CA1328183C - Optical module - Google Patents
Optical moduleInfo
- Publication number
- CA1328183C CA1328183C CA000609006A CA609006A CA1328183C CA 1328183 C CA1328183 C CA 1328183C CA 000609006 A CA000609006 A CA 000609006A CA 609006 A CA609006 A CA 609006A CA 1328183 C CA1328183 C CA 1328183C
- Authority
- CA
- Canada
- Prior art keywords
- package
- substrate
- land
- optical
- optical module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000013307 optical fiber Substances 0.000 claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims abstract description 8
- 230000008878 coupling Effects 0.000 claims 10
- 238000010168 coupling process Methods 0.000 claims 10
- 238000005859 coupling reaction Methods 0.000 claims 10
- 239000000463 material Substances 0.000 claims 6
- 239000000919 ceramic Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Abstract of the Disclosure In an optical module with a substrate having an optical unit mounted thereon being provided on a bottom of a package and having the optical unit optically coupled with an end of an optical fiber extending into the package, a chip carrier including the optical unit is die-bonded to a conductive land formed on the substrate, and a recess is formed at an area of the bottom of the package which faces the land. Thus, a capacitance of a parallel-plate capacitor formed by the land and the bottom of the package, which prevents a high speed operation, is rendered negligibly small.
Description
~32~3 The present invention relates to an optical module for use with an optical communication ~ys~em such as data link or an optical LAN which uses light as an in~ormation transmission medium.
In ~ known optical module, a semiconductor laser or a light emitting dlode, whi~h is a light emitting element, or a PIN photo-diode which is a light de~ecting element i~ mounted as an optical unit, which is optically couple~ with an optical fiber in a package. However, a re~ponse ~requency band of the known optical module i~ not sufficiently high.
The present invention provides an optical module with a $ub~trate having an optical unit mounted thereon being provided at a bottom of a package and having the optical unit optically coupled with an end of an optical fiber extending into the package, a chip carrier including the optical unit being die-bonded to a c~nductive land formed on the substrate and a recess being formed at an area of ~he bottom of the package which face th~ land.
~;~ i .. . . .
. .
.
. .
.
:: .
t 32~183 The present invention will become more Pully understood from the detailed desaription given herein~low and the accompanying drawings in whlch:
FIG. 1 is a perspective view showing a main part of an optical module in accordanGe with one embodiment of the present invention, FIG. 2 is a ~ectional view taken along a line II-II of FIG. 1, FI~. 3 is a perspective view illustrating a manner of die-bonding of a chip carrier 2 to a hybrid IC substrate 6, and FI~. 4 is a circuit diagram of a light receiver which use6 a PIN photo-diode.
As shown in Fig.1 and 2, a hybrid IC substrate 6 made of ceramics is mounted on an inner bottom of a package 8 made of metal. A chip carrier 2 is mounted on the hybrid IC
substrate 6.
~ 2 .. .,. ~, ,: . . ..
- ~ ~ '1"- ' . . .
- ~ . .
,. ~.. ~ .. , 132~18~3 As shown in Fig. 3, the chip carrier 2 is o~
parallelepiped and ~ade o~ ceramics. A PIN photo-diode 3 is mounted on a front plane of the chip carrier 2. Two terminals 5 which are to be connected to an anode and a cathode of th~ PIN photo-diode 3 on the chip carrier 2 are ~ormed to extend from the front plane to a bottom plane.
Those termical~ 5 are formed by ~etallizing selected ~ur~a¢e area~ of the chip carrier 2. On the other hand, two conductive lands 7 which serve as electrode~ are Pormed on a sur~ace o~ the hybrid IC ~ub~trate 6. The terminals 5 of the chip carrier 2 are die-bonded to the lands 7. The land 7 are designed to have wider areas than the terminals 5 assuming possible misalignment in mounting the chip carrier 2. With present technique, the area o~ the land 7 is in the order of lmm X 2mm at minimum.
.
The PIN photo-diode 3 mounted on the chip carri~r 2 faces a leading end plane of an optical fib~r 1 in a c ~
~; .
