CA2051112A1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
CA2051112A1
CA2051112A1 CA2051112A CA2051112A CA2051112A1 CA 2051112 A1 CA2051112 A1 CA 2051112A1 CA 2051112 A CA2051112 A CA 2051112A CA 2051112 A CA2051112 A CA 2051112A CA 2051112 A1 CA2051112 A1 CA 2051112A1
Authority
CA
Canada
Prior art keywords
semiconductor device
section
est absente
substitute
present cette
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2051112A
Other languages
French (fr)
Other versions
CA2051112C (en
Inventor
Alan Ernest Owen
Anthony James Snell
Janos Hajto
Peter George Lecomber
Mervyn John Rose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2051112A1 publication Critical patent/CA2051112A1/en
Application granted granted Critical
Publication of CA2051112C publication Critical patent/CA2051112C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making

Abstract

SUBSTITUTE
REMPLACEMENT
SECTION is not Present Cette Section est Absente
CA002051112A 1989-05-11 1990-05-04 Semiconductor device Expired - Fee Related CA2051112C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB898910854A GB8910854D0 (en) 1989-05-11 1989-05-11 Semiconductor device
GB8910854.2 1989-05-11

Publications (2)

Publication Number Publication Date
CA2051112A1 true CA2051112A1 (en) 1990-11-12
CA2051112C CA2051112C (en) 1994-03-29

Family

ID=10656585

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002051112A Expired - Fee Related CA2051112C (en) 1989-05-11 1990-05-04 Semiconductor device

Country Status (10)

Country Link
US (1) US5360981A (en)
EP (1) EP0471737B1 (en)
JP (1) JPH0758813B2 (en)
AT (1) ATE115773T1 (en)
AU (1) AU628562B2 (en)
CA (1) CA2051112C (en)
DE (1) DE69015177T2 (en)
GB (1) GB8910854D0 (en)
HK (1) HK138296A (en)
WO (1) WO1990013921A1 (en)

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HK138296A (en) 1996-08-02
AU628562B2 (en) 1992-09-17
DE69015177D1 (en) 1995-01-26
EP0471737A1 (en) 1992-02-26
ATE115773T1 (en) 1994-12-15
AU5565590A (en) 1990-11-29
US5360981A (en) 1994-11-01
CA2051112C (en) 1994-03-29
GB8910854D0 (en) 1989-06-28
WO1990013921A1 (en) 1990-11-15
JPH0758813B2 (en) 1995-06-21
JPH04504331A (en) 1992-07-30
EP0471737B1 (en) 1994-12-14
DE69015177T2 (en) 1995-05-04

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