CA1194764A - Stripping compositions and methods of stripping resists - Google Patents
Stripping compositions and methods of stripping resistsInfo
- Publication number
- CA1194764A CA1194764A CA000432806A CA432806A CA1194764A CA 1194764 A CA1194764 A CA 1194764A CA 000432806 A CA000432806 A CA 000432806A CA 432806 A CA432806 A CA 432806A CA 1194764 A CA1194764 A CA 1194764A
- Authority
- CA
- Canada
- Prior art keywords
- composition
- stripping
- unexposed photoresist
- substrate
- stripped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims abstract description 20
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 17
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 17
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 15
- -1 tetrahydrothiophene 1,1-dioxide compound Chemical class 0.000 claims abstract description 14
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical group CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 56
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 10
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 230000006872 improvement Effects 0.000 claims 14
- 229940113088 dimethylacetamide Drugs 0.000 claims 4
- 239000000463 material Substances 0.000 abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000000306 component Substances 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical class CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- ZCDDAQJNJWLCLL-UHFFFAOYSA-N 2-ethylthiolane 1,1-dioxide Chemical compound CCC1CCCS1(=O)=O ZCDDAQJNJWLCLL-UHFFFAOYSA-N 0.000 description 1
- PPDFQRAASCRJAH-UHFFFAOYSA-N 2-methylthiolane 1,1-dioxide Chemical compound CC1CCCS1(=O)=O PPDFQRAASCRJAH-UHFFFAOYSA-N 0.000 description 1
- DLABLFPCTXRQMY-UHFFFAOYSA-N 3-methylthiolane Chemical compound CC1CCSC1 DLABLFPCTXRQMY-UHFFFAOYSA-N 0.000 description 1
- CMJLMPKFQPJDKP-UHFFFAOYSA-N 3-methylthiolane 1,1-dioxide Chemical compound CC1CCS(=O)(=O)C1 CMJLMPKFQPJDKP-UHFFFAOYSA-N 0.000 description 1
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- NESLWCLHZZISNB-UHFFFAOYSA-M sodium phenolate Chemical compound [Na+].[O-]C1=CC=CC=C1 NESLWCLHZZISNB-UHFFFAOYSA-M 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Abstract
STRIPPING COMPOSITIONS
AND METHODS OF STRIPPING RESISTS
Abstract of the Disclosure Stripping compositions for removing resist materials from substrates comprise compositions of dimethylacetamide or dimethylformamide or a mixture thereof and a tetrahydrothiophene 1,1-dioxide compound. Either or both of polyethylene glycol and a diethylene glycol monoalkyl ether may be added to provide even more effective strippinq compositions.
AND METHODS OF STRIPPING RESISTS
Abstract of the Disclosure Stripping compositions for removing resist materials from substrates comprise compositions of dimethylacetamide or dimethylformamide or a mixture thereof and a tetrahydrothiophene 1,1-dioxide compound. Either or both of polyethylene glycol and a diethylene glycol monoalkyl ether may be added to provide even more effective strippinq compositions.
Description
B-l20l 3~'7~
STRIPPING COMPOSITIONS
AND MET~IODS OF STRIPPING RESISTS
Field of the Invention This invention relates to novel resist stripping compositions and to methods of stripping resists employing said stripping compositions. More particu-larly, this invention relates to a novel resist stripping composition comprising dimethylacetamide or dimethylformamide or a mixture thereof in combination with a tetrahydrothiophene 1,1-dioxide compound which can also include polyethylene glycol and/or a diethylene glycol monoalkyl ether and to stripping resists with said stripping compositions.
~ackground of the ~nvention Modern technology utilizes positive-type resist materials ror lithographically delineating patterns onto a substrate so that the patterns can be subse-quently etched or otherwise defined into the sub-strate material. The resist material is deposited as a film and the desired pattern is defined by exposing the resist film to eneryetic radiation. Thereafter the exposed regions are subject to a dissolution by a suitable developer liquid. After the pattern has been thus defined in the substrate the resist material must be completely removed from the substrate to avoid adversely affecting or hindering subsequent operations or processing steps.
It is necessary in such a photolithographic pro-cess that the photoresist material, following patterndelineation, be evenly and completely removed from all unexposed areas so as to permit further lithographic operations. Even the partial remains of a resist in an area to be further patterned is undesirable. Also, undesired resist residues between patterned lines can have deleterious eEfects on subsequent processes, such as metallization, or cause undesirable surface states and charges.
Heretofore the resist materials have been removed by stripping agents containing one or more of the following: halogenated hydrocarbons, for example, methylene chloride or tetrachloroethylene; amines and their derivatives such as di~ethylformamide, N-meth~rl-
STRIPPING COMPOSITIONS
AND MET~IODS OF STRIPPING RESISTS
Field of the Invention This invention relates to novel resist stripping compositions and to methods of stripping resists employing said stripping compositions. More particu-larly, this invention relates to a novel resist stripping composition comprising dimethylacetamide or dimethylformamide or a mixture thereof in combination with a tetrahydrothiophene 1,1-dioxide compound which can also include polyethylene glycol and/or a diethylene glycol monoalkyl ether and to stripping resists with said stripping compositions.
~ackground of the ~nvention Modern technology utilizes positive-type resist materials ror lithographically delineating patterns onto a substrate so that the patterns can be subse-quently etched or otherwise defined into the sub-strate material. The resist material is deposited as a film and the desired pattern is defined by exposing the resist film to eneryetic radiation. Thereafter the exposed regions are subject to a dissolution by a suitable developer liquid. After the pattern has been thus defined in the substrate the resist material must be completely removed from the substrate to avoid adversely affecting or hindering subsequent operations or processing steps.
It is necessary in such a photolithographic pro-cess that the photoresist material, following patterndelineation, be evenly and completely removed from all unexposed areas so as to permit further lithographic operations. Even the partial remains of a resist in an area to be further patterned is undesirable. Also, undesired resist residues between patterned lines can have deleterious eEfects on subsequent processes, such as metallization, or cause undesirable surface states and charges.
Heretofore the resist materials have been removed by stripping agents containing one or more of the following: halogenated hydrocarbons, for example, methylene chloride or tetrachloroethylene; amines and their derivatives such as di~ethylformamide, N-meth~rl-
2-pyrrolidone, diethanolamine and triethanolamine;
glycol ethers such as ethylene glycol monoethyl ether, 2-butoxyethanol, 2-(2-butoxyethoxy)ethanol, and the acetates thereof; ketones such as methyl ethyl ketone, acetone, methyl isobutyl ketone and cyclohexanone, as well as such materials as dioxane, sodium phenolate, isopropyl alcohol, sulfuric acid/nitric acid mixtures, persulfuric acid mixtures such as Caro's acid and sulfuric acid/ammonium persulfate, and mixtures of caustic and phenol derivatives as well as various other materials.
~ owever, there are various and numerous draw-backs and disadvantages with these various materials.
Among the one or more drawbacks and disadvantages found in the use oE each such stripping agents there may be mentioned the following: undesirable flamma-bility, volatility, odor and toxicity; incomplete removal of all resist film; effectiveness only on certain resist films, attack of components other than the resist material, such as attack of metal sub-strates by the stripping agent; safety in handling and disposal of the stripper; and the undesired necessity for use at specified elevated temperatures when selected resists are being stripped. Furthermore, the limited stripping capabilities of the stripping agents is a very decided drawback. Additionally, many such strippers are not sufficiently effective against re-sist materials that are subject to a severe post-bak-ing operation thereby limiting their usefulness. In some of the strippers the presence of water is ex-tremely detrimental. Additionally, for those strip-ping applications requiring inertness of the agent to metal substrates, toxicity during handling and diffi-culty of disposal are primary drawbacks.
Summary of the Invention It has no~ been found that a suitable photoresist stripping composition in which the hereinbefore men-tioned disadvantages and drawbacks are eliminated or substantially reduced and in which the range of use-fulness of the stripping composition is greatly extended can be obtained in accordance with the teach-inas of the present invention. The novel stripping compositions also exhibit a synergistically enhanced stripping action and provide resist stripping capabil-ities not possible fro~ the use of the individual B-120l '7~
components used alone as photoresist strippers. The novel stripping compositions of this invention com-prise a mixture of from about 30 to about 90 percent by weight of a dimethylacetamide or dimethylformamide or a mixture thereof and from about 10 to about 70 percent by weight of a tetrahydrothiophene-l,l-dioxide compound.
Even more effective stripping compositions are provided if there is added to the basic mixture either or both of the following materials: from about 3 to about 20 percent by weight of polyethylene glycol and/or from about 10 to about 30 percent by weiqht of a diethylene glycol monoalkyl ether. The presence of water in the stripping compositions of this invention is not detrimental and can be present in an amount from about 0 to about 10 percent by weight without undue adverse effects resulting.
The invention also relates to the use of such stripping compositions for removing photoresist material from a substrate surfaceO
DETAILED DESCRIPTION OF THE INVENTION
The stripping compositions of this invention com-prise stripping compositions containing from about 30 to about 90 weight percent, preferably from about 45 to about 90 weight percent, more preferably Erom about 60 to about 70 weight percent, and most preferably about 70 weight percent of a dimethylacetamide, dimethylformamide or a mixture thereoE, and from about l0 to about 70 weight percent, preferably from about l0 to about 5S weight percent, more preferably about 30 to about 40 weight percent, and most preferably t7~
about 30 weight percent of a tetrahydrothiophene-1,1-dioxide compound of the general formula t~L
S ~
0~ ~0 wherein R1 is hydrogen, methyl or ethyl.
As examples of tetrahydrothiophene-1,1-dioxide compounds of the hereinbefore set forth formula suit-able for use in the compositions of this invention there may be mentioned for examples tetrahydrothio-phene-1,1-dioxide, methyl tetrahydrothiophene-1,1-dioxide and ethyl tetrahydrothiophene-1,1-dioxide.
Especially preferred is tetrahydrothiophene-1,1-dioxide.
~n even more effective and desirable stripping composition is provided when from about 3 to about 20 weight percent, preferably about 5 to about 15 weight percent, and most preferably about 5 weight percent polyethylene glycol is added to the aforementioned stripping mixture. Another effective and desirable stripping composition i5 provided when from about 10 to about 30 weight percent, preferably from about 15 to about 20 weight percent and most preferably about 17 weight percent of a diethylene glycol monoalkyl ether, preferably 2-(2-ethoxyethoxy)ethanol, is added to the mixture of a dimethylacetamide or dimethyl-formamide and a tetrahydrothiophene~ dioxide com-pound. The diethylene glycol monoalkyl ethers that may be employed in the compositions of this invention B-~201 -o~
are those of the formula HOCH2CH2-O-CH2CH2-O-R where-in R is alkyl of 1 to 4 carbon atoms. Examples of such compounds for use in the compositions of this invention are for example, the monomethyl-, monoethyl-and monobutyl- ethers of diethylene glycol. Especial-ly preferred is 2-(2-ethoxyethoxy)ethanol.
A still more preferred stripping composition of this invention comprises a strippina composition wherein all four of the hereinbefore mentioned mater-ials are present in the composition in the weight percents previously stated.
A most preferred stripping composition of this invention comprises a mixture of from about 51% di-methylacetamide or dimethylformamide, about 26% tetra-hydrothiophene-1,1-dioxide, about 17~ 2-(2-ethoxy-ethoxy)ethanol and about 6~ polyethylene alycol.
While the compositions of this invention can be free of water this is not essential and water can be present in an amount of up to about 10 percent by weight.
As exemplary strippin~ compositions of this in-vention there can be mentioned the following composi-tions of Table I.
~4'7~
Table I
Component Percent by Weight ~omposition A B C D E F G H
Dimethylacetamide~7~ -- -T~
Dimethylformamide -- 70 -- 70 -- 51 -- 62 Tetrahydrothiophene-1,1-dioxide 30 30 -- -- 26 26 25 32
glycol ethers such as ethylene glycol monoethyl ether, 2-butoxyethanol, 2-(2-butoxyethoxy)ethanol, and the acetates thereof; ketones such as methyl ethyl ketone, acetone, methyl isobutyl ketone and cyclohexanone, as well as such materials as dioxane, sodium phenolate, isopropyl alcohol, sulfuric acid/nitric acid mixtures, persulfuric acid mixtures such as Caro's acid and sulfuric acid/ammonium persulfate, and mixtures of caustic and phenol derivatives as well as various other materials.
~ owever, there are various and numerous draw-backs and disadvantages with these various materials.
Among the one or more drawbacks and disadvantages found in the use oE each such stripping agents there may be mentioned the following: undesirable flamma-bility, volatility, odor and toxicity; incomplete removal of all resist film; effectiveness only on certain resist films, attack of components other than the resist material, such as attack of metal sub-strates by the stripping agent; safety in handling and disposal of the stripper; and the undesired necessity for use at specified elevated temperatures when selected resists are being stripped. Furthermore, the limited stripping capabilities of the stripping agents is a very decided drawback. Additionally, many such strippers are not sufficiently effective against re-sist materials that are subject to a severe post-bak-ing operation thereby limiting their usefulness. In some of the strippers the presence of water is ex-tremely detrimental. Additionally, for those strip-ping applications requiring inertness of the agent to metal substrates, toxicity during handling and diffi-culty of disposal are primary drawbacks.
Summary of the Invention It has no~ been found that a suitable photoresist stripping composition in which the hereinbefore men-tioned disadvantages and drawbacks are eliminated or substantially reduced and in which the range of use-fulness of the stripping composition is greatly extended can be obtained in accordance with the teach-inas of the present invention. The novel stripping compositions also exhibit a synergistically enhanced stripping action and provide resist stripping capabil-ities not possible fro~ the use of the individual B-120l '7~
components used alone as photoresist strippers. The novel stripping compositions of this invention com-prise a mixture of from about 30 to about 90 percent by weight of a dimethylacetamide or dimethylformamide or a mixture thereof and from about 10 to about 70 percent by weight of a tetrahydrothiophene-l,l-dioxide compound.
Even more effective stripping compositions are provided if there is added to the basic mixture either or both of the following materials: from about 3 to about 20 percent by weight of polyethylene glycol and/or from about 10 to about 30 percent by weiqht of a diethylene glycol monoalkyl ether. The presence of water in the stripping compositions of this invention is not detrimental and can be present in an amount from about 0 to about 10 percent by weight without undue adverse effects resulting.
The invention also relates to the use of such stripping compositions for removing photoresist material from a substrate surfaceO
DETAILED DESCRIPTION OF THE INVENTION
The stripping compositions of this invention com-prise stripping compositions containing from about 30 to about 90 weight percent, preferably from about 45 to about 90 weight percent, more preferably Erom about 60 to about 70 weight percent, and most preferably about 70 weight percent of a dimethylacetamide, dimethylformamide or a mixture thereoE, and from about l0 to about 70 weight percent, preferably from about l0 to about 5S weight percent, more preferably about 30 to about 40 weight percent, and most preferably t7~
about 30 weight percent of a tetrahydrothiophene-1,1-dioxide compound of the general formula t~L
S ~
0~ ~0 wherein R1 is hydrogen, methyl or ethyl.
As examples of tetrahydrothiophene-1,1-dioxide compounds of the hereinbefore set forth formula suit-able for use in the compositions of this invention there may be mentioned for examples tetrahydrothio-phene-1,1-dioxide, methyl tetrahydrothiophene-1,1-dioxide and ethyl tetrahydrothiophene-1,1-dioxide.
Especially preferred is tetrahydrothiophene-1,1-dioxide.
~n even more effective and desirable stripping composition is provided when from about 3 to about 20 weight percent, preferably about 5 to about 15 weight percent, and most preferably about 5 weight percent polyethylene glycol is added to the aforementioned stripping mixture. Another effective and desirable stripping composition i5 provided when from about 10 to about 30 weight percent, preferably from about 15 to about 20 weight percent and most preferably about 17 weight percent of a diethylene glycol monoalkyl ether, preferably 2-(2-ethoxyethoxy)ethanol, is added to the mixture of a dimethylacetamide or dimethyl-formamide and a tetrahydrothiophene~ dioxide com-pound. The diethylene glycol monoalkyl ethers that may be employed in the compositions of this invention B-~201 -o~
are those of the formula HOCH2CH2-O-CH2CH2-O-R where-in R is alkyl of 1 to 4 carbon atoms. Examples of such compounds for use in the compositions of this invention are for example, the monomethyl-, monoethyl-and monobutyl- ethers of diethylene glycol. Especial-ly preferred is 2-(2-ethoxyethoxy)ethanol.
A still more preferred stripping composition of this invention comprises a strippina composition wherein all four of the hereinbefore mentioned mater-ials are present in the composition in the weight percents previously stated.
A most preferred stripping composition of this invention comprises a mixture of from about 51% di-methylacetamide or dimethylformamide, about 26% tetra-hydrothiophene-1,1-dioxide, about 17~ 2-(2-ethoxy-ethoxy)ethanol and about 6~ polyethylene alycol.
While the compositions of this invention can be free of water this is not essential and water can be present in an amount of up to about 10 percent by weight.
As exemplary strippin~ compositions of this in-vention there can be mentioned the following composi-tions of Table I.
~4'7~
Table I
Component Percent by Weight ~omposition A B C D E F G H
Dimethylacetamide~7~ -- -T~
Dimethylformamide -- 70 -- 70 -- 51 -- 62 Tetrahydrothiophene-1,1-dioxide 30 30 -- -- 26 26 25 32
3-methyl tetrahydro-thiophene-1,1-dioxide -- -- 30 30 --2-(2-ethoxyethoxy) ethanol -- -- -- -- 17 17 15 --Polyethylene glycol -~ - 6 6 -- 6 In the compositions oE this in~ention any suit-able polyethylene glycol may be employed al though polethyle~e glycol of a lecular wei~ht of about 200 is preferred.
The stripping compositions of this invention are effective in stripping a wide and varied range of positive photoresists. Most positive photoresists consist of an ortho napthoquinone diazide sulfonic acid ester or amide sensitizer or photoactive compo-nent, with novolak, resole, polyacrylamide or acryli~
copolymer type binders or resins. Such positive photoresists are well known in the art. Such resists and sensitizers are described, for examplP, in United States Patent Nos. 3,046,118; 3,046,121; 3,106,465;
3,201,239; 3,538,137; 3,666,473; 3,93~,057;
3,984,582 and 4,007,047. As examples of such positive photoresist compositions for which the stripping com-position of this invention may be used there may be mentioned Eastman Kodak Company photoresist Rodak 809;
J. ~ Baker Chemical Company photoresist PR-20;
* Trade Mark '7~
Philip A. Hunt Chemical Corp. Waycoat HPR 104, HPR
106, ~P~ 204 and HPR 206 photoresists; Shipley Company * * * *
Inc. photoresist A7-1350, AZ-1350B, AZ-1350H, AZ-* * * * *
1350J, AZ-1370, AZ-1450B, AZ-1450J, AZ-1470, AZ-2400 and AZ-111; Polychrome Corporation photoresists PC-129, PC-129SF and PC-138; Fuju Chemicals Industrial Co. photoresist FPR-200; and Tokyo Ohka Kogyo Co. Ltd.
photoresist OFPR-800.
The stripping compositions of this invention are effective in ~ompletely removing photoresi~t materials from substrates even when they have been subjected to a post-bake treatment at about 150~C Eor a p~riod of about one hour.
The stripping compositions of this invention are especially advantageous for numerous reasons among which may be mentioned the following. The stripping compositions remove positive photoresist materials from metal and other substrates without attacking the substrate. The compositions are essentially non-toxic and are water miscible. The presence of water during the stripping operation is not deleterious to the operation of the stripping composition. Unlike phenolic based strippers the compositions of this invention require no special handling and are easily disposed of in normal sewage treatment facilities.
Moreover the bath life and stripping effectiveness of the compositions are for the most part independent of temperature. ~se of the stripping compositions of this invention requires only a subsequent rinse with deionized water whereas many prior strippers require the use of additional organic solvents. The stfipping * Trade Mark 1~9~
compositions of this invention completely remove dif ficult-to-remove positive photoresists at about 75C or less whereas some prior art strippers require bath temperatures of about 95 to 100 C. Also, most posi-tive photoresists are completely stripped in about one minute or less while stripping ti~es of 5 to 20 min-utes are recommended for many commercial stripping compositions.
It has been unexpectedly found that the stripping compositions of this invention effectively and com-pletely remove positive photoresist material from sub-strates which photoresist materials are not effectively and completely removed by the individual components of the compositions of this invention.
The effectiveness and unexpected nature of the stripping action of stripping composition of this inven-tion is illustrated by the data presented in the follow-ing Table II.
Wafer substrates were coated with positive photo-resist materials according to art recognized procedures and post-baked at about 150C for a period of about 45 minutes to one hour. Stripping baths were maintained at constant temperature with water baths and the post-baked coated wafers were immersed into 600 ml beakers contain-ing the constant temperature stripping compositions with intermittent agitation for the specified times after which the wafer is removed, rinsed in running deionized water and spin dried a~ 3000 rpm. Strippability was judged by inspection of the wafers to ascertain if any residue was present.
_g_ B - 1 2 0l
The stripping compositions of this invention are effective in stripping a wide and varied range of positive photoresists. Most positive photoresists consist of an ortho napthoquinone diazide sulfonic acid ester or amide sensitizer or photoactive compo-nent, with novolak, resole, polyacrylamide or acryli~
copolymer type binders or resins. Such positive photoresists are well known in the art. Such resists and sensitizers are described, for examplP, in United States Patent Nos. 3,046,118; 3,046,121; 3,106,465;
3,201,239; 3,538,137; 3,666,473; 3,93~,057;
3,984,582 and 4,007,047. As examples of such positive photoresist compositions for which the stripping com-position of this invention may be used there may be mentioned Eastman Kodak Company photoresist Rodak 809;
J. ~ Baker Chemical Company photoresist PR-20;
* Trade Mark '7~
Philip A. Hunt Chemical Corp. Waycoat HPR 104, HPR
106, ~P~ 204 and HPR 206 photoresists; Shipley Company * * * *
Inc. photoresist A7-1350, AZ-1350B, AZ-1350H, AZ-* * * * *
1350J, AZ-1370, AZ-1450B, AZ-1450J, AZ-1470, AZ-2400 and AZ-111; Polychrome Corporation photoresists PC-129, PC-129SF and PC-138; Fuju Chemicals Industrial Co. photoresist FPR-200; and Tokyo Ohka Kogyo Co. Ltd.
photoresist OFPR-800.
The stripping compositions of this invention are effective in ~ompletely removing photoresi~t materials from substrates even when they have been subjected to a post-bake treatment at about 150~C Eor a p~riod of about one hour.
The stripping compositions of this invention are especially advantageous for numerous reasons among which may be mentioned the following. The stripping compositions remove positive photoresist materials from metal and other substrates without attacking the substrate. The compositions are essentially non-toxic and are water miscible. The presence of water during the stripping operation is not deleterious to the operation of the stripping composition. Unlike phenolic based strippers the compositions of this invention require no special handling and are easily disposed of in normal sewage treatment facilities.
Moreover the bath life and stripping effectiveness of the compositions are for the most part independent of temperature. ~se of the stripping compositions of this invention requires only a subsequent rinse with deionized water whereas many prior strippers require the use of additional organic solvents. The stfipping * Trade Mark 1~9~
compositions of this invention completely remove dif ficult-to-remove positive photoresists at about 75C or less whereas some prior art strippers require bath temperatures of about 95 to 100 C. Also, most posi-tive photoresists are completely stripped in about one minute or less while stripping ti~es of 5 to 20 min-utes are recommended for many commercial stripping compositions.
It has been unexpectedly found that the stripping compositions of this invention effectively and com-pletely remove positive photoresist material from sub-strates which photoresist materials are not effectively and completely removed by the individual components of the compositions of this invention.
The effectiveness and unexpected nature of the stripping action of stripping composition of this inven-tion is illustrated by the data presented in the follow-ing Table II.
Wafer substrates were coated with positive photo-resist materials according to art recognized procedures and post-baked at about 150C for a period of about 45 minutes to one hour. Stripping baths were maintained at constant temperature with water baths and the post-baked coated wafers were immersed into 600 ml beakers contain-ing the constant temperature stripping compositions with intermittent agitation for the specified times after which the wafer is removed, rinsed in running deionized water and spin dried a~ 3000 rpm. Strippability was judged by inspection of the wafers to ascertain if any residue was present.
_g_ B - 1 2 0l
4'~
Compositions of this invention, denoted as composi-tions A through C, which correspond in composition to those so designated in Table I, are compared to results obtained for the individual components alone for three generally difficult to remove photoresists, namely Shipley's AZ-1350J photoresist, Tokyo Ohka Kogyo Co.
Ltd.'s OFPR-800 photoresist and Philip A. Hunt Chemical-Corp. HPR 204 photoresist.
Table II
Temperature C, Time and % Removal StrippingHPR-204 AZ-1350J OFPR-800 CompositionPhotoresistPhotoresistPhotoresist dimethyl-25,5 1/4 min.,75,2 min.,75,4 min., acetamide100~ 100~ loo%
15 dimethyl- 75,4 1/2-575,13 min., formamide min.,100% 100%
tetrahydrothio- 25,7 min.,75,8 min., 75,6 min~, phene-1,1-dioxide ~ 50% ~ 50% ~ 20%
3-methyl tetra-hydrothiophene 25,8 min., ----- 75,8 min., 1,1-dioxide 75% ~ 50%
A 25,90 sec., ----- -----100%
B _____75,~30 sec., 75,~1 min., 100% 100%
C 25%,1 min.,75%,1 1~2 min., 75~,2 1~2 min., 1 00~ 1 00% 1 00%
The above examples are qiven merely by way o illustration and are not ~o be considered to limit the invention.
It is anticipated that the stripping compositions of this invention can be used as stripping agents for positive photoresists by contacting the unexposed photoresist on a substrate with the stripping composi-tion in a variety of means, such as by immersion in astripping bath or by spraying the stripping composi-tion over the surface of the unexposed photoresist.
~-1201 '7li~
While the use of the above compositions for stripping photoresist materials Erom substrates has alone been illustrated it will be appreciated that the stripping composi.tions bf the invention are suitable for other uses which will be apparent to those skilled in the art, such as, for example, in the stripping of polymer residues from reaction or curing vessels and the like, or for stripping coatings, such as for example, paints and varnishes and the like, from 10 . surfaces.
Compositions of this invention, denoted as composi-tions A through C, which correspond in composition to those so designated in Table I, are compared to results obtained for the individual components alone for three generally difficult to remove photoresists, namely Shipley's AZ-1350J photoresist, Tokyo Ohka Kogyo Co.
Ltd.'s OFPR-800 photoresist and Philip A. Hunt Chemical-Corp. HPR 204 photoresist.
Table II
Temperature C, Time and % Removal StrippingHPR-204 AZ-1350J OFPR-800 CompositionPhotoresistPhotoresistPhotoresist dimethyl-25,5 1/4 min.,75,2 min.,75,4 min., acetamide100~ 100~ loo%
15 dimethyl- 75,4 1/2-575,13 min., formamide min.,100% 100%
tetrahydrothio- 25,7 min.,75,8 min., 75,6 min~, phene-1,1-dioxide ~ 50% ~ 50% ~ 20%
3-methyl tetra-hydrothiophene 25,8 min., ----- 75,8 min., 1,1-dioxide 75% ~ 50%
A 25,90 sec., ----- -----100%
B _____75,~30 sec., 75,~1 min., 100% 100%
C 25%,1 min.,75%,1 1~2 min., 75~,2 1~2 min., 1 00~ 1 00% 1 00%
The above examples are qiven merely by way o illustration and are not ~o be considered to limit the invention.
It is anticipated that the stripping compositions of this invention can be used as stripping agents for positive photoresists by contacting the unexposed photoresist on a substrate with the stripping composi-tion in a variety of means, such as by immersion in astripping bath or by spraying the stripping composi-tion over the surface of the unexposed photoresist.
~-1201 '7li~
While the use of the above compositions for stripping photoresist materials Erom substrates has alone been illustrated it will be appreciated that the stripping composi.tions bf the invention are suitable for other uses which will be apparent to those skilled in the art, such as, for example, in the stripping of polymer residues from reaction or curing vessels and the like, or for stripping coatings, such as for example, paints and varnishes and the like, from 10 . surfaces.
Claims (28)
1. A stripping composition comprising from about 30 to about 90 weight percent of a compound selected from the group consisting of dimethylacetamide, di-methylformamide and mixtures thereof, and from about 10 to about 70 weight percent of a tetrahydrothio-phene-1,1-dioxide compound of the formula wherein R1 is selected from the group consisting of hydrogen, methyl or ethyl.
2. A composition of claim 1 comprising from about 45 to about 90 weight percent of a compound selected from the group consisting of dimethylaceta-mide, dimethylformamide, and mixtures thereof and from about 10 to about 55 weight percent tetrahydrothio-phene-1,1-dioxide.
3. A composition of claim 2 comprising about 70%
dimethylacetamide and 30% tetrahydrothiophene-1,1-dioxide.
dimethylacetamide and 30% tetrahydrothiophene-1,1-dioxide.
4. A composition of claim 2 comprising about 70%
dimethylformamide and 30% tetrahydrothiophene-1,1-dioxide.
dimethylformamide and 30% tetrahydrothiophene-1,1-dioxide.
5. A composition of claim 1 having from about 10 to about 30 weight percent of a diethylene glycol monoalkyl ether of the formula wherein R is alkyl of 1 to 4 carbon atoms.
6. A composition of claim 5 having from about 2 to about 30 weight percent 2-(2-ethoxyethoxy) ethanol also present in the composition.
7. A composition of claim 1 having from about 3 to about 20 weight percent polyethylene glycol also present in the composition.
8. A composition of claim 6 having from about 3 to about 20 weight percent polyethylene glycol also present in the composition.
9. A composition of claim 8 comprising about 51% dimethylacetamide, about 26% tetrahydrothiophene-1,1-dioxide, about 17% 2-(2-ethoxyethoxy) ethanol, and about 6% polyethylene glycol.
10. A composition of claim 8 comprising about 50% dimethylformamide, about 26% tetrahydrothiophene-1,1-dioxide, about 17% 2-(2-ethoxyethoxy) ethanol and about 6% polyethylene glycol.
11. The composition of claim 7 wherein the polyethylene glycol is polyethylene glycol of molecu-lar weight of about 200.
12. The composition of claim 9 wherein the polyethylene glycol is polyethylene glycol of molecu-lar weight of about 200.
13. The composition of claim 10 wherein the polyethylene glycol is polyethylene glycol of molecular weight of about 200.
14. The composition of claim 11 wherein the polyethylene glycol is polyethylene gylcol of molecu-lar weight of about 200.
15. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 1.
16. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 2.
17. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 3.
18. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 4.
19. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 5.
20. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 6.
21. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 7.
22. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 8.
23. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 9.
24. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 10.
25. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 11.
26. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 12.
27. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 13.
28. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition, the improve-ment comprising utilizing as the stripping composition the composition of claim 14.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/413,995 US4403029A (en) | 1982-09-02 | 1982-09-02 | Stripping compositions and methods of stripping resists |
| US413,995 | 1989-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1194764A true CA1194764A (en) | 1985-10-08 |
Family
ID=23639517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000432806A Expired CA1194764A (en) | 1982-09-02 | 1983-07-20 | Stripping compositions and methods of stripping resists |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4403029A (en) |
| EP (1) | EP0102628B1 (en) |
| JP (1) | JPS5949538A (en) |
| AT (1) | ATE25295T1 (en) |
| AU (1) | AU555161B2 (en) |
| CA (1) | CA1194764A (en) |
| DE (1) | DE3369576D1 (en) |
| HK (1) | HK33988A (en) |
| IE (1) | IE54405B1 (en) |
| IL (1) | IL69400A0 (en) |
| SG (1) | SG17088G (en) |
| ZA (1) | ZA835588B (en) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58223149A (en) * | 1982-06-22 | 1983-12-24 | Toray Ind Inc | Developing solution of photosensitive polyimide |
| US4491530A (en) * | 1983-05-20 | 1985-01-01 | Allied Corporation | Brown stain suppressing phenol free and chlorinated hydrocarbons free photoresist stripper |
| US4828960A (en) * | 1985-01-07 | 1989-05-09 | Honeywell Inc. | Reflection limiting photoresist composition with two azo dyes |
| US4617251A (en) * | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
| US4806458A (en) * | 1985-10-28 | 1989-02-21 | Hoechst Celanese Corporation | Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate |
| US4983490A (en) * | 1985-10-28 | 1991-01-08 | Hoechst Celanese Corporation | Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate |
| US4692398A (en) * | 1985-10-28 | 1987-09-08 | American Hoechst Corporation | Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate |
| IE59971B1 (en) * | 1986-11-10 | 1994-05-04 | Baker J T Inc | Stripping compositions and their use for stripping resists from substrates |
| US4770713A (en) * | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
| US4824763A (en) * | 1987-07-30 | 1989-04-25 | Ekc Technology, Inc. | Triamine positive photoresist stripping composition and prebaking process |
| US5166039A (en) * | 1988-02-25 | 1992-11-24 | Hoya Corporation | Peeling solution for photo- or electron beam-sensitive resin and process for peeling off said resin |
| JPH02981A (en) * | 1988-02-25 | 1990-01-05 | Hoya Corp | Stripping liquid for photosensitive resin and method of stripping photosensitive resin by using this liquid |
| US7205265B2 (en) | 1990-11-05 | 2007-04-17 | Ekc Technology, Inc. | Cleaning compositions and methods of use thereof |
| US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
| US20040018949A1 (en) * | 1990-11-05 | 2004-01-29 | Wai Mun Lee | Semiconductor process residue removal composition and process |
| FR2691713B1 (en) * | 1992-06-02 | 1997-12-26 | Atochem Elf Sa | COMPOSITION FOR STRIPPING PAINTS. |
| US6001192A (en) * | 1992-06-02 | 1999-12-14 | Elf Atochem S.A. | Paint stripping composition |
| US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
| US7144849B2 (en) * | 1993-06-21 | 2006-12-05 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
| US5417802A (en) * | 1994-03-18 | 1995-05-23 | At&T Corp. | Integrated circuit manufacturing |
| US5591702A (en) * | 1995-05-25 | 1997-01-07 | Henkel Corporation | Stripping compositions with mixtures or organic solvents and uses thereof |
| US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
| US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
| US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| KR100271761B1 (en) * | 1997-11-21 | 2000-12-01 | 윤종용 | Manufacturing method of semiconductor device |
| US7579308B2 (en) * | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| US6368421B1 (en) | 1998-07-10 | 2002-04-09 | Clariant Finance (Bvi) Limited | Composition for stripping photoresist and organic materials from substrate surfaces |
| US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| WO2002004233A1 (en) | 2000-07-10 | 2002-01-17 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US7456140B2 (en) * | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| CA2331439C (en) * | 2001-01-19 | 2007-01-02 | E.Q.U.I.P. International Inc. | Paint stripping composition and method of using the same |
| US7543592B2 (en) * | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| JP2005514661A (en) * | 2002-01-11 | 2005-05-19 | クラリアント インターナショナル リミテッド | Cleaning composition for positive or negative photoresist |
| US20030171239A1 (en) * | 2002-01-28 | 2003-09-11 | Patel Bakul P. | Methods and compositions for chemically treating a substrate using foam technology |
| AU2003225178A1 (en) * | 2002-04-24 | 2003-11-10 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
| US20050089489A1 (en) * | 2003-10-22 | 2005-04-28 | Carter Melvin K. | Composition for exfoliation agent effective in removing resist residues |
| US20110146724A1 (en) * | 2009-12-19 | 2011-06-23 | Mr. WAI MUN LEE | Photoresist stripping solutions |
| KR20220058069A (en) | 2020-10-30 | 2022-05-09 | 주식회사 이엔에프테크놀로지 | Composition for cleaning residue after etching or ashing from semiconductor substrate and cleaning method using same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2891849A (en) * | 1956-11-30 | 1959-06-23 | Eastman Kodak Co | Solvent composition |
| US4165295A (en) * | 1976-10-04 | 1979-08-21 | Allied Chemical Corporation | Organic stripping compositions and method for using same |
| US4304681A (en) * | 1980-09-15 | 1981-12-08 | Shipley Company, Inc. | Novel stripping composition for positive photoresists and method of using same |
| US4395479A (en) * | 1981-09-23 | 1983-07-26 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
-
1982
- 1982-09-02 US US06/413,995 patent/US4403029A/en not_active Expired - Lifetime
-
1983
- 1983-07-20 IE IE1699/83A patent/IE54405B1/en not_active IP Right Cessation
- 1983-07-20 CA CA000432806A patent/CA1194764A/en not_active Expired
- 1983-07-29 AU AU17441/83A patent/AU555161B2/en not_active Ceased
- 1983-07-29 ZA ZA835588A patent/ZA835588B/en unknown
- 1983-08-02 IL IL69400A patent/IL69400A0/en unknown
- 1983-08-10 JP JP58145127A patent/JPS5949538A/en active Granted
- 1983-09-02 EP EP83108673A patent/EP0102628B1/en not_active Expired
- 1983-09-02 AT AT83108673T patent/ATE25295T1/en not_active IP Right Cessation
- 1983-09-02 DE DE8383108673T patent/DE3369576D1/en not_active Expired
-
1988
- 1988-03-08 SG SG170/88A patent/SG17088G/en unknown
- 1988-05-02 HK HK339/88A patent/HK33988A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US4403029A (en) | 1983-09-06 |
| IE54405B1 (en) | 1989-09-27 |
| EP0102628A1 (en) | 1984-03-14 |
| JPS5949538A (en) | 1984-03-22 |
| AU555161B2 (en) | 1986-09-11 |
| EP0102628B1 (en) | 1987-01-28 |
| SG17088G (en) | 1988-09-30 |
| AU1744183A (en) | 1984-03-08 |
| IL69400A0 (en) | 1983-11-30 |
| HK33988A (en) | 1988-05-13 |
| DE3369576D1 (en) | 1987-03-05 |
| IE831699L (en) | 1984-03-02 |
| ATE25295T1 (en) | 1987-02-15 |
| JPH0143947B2 (en) | 1989-09-25 |
| ZA835588B (en) | 1984-04-25 |
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