, 1 ~2~8~
1 package 8. The leading end of the optical fiber 1 is inserted into the package 8 through an opening formed on a side wall of the package 8. A cover of the optical fiber 1 is striped off at the leading end thereof so that a glass fiber is exposed. The exposed area is metal-plated except for the leading end plane. The metal-plated area la is positioned on a fixed member 9 mounted on the bottom of the package 8 and fixed ~hereto by soldering. The metal-plated area la of the optical fiber 1 is positioned such that a light emitted from the leading end plane of the optical fiber 1 is sufficiently directed to a photo-sensing area of the PIN photo-diode 3. In this manner, the optical fiber 1 and the PIN
photo-diode 3 are optically coupled.
A recess 10 is formed at the inner bottom of the package 8. The recess 10 is formed at a postion which faces the lands 7 with the intervention of the hybrid IC
substrate 6 when the hybrid IC substrate 6 is mounted in the package 8. Thus, the lands 7 and the bottom of the package 8 are separated from each other by a space. The recess 10 serves to render a capacitance of a parallel-plate capacitor, which is essentially formed by t.he lands 7 and the bottom of the package 8, negligibly small.
The parallel-plate capacitor which is essentially formed by the lands 7 and the bottom of the package 8 is now explained. Fig. 4 shows an embodiment of a light ~ , ~328183 1 receiver which uses the PIN photo-diode 3. The parallel-plate capacitor formed by the lands 7 and the bottom of the package 8 function as an input capacitance Cpal o~
an amplifier 12. A response frequency band of the light receiver is determined by a time constant T Which is determined by a resistance Rin of an input resistor 11, a junction capacitance Cpd of the PIN photo-diode 3 and the input capacitance Cpal. As the time constant T
increases, amount of information per unit time decreases. The time constant T is given by T=(Cpd+Cpal)-Rin The junction capacitance Cpd of the PIN photo-diode 3 used for high speed optical communication is very small, usually in the order of 0.3 ~ 0.4 pF. Accordingly, the affect of the input capacitance Cpal to the time constant T is very great and it should be as small as -possible.
If the recess 10 is not formed, the capacitance Cpal of the parallel-plate capacitor is 0.46 pF assuming that the area of the land 7 is lmm x 2mm, a dielectric constant f of the hybrid IC substrate 6 is 9, and a thickness thereof is 350 ~m, and it is 0.25 pF assuming that the thickness of the hybrid IC substrate 6 is 650 ~m. This capacitance is substantially equal to or larger than the capacitance of Cpd ~0.3 ~ 0.4 pF). It is thus seen that the affect to the time constant T is very great.
'' ' '` ''~:
.
.
~32~1 ~3 In the optical module of the present embodiment, ~ince the recess 10 is ~ormed in the inner bottom of the package 8, the capacitance of the parallel-plate capacitor formed by the lands 7 and the bottom of the package 8 is small enough to permit neglection o~ the input capacitance Cpal of the amplifier 12. As a result, the time constant T of the light receiver ~s reduced and the response frequency band is increased, This ~mbodiment is a receiving optic~l module which uses the PIN photo-diode ~ a the optical unit which is optically coupled to the optical fiber 1. The same problem is encountered in a transmitting optical module which uses a light emitting element such as LED or loser diode as the optical unit, and the present invention is al~o applicable to such a transmitting optical module.
, , ,
In ~ known optical module, a semiconductor laser or a light emitting dlode, whi~h is a light emitting element, or a PIN photo-diode which is a light de~ecting element i~ mounted as an optical unit, which is optically couple~ with an optical fiber in a package. However, a re~ponse ~requency band of the known optical module i~ not sufficiently high.
The present invention provides an optical module with a $ub~trate having an optical unit mounted thereon being provided at a bottom of a package and having the optical unit optically coupled with an end of an optical fiber extending into the package, a chip carrier including the optical unit being die-bonded to a c~nductive land formed on the substrate and a recess being formed at an area of ~he bottom of the package which face th~ land.
~;~ i .. . . .
. .
.
. .
.
:: .
t 32~183 The present invention will become more Pully understood from the detailed desaription given herein~low and the accompanying drawings in whlch:
FIG. 1 is a perspective view showing a main part of an optical module in accordanGe with one embodiment of the present invention, FIG. 2 is a ~ectional view taken along a line II-II of FIG. 1, FI~. 3 is a perspective view illustrating a manner of die-bonding of a chip carrier 2 to a hybrid IC substrate 6, and FI~. 4 is a circuit diagram of a light receiver which use6 a PIN photo-diode.
As shown in Fig.1 and 2, a hybrid IC substrate 6 made of ceramics is mounted on an inner bottom of a package 8 made of metal. A chip carrier 2 is mounted on the hybrid IC
substrate 6.
~ 2 .. .,. ~, ,: . . ..
- ~ ~ '1"- ' . . .
- ~ . .
,. ~.. ~ .. , 132~18~3 As shown in Fig. 3, the chip carrier 2 is o~
parallelepiped and ~ade o~ ceramics. A PIN photo-diode 3 is mounted on a front plane of the chip carrier 2. Two terminals 5 which are to be connected to an anode and a cathode of th~ PIN photo-diode 3 on the chip carrier 2 are ~ormed to extend from the front plane to a bottom plane.
Those termical~ 5 are formed by ~etallizing selected ~ur~a¢e area~ of the chip carrier 2. On the other hand, two conductive lands 7 which serve as electrode~ are Pormed on a sur~ace o~ the hybrid IC ~ub~trate 6. The terminals 5 of the chip carrier 2 are die-bonded to the lands 7. The land 7 are designed to have wider areas than the terminals 5 assuming possible misalignment in mounting the chip carrier 2. With present technique, the area o~ the land 7 is in the order of lmm X 2mm at minimum.
.
The PIN photo-diode 3 mounted on the chip carri~r 2 faces a leading end plane of an optical fib~r 1 in a c ~
~; .
, 1 ~2~8~
1 package 8. The leading end of the optical fiber 1 is inserted into the package 8 through an opening formed on a side wall of the package 8. A cover of the optical fiber 1 is striped off at the leading end thereof so that a glass fiber is exposed. The exposed area is metal-plated except for the leading end plane. The metal-plated area la is positioned on a fixed member 9 mounted on the bottom of the package 8 and fixed ~hereto by soldering. The metal-plated area la of the optical fiber 1 is positioned such that a light emitted from the leading end plane of the optical fiber 1 is sufficiently directed to a photo-sensing area of the PIN photo-diode 3. In this manner, the optical fiber 1 and the PIN
photo-diode 3 are optically coupled.
A recess 10 is formed at the inner bottom of the package 8. The recess 10 is formed at a postion which faces the lands 7 with the intervention of the hybrid IC
substrate 6 when the hybrid IC substrate 6 is mounted in the package 8. Thus, the lands 7 and the bottom of the package 8 are separated from each other by a space. The recess 10 serves to render a capacitance of a parallel-plate capacitor, which is essentially formed by t.he lands 7 and the bottom of the package 8, negligibly small.
The parallel-plate capacitor which is essentially formed by the lands 7 and the bottom of the package 8 is now explained. Fig. 4 shows an embodiment of a light ~ , ~328183 1 receiver which uses the PIN photo-diode 3. The parallel-plate capacitor formed by the lands 7 and the bottom of the package 8 function as an input capacitance Cpal o~
an amplifier 12. A response frequency band of the light receiver is determined by a time constant T Which is determined by a resistance Rin of an input resistor 11, a junction capacitance Cpd of the PIN photo-diode 3 and the input capacitance Cpal. As the time constant T
increases, amount of information per unit time decreases. The time constant T is given by T=(Cpd+Cpal)-Rin The junction capacitance Cpd of the PIN photo-diode 3 used for high speed optical communication is very small, usually in the order of 0.3 ~ 0.4 pF. Accordingly, the affect of the input capacitance Cpal to the time constant T is very great and it should be as small as -possible.
If the recess 10 is not formed, the capacitance Cpal of the parallel-plate capacitor is 0.46 pF assuming that the area of the land 7 is lmm x 2mm, a dielectric constant f of the hybrid IC substrate 6 is 9, and a thickness thereof is 350 ~m, and it is 0.25 pF assuming that the thickness of the hybrid IC substrate 6 is 650 ~m. This capacitance is substantially equal to or larger than the capacitance of Cpd ~0.3 ~ 0.4 pF). It is thus seen that the affect to the time constant T is very great.
'' ' '` ''~:
.
.
~32~1 ~3 In the optical module of the present embodiment, ~ince the recess 10 is ~ormed in the inner bottom of the package 8, the capacitance of the parallel-plate capacitor formed by the lands 7 and the bottom of the package 8 is small enough to permit neglection o~ the input capacitance Cpal of the amplifier 12. As a result, the time constant T of the light receiver ~s reduced and the response frequency band is increased, This ~mbodiment is a receiving optic~l module which uses the PIN photo-diode ~ a the optical unit which is optically coupled to the optical fiber 1. The same problem is encountered in a transmitting optical module which uses a light emitting element such as LED or loser diode as the optical unit, and the present invention is al~o applicable to such a transmitting optical module.
, , ,
Claims (10)
1. An optical module coupling device comprising:
a metallic package; a substrate made of insulative material and provided on the bottom of said package, said substrate having a conductive land on one side thereof and an area in opposition to said land on the opposite side thereof; and a chip carrier mounted on said substrate and having an optical unit to be optically coupled with an end of an optical fiber extending into said package, said area of said substrate being spaced from said bottom of said package.
a metallic package; a substrate made of insulative material and provided on the bottom of said package, said substrate having a conductive land on one side thereof and an area in opposition to said land on the opposite side thereof; and a chip carrier mounted on said substrate and having an optical unit to be optically coupled with an end of an optical fiber extending into said package, said area of said substrate being spaced from said bottom of said package.
2. An optical module coupling device according to claim 1, wherein said optical unit comprises a photo-detecting element.
3. An optical module coupling device according to claim 1, wherein said optical unit comprises a light emitting device.
4. An optical module coupling device comprising:
a metallic package; a substrate made of insulative material and provided on the bottom of said package, said substrate having a conductive land on one side thereof and an area in opposition to said land on the opposite side thereof; and a chip carrier mounted on said substrate and having an optical unit to be optically coupled with an end of an optical fiber extending into said package, said bottom of said package having a recess located in opposition to said area.
a metallic package; a substrate made of insulative material and provided on the bottom of said package, said substrate having a conductive land on one side thereof and an area in opposition to said land on the opposite side thereof; and a chip carrier mounted on said substrate and having an optical unit to be optically coupled with an end of an optical fiber extending into said package, said bottom of said package having a recess located in opposition to said area.
5. An optical module coupling device according to claim 4, wherein said optical unit comprises a photo-detecting element.
6. An optical module coupling device according to claim 4, wherein said optical unit comprises a light emitting element.
7. An optical module coupling device comprising:
a metallic package; a substrate provided on the bottom of said package, said substrate having a conductive land thereon; and a chip carrier mounted on said substrate and having an optical unit to be optically coupled with an end of an optical fiber extending into said package; said substrate being spaced from said bottom of said package at an area opposite to said land, and said device including a parallel plate capacitor formed by said land and said bottom of said package.
a metallic package; a substrate provided on the bottom of said package, said substrate having a conductive land thereon; and a chip carrier mounted on said substrate and having an optical unit to be optically coupled with an end of an optical fiber extending into said package; said substrate being spaced from said bottom of said package at an area opposite to said land, and said device including a parallel plate capacitor formed by said land and said bottom of said package.
8. An optical module coupling device according to claim 7, wherein said substrate is made of insulative material.
9. An optical module coupling device comprising:
metallic package; a substrate made of insulative material and provided on the bottom of said package, said substrate having a conductive land thereon; and a chip carrier mounted on said substrate and having an optical unit to be optically coupled with an end of an optical fiber extending into said package; said bottom of said package having a recess at an area which is opposite to said land, and said device including a parallel plate capacitor formed by said land and said bottom of said package.
metallic package; a substrate made of insulative material and provided on the bottom of said package, said substrate having a conductive land thereon; and a chip carrier mounted on said substrate and having an optical unit to be optically coupled with an end of an optical fiber extending into said package; said bottom of said package having a recess at an area which is opposite to said land, and said device including a parallel plate capacitor formed by said land and said bottom of said package.
10. An optical module coupling device according to claim 9, wherein said chip carrier comprises insulative material and conductive terminals formed on said insulative material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP210119/1988 | 1988-08-24 | ||
| JP63210119A JPH0258008A (en) | 1988-08-24 | 1988-08-24 | Optical module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1328183C true CA1328183C (en) | 1994-04-05 |
Family
ID=16584111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000609006A Expired - Fee Related CA1328183C (en) | 1988-08-24 | 1989-08-22 | Optical module |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4955684A (en) |
| EP (1) | EP0355610B1 (en) |
| JP (1) | JPH0258008A (en) |
| KR (1) | KR910009139B1 (en) |
| CA (1) | CA1328183C (en) |
| DE (1) | DE68920509T2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3067151B2 (en) * | 1990-03-13 | 2000-07-17 | 日本電気株式会社 | Photoelectric conversion element subcarrier |
| US5223672A (en) * | 1990-06-11 | 1993-06-29 | Trw Inc. | Hermetically sealed aluminum package for hybrid microcircuits |
| US5111522A (en) * | 1991-02-19 | 1992-05-05 | At&T Bell Laboratories | Optical package with reduced deflection of the optical signal path |
| JPH10123375A (en) * | 1996-10-18 | 1998-05-15 | Ando Electric Co Ltd | Package for optical module |
| US7304293B2 (en) * | 2005-07-11 | 2007-12-04 | Fujifilm Corporation | Laser module |
| JP4940628B2 (en) * | 2005-10-31 | 2012-05-30 | ソニー株式会社 | Optical transmission module, optical transmission / reception module, and optical communication device |
| JP2007201213A (en) * | 2006-01-27 | 2007-08-09 | Opnext Japan Inc | Optical receiving module |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3307465A1 (en) * | 1983-03-03 | 1984-09-06 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | DEVICE FOR HOLDING A CONVERTER AND A LIGHT WAVE GUIDE ENDING BEFORE THE CONVERTER |
| CA1267468A (en) * | 1983-11-21 | 1990-04-03 | Hideaki Nishizawa | Optical device package |
| EP0184747A1 (en) * | 1984-12-13 | 1986-06-18 | Heimann GmbH | Infrared detector |
| JPS61183948A (en) * | 1985-02-12 | 1986-08-16 | Toshiba Corp | Connection substrate of microwave ic enclosure |
| US4722586A (en) * | 1985-04-12 | 1988-02-02 | Tektronix, Inc. | Electro-optical transducer module |
| FR2587844B1 (en) * | 1985-09-20 | 1987-11-20 | Thomson Csf | MICROWAVE CIRCUIT WITH LOW INTERFERENCE CAPACITIES |
| FI73386C (en) * | 1985-09-25 | 1987-10-09 | Wihuri Oy | A strong vapor-sterilizable multilayer film and packaging made of physiological solutions. |
-
1988
- 1988-08-24 JP JP63210119A patent/JPH0258008A/en active Granted
-
1989
- 1989-08-09 US US07/391,050 patent/US4955684A/en not_active Expired - Fee Related
- 1989-08-11 DE DE68920509T patent/DE68920509T2/en not_active Expired - Fee Related
- 1989-08-11 EP EP89114862A patent/EP0355610B1/en not_active Expired - Lifetime
- 1989-08-18 KR KR1019890011804A patent/KR910009139B1/en not_active IP Right Cessation
- 1989-08-22 CA CA000609006A patent/CA1328183C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE68920509D1 (en) | 1995-02-23 |
| EP0355610B1 (en) | 1995-01-11 |
| KR900003654A (en) | 1990-03-26 |
| JPH0258008A (en) | 1990-02-27 |
| DE68920509T2 (en) | 1995-09-07 |
| US4955684A (en) | 1990-09-11 |
| EP0355610A3 (en) | 1991-03-20 |
| EP0355610A2 (en) | 1990-02-28 |
| KR910009139B1 (en) | 1991-10-31 |
| JPH0517527B2 (en) | 1993-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |