - Fee Related CA2078483C (en) | 1991-11-01 | 1992-09-17 | Surface emitting laser |
Country Status (8)
Country | Link |
---|---|
US (1) | US5206872A (en) |
EP (1) | EP0540239B1 (en) |
JP (1) | JP3373230B2 (en) |
KR (1) | KR100249072B1 (en) |
CA (1) | CA2078483C (en) |
DE (1) | DE69205388T2 (en) |
HK (1) | HK33996A (en) |
TW (1) | TW295315U (en) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5253262A (en) * | 1990-10-31 | 1993-10-12 | Kabushiki Kaisha Toshiba | Semiconductor laser device with multi-directional reflector arranged therein |
US5404373A (en) * | 1991-11-08 | 1995-04-04 | University Of New Mexico | Electro-optical device |
US5353295A (en) * | 1992-08-10 | 1994-10-04 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser device with coupled cavities |
US5572540A (en) * | 1992-08-11 | 1996-11-05 | University Of New Mexico | Two-dimensional opto-electronic switching arrays |
US5343487A (en) * | 1992-10-01 | 1994-08-30 | Optical Concepts, Inc. | Electrical pumping scheme for vertical-cavity surface-emitting lasers |
US5337327A (en) * | 1993-02-22 | 1994-08-09 | Motorola, Inc. | VCSEL with lateral index guide |
US5416044A (en) * | 1993-03-12 | 1995-05-16 | Matsushita Electric Industrial Co., Ltd. | Method for producing a surface-emitting laser |
SE501635C2 (en) * | 1993-08-20 | 1995-04-03 | Asea Brown Boveri | Method and apparatus for transmitting light with integrated excitation source |
GB2295269A (en) * | 1994-11-14 | 1996-05-22 | Sharp Kk | Resonant cavity laser having oxide spacer region |
US5513203A (en) * | 1995-04-05 | 1996-04-30 | At&T Corp. | Surface emitting laser having improved pumping efficiency |
US5513204A (en) * | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
US5659568A (en) * | 1995-05-23 | 1997-08-19 | Hewlett-Packard Company | Low noise surface emitting laser for multimode optical link applications |
US5574738A (en) * | 1995-06-07 | 1996-11-12 | Honeywell Inc. | Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser |
US5724376A (en) * | 1995-11-30 | 1998-03-03 | Hewlett-Packard Company | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding |
JPH09232631A (en) * | 1996-02-27 | 1997-09-05 | Sumitomo Chem Co Ltd | 3-5 compound semiconductor light emitting device |
US5729566A (en) * | 1996-06-07 | 1998-03-17 | Picolight Incorporated | Light emitting device having an electrical contact through a layer containing oxidized material |
US5963568A (en) * | 1996-07-01 | 1999-10-05 | Xerox Corporation | Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors |
US5757837A (en) * | 1996-10-16 | 1998-05-26 | The Regents Of The University Of California | Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same |
EP0980595B1 (en) * | 1997-05-09 | 2004-10-27 | The Trustees of Princeton University | Organic lasers |
US5960024A (en) | 1998-03-30 | 1999-09-28 | Bandwidth Unlimited, Inc. | Vertical optical cavities produced with selective area epitaxy |
US6487231B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6760357B1 (en) | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
US6493373B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6535541B1 (en) | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US5991326A (en) | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6493371B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493372B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6226425B1 (en) | 1999-02-24 | 2001-05-01 | Bandwidth9 | Flexible optical multiplexer |
US6275513B1 (en) | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
US6233263B1 (en) | 1999-06-04 | 2001-05-15 | Bandwidth9 | Monitoring and control assembly for wavelength stabilized optical system |
US6625195B1 (en) * | 1999-07-20 | 2003-09-23 | Joseph Reid Henrichs | Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light |
JP3917790B2 (en) * | 1999-12-13 | 2007-05-23 | 日鉄住金鋼板株式会社 | Insulating panel manufacturing method |
US6879615B2 (en) * | 2000-01-19 | 2005-04-12 | Joseph Reid Henrichs | FCSEL that frequency doubles its output emissions using sum-frequency generation |
US6704336B1 (en) * | 2000-07-22 | 2004-03-09 | Joseph Reid Henrichs | Folded cavity surface emitting laser |
US6628685B1 (en) * | 2000-08-21 | 2003-09-30 | Chan-Long Shieh | Method of fabricating long-wavelength VCSEL and apparatus |
JP2002329928A (en) * | 2001-02-27 | 2002-11-15 | Ricoh Co Ltd | Optical communication system |
JP2002185043A (en) * | 2001-10-19 | 2002-06-28 | Sumitomo Chem Co Ltd | Method of manufacturing class iii-v compound semiconductor light-emitting element |
US6618414B1 (en) * | 2002-03-25 | 2003-09-09 | Optical Communication Products, Inc. | Hybrid vertical cavity laser with buried interface |
US7277461B2 (en) * | 2003-06-27 | 2007-10-02 | Finisar Corporation | Dielectric VCSEL gain guide |
KR20050120483A (en) * | 2004-06-19 | 2005-12-22 | 삼성전자주식회사 | High efficient surface emitting laser device, laser pumping unit for the laser device and method for fabricating the laser pumping unit |
KR101100433B1 (en) * | 2005-12-24 | 2011-12-30 | 삼성전자주식회사 | End pumping vertical external cavity surface emitting laser apparatus |
KR101547327B1 (en) * | 2009-01-15 | 2015-09-07 | 삼성전자주식회사 | Optical image modulator and optical apparatus comprising the same and methods of manufacturing and operating optical image modulator |
JP6102525B2 (en) * | 2012-07-23 | 2017-03-29 | 株式会社リコー | Surface emitting laser element and atomic oscillator |
US9979158B1 (en) * | 2017-01-12 | 2018-05-22 | Technische Universitaet Berlin | Vertical-cavity surface-emitting laser |
KR102336953B1 (en) * | 2021-03-22 | 2021-12-09 | (주)영화 | Method and apparatus for manufacutring contstruction prefabricated panels capable of recycling insulation scrap |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1382401A (en) * | 1973-02-13 | 1975-01-29 | Inst Poluprovodnikov | Solid state laser |
US4999842A (en) * | 1989-03-01 | 1991-03-12 | At&T Bell Laboratories | Quantum well vertical cavity laser |
US4991179A (en) * | 1989-04-26 | 1991-02-05 | At&T Bell Laboratories | Electrically pumped vertical cavity laser |
-
1991
- 1991-11-01 US US07/786,653 patent/US5206872A/en not_active Expired - Lifetime
-
1992
- 1992-05-22 TW TW084204696U patent/TW295315U/en unknown
- 1992-09-17 CA CA002078483A patent/CA2078483C/en not_active Expired - Fee Related
- 1992-10-21 EP EP92309620A patent/EP0540239B1/en not_active Expired - Lifetime
- 1992-10-21 DE DE69205388T patent/DE69205388T2/en not_active Expired - Fee Related
- 1992-10-27 KR KR1019920019801A patent/KR100249072B1/en not_active IP Right Cessation
- 1992-10-30 JP JP29312392A patent/JP3373230B2/en not_active Expired - Lifetime
-
1996
- 1996-02-29 HK HK33996A patent/HK33996A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW295315U (en) | 1997-01-01 |
HK33996A (en) | 1996-03-08 |
US5206872A (en) | 1993-04-27 |
DE69205388T2 (en) | 1996-04-18 |
KR930011343A (en) | 1993-06-24 |
JPH05218579A (en) | 1993-08-27 |
CA2078483C (en) | 1997-08-05 |
EP0540239A1 (en) | 1993-05-05 |
KR100249072B1 (en) | 2000-03-15 |
JP3373230B2 (en) | 2003-02-04 |
EP0540239B1 (en) | 1995-10-11 |
DE69205388D1 (en) | 1995-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |