CA1173549A - Semiconductor laser having at least two radiation beams, and method of manufacturing same - Google Patents
Semiconductor laser having at least two radiation beams, and method of manufacturing sameInfo
- Publication number
- CA1173549A CA1173549A CA000398701A CA398701A CA1173549A CA 1173549 A CA1173549 A CA 1173549A CA 000398701 A CA000398701 A CA 000398701A CA 398701 A CA398701 A CA 398701A CA 1173549 A CA1173549 A CA 1173549A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- region
- active layer
- junction
- passive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
Abstract
ABSTRACT:
Semiconductor laser device having a semiconduc-tor body in which two or more lasers are provided which can generate substantially parallel radiation beams of preferably different frequencies which are situated close together. According to the invention the semiconductor body comprises at least one semiconductor laser of the double heterojunction type (DH-type) comprising a plur-ality of semiconductor layers with a radiating p-n junc-tion parallel to the semiconductor layers and at least one semiconductor laser of the TJS ("Transverse Junction Stripe") type the p-n junction surface of which is trans-verse to that of the DH-laser. The device comprises a layer structure having at least two active layers each between two passive layers. One laser is formed in a mesa-shaped part (II) of the body which comprises both active layers, the other one in an adjacent part (I) in which the uppermost active layer is absent. The TJS-laser is preferably provided in the last-mentioned part (I). More than two lasers may also be provided. Appli-cation in optical telecommunication and in "direct read and write" (DRAW") systems.
Semiconductor laser device having a semiconduc-tor body in which two or more lasers are provided which can generate substantially parallel radiation beams of preferably different frequencies which are situated close together. According to the invention the semiconductor body comprises at least one semiconductor laser of the double heterojunction type (DH-type) comprising a plur-ality of semiconductor layers with a radiating p-n junc-tion parallel to the semiconductor layers and at least one semiconductor laser of the TJS ("Transverse Junction Stripe") type the p-n junction surface of which is trans-verse to that of the DH-laser. The device comprises a layer structure having at least two active layers each between two passive layers. One laser is formed in a mesa-shaped part (II) of the body which comprises both active layers, the other one in an adjacent part (I) in which the uppermost active layer is absent. The TJS-laser is preferably provided in the last-mentioned part (I). More than two lasers may also be provided. Appli-cation in optical telecommunication and in "direct read and write" (DRAW") systems.
Description
~ , 1173545~
PHN 99~1 l 15-1-1982 "Semiconductor laser having at least two radiation beams, and method of manufacturing sHme."
. ~ .
The invention relates to a semiconductor laser device for generating radiation beams which are substan-tially parallel to each other, comprising a semiconductor wafer having a first and a second major surface and com-prising, between said major surfaces and beside eachother, at least a first part and an adjoining second part, which semiconductor wafer is further bounded by two substantially parallel reflective side faces extending perpendicularly to the direction of said radiation beams lO and comprises a substrate of a first conductivity type adjoining the second major surface, on which substrate are provided successively a first passive layer of the first conductivity type, a first active layer and a second passive layer which layers, together with the l5 substrate, extend in both parts o~ the semiconductor wafer, and only in the second part there are provided on the second passive layer successively a second active layer and a third passive layer, each active layer being provided between passive layers having a larger forbidden 2D band gap, the first active layer comprising a pn-junction in said first part and the second active layer comprising a pn-junction in said second part, each of which pn-junctions emits, at sufficiently high forward current one of said radiation beams, the substrate being connected 25 to a first electrode, the second passive layer being connected to a second electrode, and the third passive layer being connected to a third electrode.
The invention furthermore relates to a method of manufacturing the device.
It is to be noted that when an active layer is said to comprise a p-n junction, this pn-junction may be present either inside the active layer or at the interface between the active layer and an adjoining passive layer.
117~549 Furthermore, substantially parallel radiation beams are to be understood to mean radiation beams the centre lines of which extend substantially parallel but which in them-selves may be more or less diverging.
A semiconductor laser device as described above is known from Applied Physics Letters, vol. 35, No. 8, October 15, 1971, pp. 588-589.
For various applications it is of importance to have two mutually substantially parallel laser beams 10 at a small distance from each other.
A first known application is found in devices for optical communication where light signals of a laser source are coupled into an optical fibre for transmitting information which is read out at the other end of the 15 optical fibre by méans of a radiation detector. The quan-tity of information (for example the number of telephone calls) which can be transpo~ted simultaneously through the same~:optical fibre can be doubled by using a radi-ation source which transmits two or more different fre-20 quencies; this is known as wavelength multiplexing. Forthat purpose, for example, t~e light of each of two lasers of different wavelengths may be coupled into a separate optical fibre and the light of the two fibres may then be combined in one single optical fibre by 25 means of a mixing device. However, this mixing process gives considerable losses. If it were possible to couple the light of the two lasers directly in one single op-tical fibre, these losses could be avoided. EIowever, this can be done only when the radiation sources are 30 situated very close together.
Another applica-tion may be found in providing information on disks by optical methods ("digital optical recording" or DOR), in which method holes are burned in a reflecting layer by means of a laser beam. In order to 35 check the correctness of the information thus written?
it is read out by means of a second laser which is mounted behind the first laser. The two radiation beams may have the same frequencies, although for reasons of circuitry ~173549 for a good separating of the signal it is desirable that the beams have different frequencies. This may be done by means of a second laser mounted in a separate optical mounting (or "light pencil") which solution, however, involves an expensive construction. The radiation beam of one single laser can also be split by means of an optical system into a "write" beam and a "read" beam. However, this is not economic since a large energy is already required for "writing" and bv splitting the radiation beam the power of -the laser must be increased even more, which involves problems with respect to cooling and cost-price. Finally, two separate lasers mounted on one single cooling plate may also be used. For this purpose, however, the lasers should be aligned very precisely relative to 15 each other, while even then the minimum distance between the emissive facets is at least equal to the width of each of the semiconductor wafers.
The semiconductor laser device described in the said article in Applied Physics Letters, 35 (8), October 20 15~ 1979, pp. 588-589 comprises in the same semiconductor body two lasers beside each other of the so-called double hetero junction type (DH lasers) with mutually parallel extending radiating ~-n junctions. However, for use in the above-mentioned applications this device has various 25 disadvantages.
First of all, the series resistance of at least one of the integrated lasers is high since the current through said laser must flow through one of the passive layers over a comparatively large distance.
Furthermore~ as is also noted in the said article, the emissive facets are so far apart that it is difficult to couple the two laser beams directly in one optical fibre. This disadvantage applies to an even greater extent when said optical fibre is a so-called 35 "monomode" fibre such as is often desired particularly in optical communication, since said fibres have very small diameters.
One of the objects of the invention is to 11735~9 PEIN 9981 ~ 15-1-1982 remove or at least considerably reduce the drawbacks associated with the known semicorlductor laser device.
The invention is based inter alia on the re-cognition that the end in view can be reached by inte-gration of two lasers of different structure, the p-n junction surfaces of which are not parallel, all this in such manner that the technology used for the manufacture of the conventional double hetero junction laser with a ~-n junction parallel to the direction of the layer can be used for the construction of the required layer structure of the device.
For that purpose, a semiconductor laser device of the kind described in -the opening paragraph according to the invention is characterized in that -the third 15 passive layer is of the second conductivity type and that in one of said parts of the semiconductor wafer a region is formed locally which extends from the first major surface through the uppermost passive layer, the adjoining active layer and a part of the underlying passive layer, 20 the three layers all having -the same conductivity type which is opposite to that of said region, said region forming with the remaining part of the adjoining active layer the first p-n junction extending -transversely to said active layer and to said side surfaces, the second 25 psrl junction extending parallel to the second ma~or sur-face and comprising a strip-shaped active region also ex-tending transversely to the side surfaces.
The semiconductor laser device according to the invention comprises two lasers of essen-tially dif-30 ferent construction in the same semiconductor wafer, namely a "conventional" double hetero-junction (DH) laser, and a so-called TJS ("Transverse Junction Stripe") laser.
This latter laser is known per se from United States Patent Specification No. 3,961,996.
An important advantage of the device in ac-cordance with the invention is that the radiating facets of both lasers can be provided very close together. As a result of this the radiation beams originating from PHN 99~1 5 15-1-1982 both lasers can be coupled directly in one single optical fibre without an intermediate op-tical mi.Ying device. Such a small distance between the emissive facets is techno-logically realisable in that the surface of the radiating p-n junction of the TJS laser is perpendicular to the active layer and can as a resul-t be provided very close to the ~H laser in a manner so as not to be hindered by insulation regions serving for the lateral confinement of the active region.
The device according to the invention is also very suitable for -the already mentioned use of pro-viding information on disks by optical methods (DOR), in which a "write" laser of a comparatively large power is necessary to write the information while for reading 15 for control purposes a "read" laser of a much smaller power is sufficient, the so-called DRAI~ (Direct Read And Write)-system. As a result of the very narrow active ~-n junction the width of which is equal to the thickness of the active layer, the TJS laser requires a small power 20 as compared with the adjacent DH-laser which small power, however, is sufficient for the reading function, while its low dissipation simplified the cooling problem.
Furthermore, the radiation beam of a TJS-laser shows substantially no astigmatism so that no exter-25 nal correction lens is necessary for said laser, which simplifies the construction. Since the current for -the TJS-laser passes substantially only through the active layer, the efficiency of said laser moreover is very favourable.
As regards the manufacture of the device in accordance with the invention it is a very important ad-vantage that it may be started from a layer structure as is usually used for the manufacture of a double hetero junction laser, with the only difference that two e~$ra 35 layers are grown. After completion of the layer structure the DH-laser can be finished in the usual manner, while for realising the TJS-laser only an etching step and a diffusion step are necessary, at least in the case when P~IN 9981 6 15-1-1982 tlle said region is formed by diffusion. ~s a matter of fact, said region can also be formed differently, for example, by ion implantation, or by contour epitaxy, or by a combination of one of these techniclues with a diffusion step.
According to a first important preferred em-bodinlent the first active layer and the second passive layer are of the first conductivity type, while the said region is of the second aonductivity type and ex-tends locally in the first part of the semiconductor waferthrough the second passive layer, the first active layer and a part of -the first passive layer. Starting from a substrate (usually N-type) which is usual for making conventional double hetero junction lasers and on which two extra layers are grown (the first active layer and the second passive layer), a layer structure may be grown which is generally used for said laser, after which in the first part of the plate the uppermost layers are etched away down to the second passive layer and by local 20 use of, for example, a double zinc diffusion the region of the second conductivity type is formed to obtain the TJS-laser.
Slightly less favourable but in certain circum-stances of advantage is a second preferred embodiment 25 in which the second passive layer and the second active layer are both of the second conduc-tivity type, while the said region is of the first conductivity type and extends locally in the second part of the semiconductor wafer through the third passive layer, the second active 30 layer and a part of the second passive layer. In contrast with the preceding embodiment, the TJS-laser in this embodiment is present in the mesa-shaped projectiIlg part of the semiconductor plate. A practical disadvantage of this embodiment is that in practice gallium arsenide 35 and mixed crystals thereof with other III-V elements are often used as semiconductor materials, while for the formation of diffused regions therein zinc is used as the best suitable activator. Since zinc in these materials is P~N 9981 7 15-1-1982 an acceptor, the substrate will have to be ~-type con-ductive when using these materials in forming the said region by diffusion. Due to the smaller mobility of holes with respect to electrons the substrate will thereby easily form too high a series resistance. When, however, the said region is not manufactured by diffusion ~ut by means of another method, for example, contour epitaxy or ion implantation, the said region may be made n-type conductive. The substrate may then also be n-type con-ductive so that the said disadvantage of high seriesresistance in this embodiment is avoided.
According to a further preferred embodiment the semiconductor laser device is characterized in that the strip-shaped active region of the second ~-n junction is 15 bounded by proton-bombarded, electrically substantially insulating æones extending at least into the proximity of the associated active layer.
The invention furthermore relates to a method of manufacturing the semiconductor la~er device, which 20 method is characterized in that at least a first passive layer of the first conductivity type, a first active layer of the first conductivity type, a second passive layer of the first conductivity type~ a second active layer, and a third passive layer of the second conductivity type are 25 provided successively on a substrate of a first conduc-tivity type by epitaxial growth, that the third passive layer, the second active layer and at most a part of the second passive layer are then removed over a part of the surface of the resulting layer structure, after which at 30 least said surface part is coated with a masking layer which has a diffusion window and a dopant determining the second conductivity type is then indiffused v a said window in two steps, in which in a first diffusion step a non-degenerate doped region is formed which extends 35 through the second passive layer and the first active layer over part of the thickness of the first passive layer and in a second, less deep diffusion step a part of said region extending through the first active layer is converted into degenerate doped material.
The invention will now be described in greater detail with reference to a few examples and the drawing, in which Fig. 1 shows partly in cross-section and partly in perspective a semiconductor laser device according to the invention, Figs. 2 to 8 are diagrammatic cross-sectional views of the device shown in Fig. 1 in successive stages 10 of manufacture, Figs. 9 and 10 are diagrammatic cross-sectional views of other embodiments of the device in accordance with the invention, Fig. 11 is a diagrammatic cross-sectional view of 15 a modified embodiment of the construction shown in Fig. 1, and Fig. 12 is a diagrammatic cross-sectional view of a semiconductor device comprising more than two lasers.
The drawings are purely diagrammatic and not to 20 scale. Corresponding parts are generally referred to by the same reference numerals. Semiconductor regions of the same conductivity type are shaded in the same direction in the cross-sectional views.
Fig. 1 shows partly in cross-section and partly 25 in perspective a semiconductor laser device according to the invention. The device serves to generate two mutually sub-stantially parallel radiation beams 1 and 2, see Fig. 1, which in this example have different frequencies. Thedevice comprises a semiconductor wafer 3 having a first major sur-30 face 4 and a second major surface 5. The semiconductor wafer3 comprises between the major surfaces 4 and 5 and beside each other a first part I and an adjoining part II. The semiconductor wafer 3 is further bounded by two substant-ially parallel reflective side surfaces 6 and 7 - the front 35 and rear faces in Fig. 1 - extending perpendicularly to the direction of the radiation beams 1 and 2. The semiconductor body of the device comprises a substrate 8 of a first con-ductivity type adjoining the second major surface 5. In this example the substrate 8 is of _-type gallium arsenide P~IN 9981 9 15-1-1982 having a doping of 1018 silicon atoms per cm3, although in principle a p-type substrate might also be used. A
first passive layer 9 of the first conductivity type, so in this case n-conductivity type, a first active layer 10 and a second passive layer 11 are provided successive-ly on the substrate 8 and extent together with the substrate 8 in the said two parts I and II of the semi-conductor wafer 3.
Furthermore, and only in the second part II of the semiconductor wafer, a second active layer -12 and a third passive layer 13 are provided successively on the ~second passive layer 11. The active layers 10 and 12 are each present between passive layers (9 and 11, and 11 and 13, respectively), with larger forbidden band gap. Fur-15 thermore the first active layer 10 comprises in the first~art I a ~-n junction and the second active layer l2 com-prises in the second part II a ~-n junction 16. Each of these p-n junctions 15 and l6 can emit one of the said radiation beams (p-n junction l5 beam 1 and p-n ~unction 20 16 beam 2) when the current in the forward direction is suf-ficiently high. For that purpose, the substrate 8 is connected to a first electrode 17, the second passive layer 11 is connected to a second electrode 18 and the third passive layer 13 is connected to a third electrode 25 19 (via a semiconductor contact layer 14). The contact layer 14 serves to promote a good ohmic contact with the third passive layer 13 but is not strictly necessary.
According to -the invention the -third passive layer 13 is of the second conductivity type, so in this 30 example of the p--type~ Furthermore according to the in-vention a region 20 is formed locally in one of the said parts of -the semiconductor wafer, in this example in the first part I, and extends from the first major surface 4 through the uppermost passive layer 11, the adjoining ac-35 tive layer 10 and a part of the underlying passive layer9. According to the invention the three layers 9, 10 and 11 all have the same conductivity type, opposite to that of the region 20. The region 20 forms, wi-th the remaining ~173549 part of the active layer 10, the first p-n junction 15 which extends transversely to said layer 10 and to the side surfaces 6 and 7 and continues througn the layers 9 and 11 and bounds the region 20. The second p-n junction 16 extends parallel to the second ma.jor surface 5 and has a strip-shaped active region 16A which also extends trans-versely to the side surfaces 6 and 7.
In the embodiment according to this example the ~irst active layer 10 and the second passive layer 11 are 10 both of the first n-conductivity type while the region 20 is of the second ~-conductivity type and in the first part I of the semiconductor plate locally extends through the second passive layer 11, the first active layer 10 and a part of the first passive layer 9. The region 20 e~-l5 tends from the edge of the semiconductor wafer 3, isspaced apart from the second part II of the semiconduc-tor wafer and forms there the first p-n junction 15.
In the example shown in Fig. 1 the following compositions and dopings of the various layers were used:
20 Layer Material thickness dopin~ atoms/cm3 (/um) 8(substrate) N GaAs 90 Si 1o18 9 N Alo 5GaO 5As 5 Te 1o17 10(active) N Alo 15GaO 85As 0.2 Te 1o18 25 11 N Alo 5GaO 5As 1.5 Te 10 7 12(active) Alo 05GaO 95As 0.2 undoped 17 13 P Alo 4GaO 6As 2 Ge 5x10 14 P GaAs 1 Ge 2x10 The width of the strip-shaped ~-n junction 15 of the TJS-30 laser formed in part I is determined by the thickness of the layer 10 and thus is only 0.2/um. The strip-shaped active region 16 A of the p-n junction 16 is bounded by proton-bombarded, electrically substantially insulating zones 21A and 21B (shown in broken lines in the figures) 35 extending into the proximity of the associated active layer 12. In this example such an insulating zone (21C!
is also present between the region 20 and the adjoining part II of the semiconductor wafer. The region 21C extends 11735~9 PHN 998l 11 15~ l982 into the proximity of the active layer 10 and promotes the lateral electric separation of both lasers, but is not st;rictly necessary.
Upon applying a sufficiently high voltage in the forward direction between the electrodes 17 and 1~ and between the electrodes 17 and 19, coherent light beams (beam 1 having a wavelength of about 780 nm and beam 2 having a wavelength of about 850 nm) are emitted by the TJS laser and the DH-laser, respectively. The radiating facets, shaded dark in Fig. 1, may be provided very closely together, for example, at a mutual distance of 10/um or less. The beams 1 and 2 then are so close together that they can be directly coupled in one optical fibre without a mixing device, so as to transfer infor-15 mation via two different wavelengths.
In applications for the manufacture of opticalinformation disks (DOR), the beam 2 originating from the DH-laser with comparatively large power may be used for burning the required holes in the reflective layer of 20 the plate with, for example, pulses of 60 mW with a dura-tion of, for example, 50 ns, while the beam 2 of much smaller power may be used for the immediate subsequent reading and checking by causing the beam 1 to reflect against the "written" reflective surface of the DOR plate 25 and reading the reflected beam by means of a detector.
According to the invention the semiconductor laser device of Fig. 1 may be manufactured as follows.
The starting material is a substrate of n-type gallium-arsenide with a thickness of 350/um, a surface oriented 30 according to the (100) crystal orientation, and a doping of 10 silicon atoms per cm3. In a manner conventionally used in semiconductor technology the layers 9 to 14 described above are successively grown from the liquid phase on said substrate. For the details of said method, 35 which are of no significance for the invention, reference may be made, for e~ample, to the book "Crystal Growth from High-Temperature Solutions" by D.Elwell and J.J.Scheel, Academic Press 1975, ~. 433.467.
1~73S49 ~ n insulating masking layer 22, for example of silicon oxide, is then vapour-deposited on the surface of the contact layer 14 to a thickness of a few -tenth of a /um. Sillcon nitride, aluminium oxide or another electrically insulating material may also be used instead of silicon oxide. An etching mask is formed from said cilison oxide layer 22 by means of known photoetching methods, see Fig. 2.
Over the part of the surface not covered by the lO mask 22, the layers 14, 13 and 12 and a small part of the layer 11 are then removed by etching. For etching gallium-arsenide and gallium aluminium arsenide various selective or non-selective etchants are known which are described, for example, in the article by Tijhurg and l5 van Dongen, "Selective Etching of III-V compounds with Redox Systems" in Journal of the Electrochemical Society, vol. 123, No. 5, May 1976, pp. 687-691. After removing the mask 22, a fresh masking layer 23, for example also of silicon-oxide, or of another insulating material, is 20 vapour-deposited, see Fig. 3. The layer 23 is partly removed by photoetching so that beside the mesa an edge of approximately 5/um width remains. A first zinc diffusion is then carried out (see Fig. 4) so that a ~-type region 20 is formed. This region extends, at 25 least after the subsequent thermal treatments, through the lay-ers 11 and 10 and through a part of the layer 9.
A part of the masking layer 23 is then etched away also on top of the mesa, up to a distance of appro-ximately 5/um from the edge of the mesa. A second zinc 30 diffusion with smaller depth and with a higher zinc con-centration than the first zinc diffusion is then carried out, so tha-t within the region 20 a part 20 A (see Fig.
5) with higher doping concentration is formed, and a highly doped region 14A is also formed in the contact 35 layer 14, which facilitates contacting. The zinc diffusion penetrates deeper into the layers 9~ 10 and l1 than into the layer 14 because, as is known, the diffusion coeffi-cient of zinc at the same temperature is larger in P~-IN 998l l3 15-1-l982 gallium aluminium arsenide than in gallium arsenide.
As a result of the double zinc diffusion the region 20 consists of a degenerate doped part 20A and a lower non-degenerate doped part 20B adjoining the ~-n junctioll 15. The active radiating part of the TJS-laser is boundad laterally by the P*P junction between the parts 20A and 20B and by the ~-n junction 15, and is approximately 1/um wide.
A metal layer 24 is then vapour-deposited over the whole upper surface (see Fig. 5). This may be a simple metal layer, but in this example the layer 24 consists of successively a 50 nm thick layer of chromium, a 100 nm thick layer of platinum and a 50 nm thick layer of gold.
By means of an etchant which, when the layer 23 is a silicon oxide layer, may consist of a solution of ammonium-bifluoride in water, the uppermost surface layer of the layer 23 is then etched away together with the part of the metal layer 24 present thereon so that the separated electrode layers 18 and 19 are formed.
The metal layer 19 on top of the mesa is then covered, for example, by means of a photolacquer layer 25 which need not be aligned accurately. A gold layer 26 is then grown (see Fig. 7) in -the usual manner by elec-tro-plating on the exposed part of the metal layer 24 25 beside the mesa, to a thickness of approximately 3/um which gold layer also grows laterally over a distance of a few /um on the insulating layer 23 and extends to beyond the p-n junction 15.
The photolacquer layer 25 is then removed and 30 a wire mask~ for example a tungsten wire 27 having a dia-meter of 5/um, is provided on the upper surface of the mesa. The upper surface is then bombarded with protons 28 (see Fig. 8) with an energy of 200 keV and a dose of 10 5 protons per cm . As a result of this electrically 35 substantially insulating zones 21A, B and C are formed in -the semiconductor material, shown in broken lines in Fig. 8.-The zones extend down to a depth of approximately 1.5/um from the surface. The tungsten wire 27 and the gold PHN 9981 IL~ 15-1-1982 contact 26 serve as a mask in this proton bombardment.
The semiconductor wafer is then reduced to an overall thickness of approximately 100/um by grinding and etching. The lower side of the wafer is then covered with a metal layer 17, for example a gold germanium nickel layer, which is then alloyed, the metal layers 18 and l9 being alloyed simultaneously.
~ utually parallel cleavage surfaces are then provided at a mutual distance of approximately 250/um.
lO They may be covered, if desired, with a protective dielectric layer but at least one of the cleavage faces must be transparent to the emitted radiation.
The device may then be mounted in various manners and be provided in an envelope dependent on the l~ use ~`ig 1 shows how the device wi-th the substrate 8 and the metal layer 17 is soldered on a cooling plate 29 for example of copper. By means of supply wires provided on said cooling plate 29, on the electrode layer 19 and on the gold contact 26, the -two lasers can 20 be operated independently of each other.
When, as in this example, the gold contact 26 with its upper surface is approximately level with the upper surface of the mesa, the cooling plate may in principle also be provided on the upper side In that 25 case, it should be ensured, in order to be able to operate the lasers independently of each other, that the two parts of the cooling plate which contact the elec-trode 19 and the gold contact 26 are electrically insulated from each other.
Although the above-described construction is to be preferred in most of the cases, many other embodi-ments are possible as will now be described in detail with reference to a few examples.
First of all it may be noted that by suitable 35 choice of the semiconductor materials of the various layers the wavelength of the beams 1 and 2 can be chosen within certain limits by those skilled in the art. It may be ensured, for example, that the wavelength of the .
TJS laser is not smaller but larger than or equal to that of the DH-laser. The metal layers and insulating layers chosen in the example of Fig. 1 may also be of a compo-sition differing from the one described. If desired the gold con-tact 26 may be omitted, provided the region 20 is screened from the proton bombardment in a different manner.
Furthermore, instead of the proton-bombarded strip laser used in this case, another conventional double hetero junction laser having its ~-n junction parallel or substantially parallel to the semiconductor layers may also be used. Examples of such lasers are sufficiently available in the technical literature;
reference may be made to the article by D.Botez in Jour-t5 nal of Optical Communications, 1980, ~ 42-50, in par-ticular Figs. 1, 3a, c, d, e and 9.
The region 20 may also be obtained in a manner other than by diffusion, for example, by contour epitaxy, in which first the volume to be occupied by the region 20 20 is etched away and is then filled by epitaxial growth.
Furthermore, the zind-diffused zone 14A is not strictly necessary. This zone may also be provided in a separate diffusion step. Otherwise, the layer 14 as a whole only serves for contacting and in the presence of an electrode 25 layer which forms a good ohmic contact of sufficient low resistance on the layer 13, it might also be omitted.
However, structures differing fromthe embodi-ment shown in Fig. 1 may in certain circumstances also be of advantage. For example, the second p~ssive layer 11 30 and the second active layer 12 (see Figs. 9 and 10) may be both of the second conductivity type opposite to that of the substrate 8, while the region 20 is of 'he same first conductivity type as the subs-trate 8 and, instead of in the first part I, extends locally in the mesa-35 shaped part II through the third passive layer 13, thesecond active layer 12 and a part of the second passive layer 11. Figs. 9 and 10 are diagrammatic cross-sectional views of two examples of such an embodiment. In the first example, shown in Fig. 9, the region 20 extends from the edge of the semiconductor wafer and is spaced apart from the first part I and forms the first p-n junction 15 there. In the second example shown in Fig. 10 the region 20 on its side remote from the first part I forms the first ~-n junction 15 and extends from the junction between the parts I and II. In both examples a method other than proton bombardment has been chosen for current limiting of the DH-laser, namely an oxide strip contact l on a surface which is otherwise covered by silicon oxide or another insulating layer 30, which strip contact may in addition be provided with a diffused or implanted con-tact zone 31 of the same conductivity type as the layer 11 but with a higher doping concentra-tion so as to improve the l5 contact resistance. Also, in contrast with the example of Fig. 1, the contact layer 14 has been omitted, assuming that the electrode layer 18 forms a sufficiently low-ohmic contact on the layer 13. The embodiments of Figs.
9 and 10, as well as that shown in Fig. 1, may be manu-20 factured using generally available semiconductor tech-nology. Since the conductivity of ~-type subs-trates of gallium arsenide at about the same doping concentration is worse than that of n-type substrates it is recommen-dable~ as shown in Figs. 9 and 10 by the shading, to 25 use an n-type substrate 8 and also an n-type region 20 in these cases. When a GaAs - AlGaAs structure is used, the region 20 is difficult to form by diffusion or cannot be formed by diffusion. Therefore the region 20 will preferably be formed by contour epitaxy as already des-30 cribed above.
It is furthermore to be noted that the embodimento:f Fig. 1 can in certain circumstances also be varied advantageously as is shown in the diagrarnmatic cross-sectional view of Fig. 11. According to this modified 35 embodiment in which the region 20 is bounded by an elec-trically insulating region 40 on the side of the second part II of the semiconductor wafer, the p-n junction 15 is formed on the side of the region 20 remote from the mesa-shaped second part II.
Although in the embodiments described the p-n junction 16 of the conventional DH-laser coincides sub-stantially with the hetero junction between the active layers and one of the adjoining passive layers~ this need not be the case. The ~-n junction may also extend within the active layer 12 parallel to the interfaces with the passive layers.
Although only gallium arsenide and gallium aluminium arsenide have been mentioned as semiconductor materials in the examples described, other semiconductor materials suitable for the manufacture of lasers may also be used.
Finally, the semiconductor device according to 15 the invention may also comprise more than two lasers. For example, the diagrammatic cross-sectional view of Fig.
12 shows a device having a conventional DH-laser and two TJS-lasers. The device comprises three active layers 40 ~ 10 and 12 and may be constructed from the same materi-- 20 als as the Fig. 1 example, in which two extra layers, an N+ active layer 40 and an N passive layer 41, have been added, both of gallium aluminium arsenide. The device comprises two diffused regions 20 and 20'. By suitable choice of the material, three beams with three different 25 frequencies can be generated herewith.
PHN 99~1 l 15-1-1982 "Semiconductor laser having at least two radiation beams, and method of manufacturing sHme."
. ~ .
The invention relates to a semiconductor laser device for generating radiation beams which are substan-tially parallel to each other, comprising a semiconductor wafer having a first and a second major surface and com-prising, between said major surfaces and beside eachother, at least a first part and an adjoining second part, which semiconductor wafer is further bounded by two substantially parallel reflective side faces extending perpendicularly to the direction of said radiation beams lO and comprises a substrate of a first conductivity type adjoining the second major surface, on which substrate are provided successively a first passive layer of the first conductivity type, a first active layer and a second passive layer which layers, together with the l5 substrate, extend in both parts o~ the semiconductor wafer, and only in the second part there are provided on the second passive layer successively a second active layer and a third passive layer, each active layer being provided between passive layers having a larger forbidden 2D band gap, the first active layer comprising a pn-junction in said first part and the second active layer comprising a pn-junction in said second part, each of which pn-junctions emits, at sufficiently high forward current one of said radiation beams, the substrate being connected 25 to a first electrode, the second passive layer being connected to a second electrode, and the third passive layer being connected to a third electrode.
The invention furthermore relates to a method of manufacturing the device.
It is to be noted that when an active layer is said to comprise a p-n junction, this pn-junction may be present either inside the active layer or at the interface between the active layer and an adjoining passive layer.
117~549 Furthermore, substantially parallel radiation beams are to be understood to mean radiation beams the centre lines of which extend substantially parallel but which in them-selves may be more or less diverging.
A semiconductor laser device as described above is known from Applied Physics Letters, vol. 35, No. 8, October 15, 1971, pp. 588-589.
For various applications it is of importance to have two mutually substantially parallel laser beams 10 at a small distance from each other.
A first known application is found in devices for optical communication where light signals of a laser source are coupled into an optical fibre for transmitting information which is read out at the other end of the 15 optical fibre by méans of a radiation detector. The quan-tity of information (for example the number of telephone calls) which can be transpo~ted simultaneously through the same~:optical fibre can be doubled by using a radi-ation source which transmits two or more different fre-20 quencies; this is known as wavelength multiplexing. Forthat purpose, for example, t~e light of each of two lasers of different wavelengths may be coupled into a separate optical fibre and the light of the two fibres may then be combined in one single optical fibre by 25 means of a mixing device. However, this mixing process gives considerable losses. If it were possible to couple the light of the two lasers directly in one single op-tical fibre, these losses could be avoided. EIowever, this can be done only when the radiation sources are 30 situated very close together.
Another applica-tion may be found in providing information on disks by optical methods ("digital optical recording" or DOR), in which method holes are burned in a reflecting layer by means of a laser beam. In order to 35 check the correctness of the information thus written?
it is read out by means of a second laser which is mounted behind the first laser. The two radiation beams may have the same frequencies, although for reasons of circuitry ~173549 for a good separating of the signal it is desirable that the beams have different frequencies. This may be done by means of a second laser mounted in a separate optical mounting (or "light pencil") which solution, however, involves an expensive construction. The radiation beam of one single laser can also be split by means of an optical system into a "write" beam and a "read" beam. However, this is not economic since a large energy is already required for "writing" and bv splitting the radiation beam the power of -the laser must be increased even more, which involves problems with respect to cooling and cost-price. Finally, two separate lasers mounted on one single cooling plate may also be used. For this purpose, however, the lasers should be aligned very precisely relative to 15 each other, while even then the minimum distance between the emissive facets is at least equal to the width of each of the semiconductor wafers.
The semiconductor laser device described in the said article in Applied Physics Letters, 35 (8), October 20 15~ 1979, pp. 588-589 comprises in the same semiconductor body two lasers beside each other of the so-called double hetero junction type (DH lasers) with mutually parallel extending radiating ~-n junctions. However, for use in the above-mentioned applications this device has various 25 disadvantages.
First of all, the series resistance of at least one of the integrated lasers is high since the current through said laser must flow through one of the passive layers over a comparatively large distance.
Furthermore~ as is also noted in the said article, the emissive facets are so far apart that it is difficult to couple the two laser beams directly in one optical fibre. This disadvantage applies to an even greater extent when said optical fibre is a so-called 35 "monomode" fibre such as is often desired particularly in optical communication, since said fibres have very small diameters.
One of the objects of the invention is to 11735~9 PEIN 9981 ~ 15-1-1982 remove or at least considerably reduce the drawbacks associated with the known semicorlductor laser device.
The invention is based inter alia on the re-cognition that the end in view can be reached by inte-gration of two lasers of different structure, the p-n junction surfaces of which are not parallel, all this in such manner that the technology used for the manufacture of the conventional double hetero junction laser with a ~-n junction parallel to the direction of the layer can be used for the construction of the required layer structure of the device.
For that purpose, a semiconductor laser device of the kind described in -the opening paragraph according to the invention is characterized in that -the third 15 passive layer is of the second conductivity type and that in one of said parts of the semiconductor wafer a region is formed locally which extends from the first major surface through the uppermost passive layer, the adjoining active layer and a part of the underlying passive layer, 20 the three layers all having -the same conductivity type which is opposite to that of said region, said region forming with the remaining part of the adjoining active layer the first p-n junction extending -transversely to said active layer and to said side surfaces, the second 25 psrl junction extending parallel to the second ma~or sur-face and comprising a strip-shaped active region also ex-tending transversely to the side surfaces.
The semiconductor laser device according to the invention comprises two lasers of essen-tially dif-30 ferent construction in the same semiconductor wafer, namely a "conventional" double hetero-junction (DH) laser, and a so-called TJS ("Transverse Junction Stripe") laser.
This latter laser is known per se from United States Patent Specification No. 3,961,996.
An important advantage of the device in ac-cordance with the invention is that the radiating facets of both lasers can be provided very close together. As a result of this the radiation beams originating from PHN 99~1 5 15-1-1982 both lasers can be coupled directly in one single optical fibre without an intermediate op-tical mi.Ying device. Such a small distance between the emissive facets is techno-logically realisable in that the surface of the radiating p-n junction of the TJS laser is perpendicular to the active layer and can as a resul-t be provided very close to the ~H laser in a manner so as not to be hindered by insulation regions serving for the lateral confinement of the active region.
The device according to the invention is also very suitable for -the already mentioned use of pro-viding information on disks by optical methods (DOR), in which a "write" laser of a comparatively large power is necessary to write the information while for reading 15 for control purposes a "read" laser of a much smaller power is sufficient, the so-called DRAI~ (Direct Read And Write)-system. As a result of the very narrow active ~-n junction the width of which is equal to the thickness of the active layer, the TJS laser requires a small power 20 as compared with the adjacent DH-laser which small power, however, is sufficient for the reading function, while its low dissipation simplified the cooling problem.
Furthermore, the radiation beam of a TJS-laser shows substantially no astigmatism so that no exter-25 nal correction lens is necessary for said laser, which simplifies the construction. Since the current for -the TJS-laser passes substantially only through the active layer, the efficiency of said laser moreover is very favourable.
As regards the manufacture of the device in accordance with the invention it is a very important ad-vantage that it may be started from a layer structure as is usually used for the manufacture of a double hetero junction laser, with the only difference that two e~$ra 35 layers are grown. After completion of the layer structure the DH-laser can be finished in the usual manner, while for realising the TJS-laser only an etching step and a diffusion step are necessary, at least in the case when P~IN 9981 6 15-1-1982 tlle said region is formed by diffusion. ~s a matter of fact, said region can also be formed differently, for example, by ion implantation, or by contour epitaxy, or by a combination of one of these techniclues with a diffusion step.
According to a first important preferred em-bodinlent the first active layer and the second passive layer are of the first conductivity type, while the said region is of the second aonductivity type and ex-tends locally in the first part of the semiconductor waferthrough the second passive layer, the first active layer and a part of -the first passive layer. Starting from a substrate (usually N-type) which is usual for making conventional double hetero junction lasers and on which two extra layers are grown (the first active layer and the second passive layer), a layer structure may be grown which is generally used for said laser, after which in the first part of the plate the uppermost layers are etched away down to the second passive layer and by local 20 use of, for example, a double zinc diffusion the region of the second conductivity type is formed to obtain the TJS-laser.
Slightly less favourable but in certain circum-stances of advantage is a second preferred embodiment 25 in which the second passive layer and the second active layer are both of the second conduc-tivity type, while the said region is of the first conductivity type and extends locally in the second part of the semiconductor wafer through the third passive layer, the second active 30 layer and a part of the second passive layer. In contrast with the preceding embodiment, the TJS-laser in this embodiment is present in the mesa-shaped projectiIlg part of the semiconductor plate. A practical disadvantage of this embodiment is that in practice gallium arsenide 35 and mixed crystals thereof with other III-V elements are often used as semiconductor materials, while for the formation of diffused regions therein zinc is used as the best suitable activator. Since zinc in these materials is P~N 9981 7 15-1-1982 an acceptor, the substrate will have to be ~-type con-ductive when using these materials in forming the said region by diffusion. Due to the smaller mobility of holes with respect to electrons the substrate will thereby easily form too high a series resistance. When, however, the said region is not manufactured by diffusion ~ut by means of another method, for example, contour epitaxy or ion implantation, the said region may be made n-type conductive. The substrate may then also be n-type con-ductive so that the said disadvantage of high seriesresistance in this embodiment is avoided.
According to a further preferred embodiment the semiconductor laser device is characterized in that the strip-shaped active region of the second ~-n junction is 15 bounded by proton-bombarded, electrically substantially insulating æones extending at least into the proximity of the associated active layer.
The invention furthermore relates to a method of manufacturing the semiconductor la~er device, which 20 method is characterized in that at least a first passive layer of the first conductivity type, a first active layer of the first conductivity type, a second passive layer of the first conductivity type~ a second active layer, and a third passive layer of the second conductivity type are 25 provided successively on a substrate of a first conduc-tivity type by epitaxial growth, that the third passive layer, the second active layer and at most a part of the second passive layer are then removed over a part of the surface of the resulting layer structure, after which at 30 least said surface part is coated with a masking layer which has a diffusion window and a dopant determining the second conductivity type is then indiffused v a said window in two steps, in which in a first diffusion step a non-degenerate doped region is formed which extends 35 through the second passive layer and the first active layer over part of the thickness of the first passive layer and in a second, less deep diffusion step a part of said region extending through the first active layer is converted into degenerate doped material.
The invention will now be described in greater detail with reference to a few examples and the drawing, in which Fig. 1 shows partly in cross-section and partly in perspective a semiconductor laser device according to the invention, Figs. 2 to 8 are diagrammatic cross-sectional views of the device shown in Fig. 1 in successive stages 10 of manufacture, Figs. 9 and 10 are diagrammatic cross-sectional views of other embodiments of the device in accordance with the invention, Fig. 11 is a diagrammatic cross-sectional view of 15 a modified embodiment of the construction shown in Fig. 1, and Fig. 12 is a diagrammatic cross-sectional view of a semiconductor device comprising more than two lasers.
The drawings are purely diagrammatic and not to 20 scale. Corresponding parts are generally referred to by the same reference numerals. Semiconductor regions of the same conductivity type are shaded in the same direction in the cross-sectional views.
Fig. 1 shows partly in cross-section and partly 25 in perspective a semiconductor laser device according to the invention. The device serves to generate two mutually sub-stantially parallel radiation beams 1 and 2, see Fig. 1, which in this example have different frequencies. Thedevice comprises a semiconductor wafer 3 having a first major sur-30 face 4 and a second major surface 5. The semiconductor wafer3 comprises between the major surfaces 4 and 5 and beside each other a first part I and an adjoining part II. The semiconductor wafer 3 is further bounded by two substant-ially parallel reflective side surfaces 6 and 7 - the front 35 and rear faces in Fig. 1 - extending perpendicularly to the direction of the radiation beams 1 and 2. The semiconductor body of the device comprises a substrate 8 of a first con-ductivity type adjoining the second major surface 5. In this example the substrate 8 is of _-type gallium arsenide P~IN 9981 9 15-1-1982 having a doping of 1018 silicon atoms per cm3, although in principle a p-type substrate might also be used. A
first passive layer 9 of the first conductivity type, so in this case n-conductivity type, a first active layer 10 and a second passive layer 11 are provided successive-ly on the substrate 8 and extent together with the substrate 8 in the said two parts I and II of the semi-conductor wafer 3.
Furthermore, and only in the second part II of the semiconductor wafer, a second active layer -12 and a third passive layer 13 are provided successively on the ~second passive layer 11. The active layers 10 and 12 are each present between passive layers (9 and 11, and 11 and 13, respectively), with larger forbidden band gap. Fur-15 thermore the first active layer 10 comprises in the first~art I a ~-n junction and the second active layer l2 com-prises in the second part II a ~-n junction 16. Each of these p-n junctions 15 and l6 can emit one of the said radiation beams (p-n junction l5 beam 1 and p-n ~unction 20 16 beam 2) when the current in the forward direction is suf-ficiently high. For that purpose, the substrate 8 is connected to a first electrode 17, the second passive layer 11 is connected to a second electrode 18 and the third passive layer 13 is connected to a third electrode 25 19 (via a semiconductor contact layer 14). The contact layer 14 serves to promote a good ohmic contact with the third passive layer 13 but is not strictly necessary.
According to -the invention the -third passive layer 13 is of the second conductivity type, so in this 30 example of the p--type~ Furthermore according to the in-vention a region 20 is formed locally in one of the said parts of -the semiconductor wafer, in this example in the first part I, and extends from the first major surface 4 through the uppermost passive layer 11, the adjoining ac-35 tive layer 10 and a part of the underlying passive layer9. According to the invention the three layers 9, 10 and 11 all have the same conductivity type, opposite to that of the region 20. The region 20 forms, wi-th the remaining ~173549 part of the active layer 10, the first p-n junction 15 which extends transversely to said layer 10 and to the side surfaces 6 and 7 and continues througn the layers 9 and 11 and bounds the region 20. The second p-n junction 16 extends parallel to the second ma.jor surface 5 and has a strip-shaped active region 16A which also extends trans-versely to the side surfaces 6 and 7.
In the embodiment according to this example the ~irst active layer 10 and the second passive layer 11 are 10 both of the first n-conductivity type while the region 20 is of the second ~-conductivity type and in the first part I of the semiconductor plate locally extends through the second passive layer 11, the first active layer 10 and a part of the first passive layer 9. The region 20 e~-l5 tends from the edge of the semiconductor wafer 3, isspaced apart from the second part II of the semiconduc-tor wafer and forms there the first p-n junction 15.
In the example shown in Fig. 1 the following compositions and dopings of the various layers were used:
20 Layer Material thickness dopin~ atoms/cm3 (/um) 8(substrate) N GaAs 90 Si 1o18 9 N Alo 5GaO 5As 5 Te 1o17 10(active) N Alo 15GaO 85As 0.2 Te 1o18 25 11 N Alo 5GaO 5As 1.5 Te 10 7 12(active) Alo 05GaO 95As 0.2 undoped 17 13 P Alo 4GaO 6As 2 Ge 5x10 14 P GaAs 1 Ge 2x10 The width of the strip-shaped ~-n junction 15 of the TJS-30 laser formed in part I is determined by the thickness of the layer 10 and thus is only 0.2/um. The strip-shaped active region 16 A of the p-n junction 16 is bounded by proton-bombarded, electrically substantially insulating zones 21A and 21B (shown in broken lines in the figures) 35 extending into the proximity of the associated active layer 12. In this example such an insulating zone (21C!
is also present between the region 20 and the adjoining part II of the semiconductor wafer. The region 21C extends 11735~9 PHN 998l 11 15~ l982 into the proximity of the active layer 10 and promotes the lateral electric separation of both lasers, but is not st;rictly necessary.
Upon applying a sufficiently high voltage in the forward direction between the electrodes 17 and 1~ and between the electrodes 17 and 19, coherent light beams (beam 1 having a wavelength of about 780 nm and beam 2 having a wavelength of about 850 nm) are emitted by the TJS laser and the DH-laser, respectively. The radiating facets, shaded dark in Fig. 1, may be provided very closely together, for example, at a mutual distance of 10/um or less. The beams 1 and 2 then are so close together that they can be directly coupled in one optical fibre without a mixing device, so as to transfer infor-15 mation via two different wavelengths.
In applications for the manufacture of opticalinformation disks (DOR), the beam 2 originating from the DH-laser with comparatively large power may be used for burning the required holes in the reflective layer of 20 the plate with, for example, pulses of 60 mW with a dura-tion of, for example, 50 ns, while the beam 2 of much smaller power may be used for the immediate subsequent reading and checking by causing the beam 1 to reflect against the "written" reflective surface of the DOR plate 25 and reading the reflected beam by means of a detector.
According to the invention the semiconductor laser device of Fig. 1 may be manufactured as follows.
The starting material is a substrate of n-type gallium-arsenide with a thickness of 350/um, a surface oriented 30 according to the (100) crystal orientation, and a doping of 10 silicon atoms per cm3. In a manner conventionally used in semiconductor technology the layers 9 to 14 described above are successively grown from the liquid phase on said substrate. For the details of said method, 35 which are of no significance for the invention, reference may be made, for e~ample, to the book "Crystal Growth from High-Temperature Solutions" by D.Elwell and J.J.Scheel, Academic Press 1975, ~. 433.467.
1~73S49 ~ n insulating masking layer 22, for example of silicon oxide, is then vapour-deposited on the surface of the contact layer 14 to a thickness of a few -tenth of a /um. Sillcon nitride, aluminium oxide or another electrically insulating material may also be used instead of silicon oxide. An etching mask is formed from said cilison oxide layer 22 by means of known photoetching methods, see Fig. 2.
Over the part of the surface not covered by the lO mask 22, the layers 14, 13 and 12 and a small part of the layer 11 are then removed by etching. For etching gallium-arsenide and gallium aluminium arsenide various selective or non-selective etchants are known which are described, for example, in the article by Tijhurg and l5 van Dongen, "Selective Etching of III-V compounds with Redox Systems" in Journal of the Electrochemical Society, vol. 123, No. 5, May 1976, pp. 687-691. After removing the mask 22, a fresh masking layer 23, for example also of silicon-oxide, or of another insulating material, is 20 vapour-deposited, see Fig. 3. The layer 23 is partly removed by photoetching so that beside the mesa an edge of approximately 5/um width remains. A first zinc diffusion is then carried out (see Fig. 4) so that a ~-type region 20 is formed. This region extends, at 25 least after the subsequent thermal treatments, through the lay-ers 11 and 10 and through a part of the layer 9.
A part of the masking layer 23 is then etched away also on top of the mesa, up to a distance of appro-ximately 5/um from the edge of the mesa. A second zinc 30 diffusion with smaller depth and with a higher zinc con-centration than the first zinc diffusion is then carried out, so tha-t within the region 20 a part 20 A (see Fig.
5) with higher doping concentration is formed, and a highly doped region 14A is also formed in the contact 35 layer 14, which facilitates contacting. The zinc diffusion penetrates deeper into the layers 9~ 10 and l1 than into the layer 14 because, as is known, the diffusion coeffi-cient of zinc at the same temperature is larger in P~-IN 998l l3 15-1-l982 gallium aluminium arsenide than in gallium arsenide.
As a result of the double zinc diffusion the region 20 consists of a degenerate doped part 20A and a lower non-degenerate doped part 20B adjoining the ~-n junctioll 15. The active radiating part of the TJS-laser is boundad laterally by the P*P junction between the parts 20A and 20B and by the ~-n junction 15, and is approximately 1/um wide.
A metal layer 24 is then vapour-deposited over the whole upper surface (see Fig. 5). This may be a simple metal layer, but in this example the layer 24 consists of successively a 50 nm thick layer of chromium, a 100 nm thick layer of platinum and a 50 nm thick layer of gold.
By means of an etchant which, when the layer 23 is a silicon oxide layer, may consist of a solution of ammonium-bifluoride in water, the uppermost surface layer of the layer 23 is then etched away together with the part of the metal layer 24 present thereon so that the separated electrode layers 18 and 19 are formed.
The metal layer 19 on top of the mesa is then covered, for example, by means of a photolacquer layer 25 which need not be aligned accurately. A gold layer 26 is then grown (see Fig. 7) in -the usual manner by elec-tro-plating on the exposed part of the metal layer 24 25 beside the mesa, to a thickness of approximately 3/um which gold layer also grows laterally over a distance of a few /um on the insulating layer 23 and extends to beyond the p-n junction 15.
The photolacquer layer 25 is then removed and 30 a wire mask~ for example a tungsten wire 27 having a dia-meter of 5/um, is provided on the upper surface of the mesa. The upper surface is then bombarded with protons 28 (see Fig. 8) with an energy of 200 keV and a dose of 10 5 protons per cm . As a result of this electrically 35 substantially insulating zones 21A, B and C are formed in -the semiconductor material, shown in broken lines in Fig. 8.-The zones extend down to a depth of approximately 1.5/um from the surface. The tungsten wire 27 and the gold PHN 9981 IL~ 15-1-1982 contact 26 serve as a mask in this proton bombardment.
The semiconductor wafer is then reduced to an overall thickness of approximately 100/um by grinding and etching. The lower side of the wafer is then covered with a metal layer 17, for example a gold germanium nickel layer, which is then alloyed, the metal layers 18 and l9 being alloyed simultaneously.
~ utually parallel cleavage surfaces are then provided at a mutual distance of approximately 250/um.
lO They may be covered, if desired, with a protective dielectric layer but at least one of the cleavage faces must be transparent to the emitted radiation.
The device may then be mounted in various manners and be provided in an envelope dependent on the l~ use ~`ig 1 shows how the device wi-th the substrate 8 and the metal layer 17 is soldered on a cooling plate 29 for example of copper. By means of supply wires provided on said cooling plate 29, on the electrode layer 19 and on the gold contact 26, the -two lasers can 20 be operated independently of each other.
When, as in this example, the gold contact 26 with its upper surface is approximately level with the upper surface of the mesa, the cooling plate may in principle also be provided on the upper side In that 25 case, it should be ensured, in order to be able to operate the lasers independently of each other, that the two parts of the cooling plate which contact the elec-trode 19 and the gold contact 26 are electrically insulated from each other.
Although the above-described construction is to be preferred in most of the cases, many other embodi-ments are possible as will now be described in detail with reference to a few examples.
First of all it may be noted that by suitable 35 choice of the semiconductor materials of the various layers the wavelength of the beams 1 and 2 can be chosen within certain limits by those skilled in the art. It may be ensured, for example, that the wavelength of the .
TJS laser is not smaller but larger than or equal to that of the DH-laser. The metal layers and insulating layers chosen in the example of Fig. 1 may also be of a compo-sition differing from the one described. If desired the gold con-tact 26 may be omitted, provided the region 20 is screened from the proton bombardment in a different manner.
Furthermore, instead of the proton-bombarded strip laser used in this case, another conventional double hetero junction laser having its ~-n junction parallel or substantially parallel to the semiconductor layers may also be used. Examples of such lasers are sufficiently available in the technical literature;
reference may be made to the article by D.Botez in Jour-t5 nal of Optical Communications, 1980, ~ 42-50, in par-ticular Figs. 1, 3a, c, d, e and 9.
The region 20 may also be obtained in a manner other than by diffusion, for example, by contour epitaxy, in which first the volume to be occupied by the region 20 20 is etched away and is then filled by epitaxial growth.
Furthermore, the zind-diffused zone 14A is not strictly necessary. This zone may also be provided in a separate diffusion step. Otherwise, the layer 14 as a whole only serves for contacting and in the presence of an electrode 25 layer which forms a good ohmic contact of sufficient low resistance on the layer 13, it might also be omitted.
However, structures differing fromthe embodi-ment shown in Fig. 1 may in certain circumstances also be of advantage. For example, the second p~ssive layer 11 30 and the second active layer 12 (see Figs. 9 and 10) may be both of the second conductivity type opposite to that of the substrate 8, while the region 20 is of 'he same first conductivity type as the subs-trate 8 and, instead of in the first part I, extends locally in the mesa-35 shaped part II through the third passive layer 13, thesecond active layer 12 and a part of the second passive layer 11. Figs. 9 and 10 are diagrammatic cross-sectional views of two examples of such an embodiment. In the first example, shown in Fig. 9, the region 20 extends from the edge of the semiconductor wafer and is spaced apart from the first part I and forms the first p-n junction 15 there. In the second example shown in Fig. 10 the region 20 on its side remote from the first part I forms the first ~-n junction 15 and extends from the junction between the parts I and II. In both examples a method other than proton bombardment has been chosen for current limiting of the DH-laser, namely an oxide strip contact l on a surface which is otherwise covered by silicon oxide or another insulating layer 30, which strip contact may in addition be provided with a diffused or implanted con-tact zone 31 of the same conductivity type as the layer 11 but with a higher doping concentra-tion so as to improve the l5 contact resistance. Also, in contrast with the example of Fig. 1, the contact layer 14 has been omitted, assuming that the electrode layer 18 forms a sufficiently low-ohmic contact on the layer 13. The embodiments of Figs.
9 and 10, as well as that shown in Fig. 1, may be manu-20 factured using generally available semiconductor tech-nology. Since the conductivity of ~-type subs-trates of gallium arsenide at about the same doping concentration is worse than that of n-type substrates it is recommen-dable~ as shown in Figs. 9 and 10 by the shading, to 25 use an n-type substrate 8 and also an n-type region 20 in these cases. When a GaAs - AlGaAs structure is used, the region 20 is difficult to form by diffusion or cannot be formed by diffusion. Therefore the region 20 will preferably be formed by contour epitaxy as already des-30 cribed above.
It is furthermore to be noted that the embodimento:f Fig. 1 can in certain circumstances also be varied advantageously as is shown in the diagrarnmatic cross-sectional view of Fig. 11. According to this modified 35 embodiment in which the region 20 is bounded by an elec-trically insulating region 40 on the side of the second part II of the semiconductor wafer, the p-n junction 15 is formed on the side of the region 20 remote from the mesa-shaped second part II.
Although in the embodiments described the p-n junction 16 of the conventional DH-laser coincides sub-stantially with the hetero junction between the active layers and one of the adjoining passive layers~ this need not be the case. The ~-n junction may also extend within the active layer 12 parallel to the interfaces with the passive layers.
Although only gallium arsenide and gallium aluminium arsenide have been mentioned as semiconductor materials in the examples described, other semiconductor materials suitable for the manufacture of lasers may also be used.
Finally, the semiconductor device according to 15 the invention may also comprise more than two lasers. For example, the diagrammatic cross-sectional view of Fig.
12 shows a device having a conventional DH-laser and two TJS-lasers. The device comprises three active layers 40 ~ 10 and 12 and may be constructed from the same materi-- 20 als as the Fig. 1 example, in which two extra layers, an N+ active layer 40 and an N passive layer 41, have been added, both of gallium aluminium arsenide. The device comprises two diffused regions 20 and 20'. By suitable choice of the material, three beams with three different 25 frequencies can be generated herewith.
Claims (15)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A semiconductor laser device for generating at least two radiation beams which are substantially parallel to each other, comprising a semiconductor wafer having a first and a second major surface and comprising, between said major surfaces and beside each other, at least a first part and an adjoining second part, which semiconductor wafer is further bounded by two substan-tially parallel reflecting side surfaces extending per-pendicularly to the direction of the radiation beams and comprises a substrate of a first conductivity type ad-joining the second major surface, on which substrate are provided successively a first passive layer of the first conductivity type, a first active layer and a second passive layer, which layers, together with the substrate, extend in both parts of the semiconductor wafer, and only in said second part there are provided on the second pas-sive layer successively a second active layer and a third passive layer, each active layer being provided between passive layers having a larger forbidden band gap, the first active layer comprising a pn-junction in said first part and the second active layer comprising a pn-junction in said second part, each of which pn-junctions emits at sufficiently high forward current, one of said radi-ation beams, the substrate being connected to a first electrode, the second passive layer being connected to a second electrode, and the third passive layer being con-nected to a third electrode, characterized in that the third passive layer is of the second conductivity type and that in one of said parts of the semiconductor wafer a region is formed locally which extends from the first major surface through the uppermost passive layer, the adjoining active layer and a part of the underlying passive layer, the three layers all having the same eon-ductivity type opposite to that of said region, said region forming with the remaining part of said adjoining active layer the first p-n junction extending trans-versely to said active layer and to said side surfaces, the second p-n junction extending parallel to the second major surface and comprising a strip-shaped active region also extending transversely to the side surfaces.
2. A semiconductor laser device as claimed in Claim 1, characterized in that the two said radiation beams have different frequencies.
3. A semiconductor laser device as claimed in Claim 2, characterized in that the first p-n junction emits radiation of a higher frequency than the second junction.
4. A semiconductor laser device as claimed in Claim 1, characterized in that the first active layer and the second passive layer are both of the first conductiv-ity type,and the said region is of the second conductiv-ity type and extends locally in the first part of the semiconductor wafer through the second passive layer, the first active layer and part of the first passive layer.
5. A semiconductor laser device as claimed in Claim 4, characterized in that the region of the second conductivity type extends from the edge of the semicon-ductor wafer and is spaced from the second part of the semiconductor wafer, where it forms the first p-n junction.
6. A semiconductor laser device as claimed in Claim 4, characterized in that the region of the second conduc-tivity type on the side of the second part of the semi-conductor wafer is bounded by an electrically insulating region and on the side remote from the second part forms the first p-n junction.
7. A semiconductor laser device as claimed in Claim 1, characterized in that the second passive layer and the second active layer are both of the second conductivity type, and the said region is of the first conductivity type and extends locally in the second part of the semi-conductor wafer through the third passive layer, the second active layer and part of the second passive layer.
8. A semiconductor laser device as claimed in Claim 7, characterized in that the region of the first conduc-tivity type extends from the edge of the semiconductor wafer and is spaced from the first part of the semicon-ductor plate, where it forms the first p-_ junction.
9. A semiconductor laser device as claimed in Claim 7, characterized in that the region of the first conduc-tivity type extends from the junction between the first and the second part of the semiconductor wafer and forms the first p-n junction on its side remote from the first part.
10. A semiconductor laser device as claimed in Claim 1, characterized in that the space between the sur-face of the second passive layer and the first major sur-face in the first part of the semiconductor wafer is occupied mainly by a contact metal.
11. A semiconductor laser device as claimed in Claim 1, characterized in that the said region is p-type conduc-tive.
12. A semiconductor laser device as claimed in Claim 1, characterized in that the strip-shaped active region of the second p-n junction is bounded by proton-bombarded, electrically substantially insulating zones extending at least into the proximity of the associated active layer.
13. A semiconductor laser device as claimed in Claim 1, characterized in that an electrically insulating region which extends at least into the proximity of the first active layer is present between the said region and the adjoining one of the said two parts of the semiconductor wafer.
14. A method of manufacturing a semiconductor laser device as claimed in Claim 1, characterized in that at least a first passive layer of the first conductivity type, a first active layer of the first conductivity type, a second passive layer of the first conductivity type, a second active layer, and a third passive layer of the second conductivity type are provided successively on a substrate of a first conductivity type by epitaxial growth, that the third passive layer, the second active layer and at most a part of the second passive layer are then removed over a part of the surface of the resulting layer structure, after which at least said surface part is coated with a masking layer which has a diffusion window and a dopant determining the second conductivity type is then indiffused via said window in two steps, in which in a first diffusion step a non-degenerate doped region is formed which extends through the second passive layer and the first active layer over part of the thickness of the first passive layer and in a second, less deep diffusion step a part of said region extending through the first active layer is converted into degenerate doped material.
15. A method as claimed in Claim 14, characterized in that the substrate is of n-type gallium arsenide, that the various layers consist of gallium aluminium arsenide or of gallium arsenide and that the dopant comprises zinc.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8101409A NL8101409A (en) | 1981-03-23 | 1981-03-23 | SEMICONDUCTOR LASER WITH AT LEAST TWO RADIATION BEAMS, AND METHOD OF MANUFACTURING THESE. |
| NL8101409 | 1981-03-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1173549A true CA1173549A (en) | 1984-08-28 |
Family
ID=19837208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000398701A Expired CA1173549A (en) | 1981-03-23 | 1982-03-18 | Semiconductor laser having at least two radiation beams, and method of manufacturing same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4476563A (en) |
| EP (1) | EP0061220B1 (en) |
| JP (1) | JPS57169291A (en) |
| CA (1) | CA1173549A (en) |
| DE (1) | DE3265338D1 (en) |
| IE (1) | IE53373B1 (en) |
| NL (1) | NL8101409A (en) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8104068A (en) * | 1981-09-02 | 1983-04-05 | Philips Nv | SEMICONDUCTOR LASER. |
| NL8200414A (en) * | 1982-02-04 | 1983-09-01 | Philips Nv | SEMICONDUCTOR DEVICE FOR GENERATING AT LEAST TWO RADIUS BEAMS AND METHOD OF MANUFACTURING THESE |
| FR2525033B1 (en) * | 1982-04-08 | 1986-01-17 | Bouadma Noureddine | SEMICONDUCTOR LASER HAVING SEVERAL INDEPENDENT WAVELENGTHS AND ITS MANUFACTURING METHOD |
| US4517667A (en) * | 1982-06-10 | 1985-05-14 | Xerox Corporation | Direct read after write optical disk system |
| US4603421A (en) * | 1982-11-24 | 1986-07-29 | Xerox Corporation | Incoherent composite multi-emitter laser for an optical arrangement |
| JPS59123289A (en) * | 1982-12-28 | 1984-07-17 | Matsushita Electric Ind Co Ltd | Semiconductor laser array device |
| US4637122A (en) * | 1983-09-19 | 1987-01-20 | Honeywell Inc. | Integrated quantum well lasers for wavelength division multiplexing |
| JPS6167286A (en) * | 1984-09-07 | 1986-04-07 | Sharp Corp | Semiconductor laser array element |
| US4605942A (en) * | 1984-10-09 | 1986-08-12 | At&T Bell Laboratories | Multiple wavelength light emitting devices |
| US4747110A (en) * | 1985-02-13 | 1988-05-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device capable of emitting laser beams of different wavelengths |
| US4740978A (en) * | 1985-03-14 | 1988-04-26 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Integrated quantum well lasers having uniform thickness lasing regions for wavelength multiplexing |
| JPS61287289A (en) * | 1985-06-14 | 1986-12-17 | Sharp Corp | Semiconductor laser device for light memory |
| JPS6395682A (en) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | End-surface light-emitting device |
| FR2605801B1 (en) * | 1986-10-23 | 1989-03-03 | Menigaux Louis | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE CAPABLE OF MULTI-WAVELENGTH LENGTH, AND DEVICE OBTAINED |
| US4843031A (en) * | 1987-03-17 | 1989-06-27 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating compound semiconductor laser using selective irradiation |
| JPH0620154B2 (en) * | 1988-03-05 | 1994-03-16 | 鐘淵化学工業株式会社 | Manufacturing method of semiconductor device |
| JP2686764B2 (en) * | 1988-03-11 | 1997-12-08 | 国際電信電話株式会社 | Method for manufacturing optical semiconductor device |
| US5038185A (en) * | 1989-11-30 | 1991-08-06 | Xerox Corporation | Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors |
| US5048040A (en) * | 1990-03-08 | 1991-09-10 | Xerox Corporation | Multiple wavelength p-n junction semiconductor laser with separated waveguides |
| US5071786A (en) * | 1990-03-08 | 1991-12-10 | Xerox Corporation | Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides |
| FR2684237B1 (en) * | 1991-11-22 | 1993-12-24 | Thomson Hybrides | INTEGRATED CIRCUIT OF SEMICONDUCTOR LASERS AND METHOD FOR PRODUCING THE SAME. |
| JPH0696468A (en) * | 1992-09-14 | 1994-04-08 | Canon Inc | Optical recording and reproducing device and semiconductor laser array |
| US5319655A (en) * | 1992-12-21 | 1994-06-07 | Xerox Corporation | Multiwavelength laterally-injecting-type lasers |
| JP2004328011A (en) * | 1998-12-22 | 2004-11-18 | Sony Corp | Manufacturing method of semiconductor light emitting device |
| JP4821829B2 (en) * | 1998-12-22 | 2011-11-24 | ソニー株式会社 | Manufacturing method of semiconductor light emitting device |
| KR100988083B1 (en) * | 2003-06-03 | 2010-10-18 | 삼성전자주식회사 | Semiconductor laser device |
| US7310358B2 (en) * | 2004-12-17 | 2007-12-18 | Palo Alto Research Center Incorporated | Semiconductor lasers |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5751276B2 (en) * | 1973-10-23 | 1982-11-01 | ||
| US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
| US4199385A (en) * | 1977-09-21 | 1980-04-22 | International Business Machines Corporation | Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion |
| US4185256A (en) * | 1978-01-13 | 1980-01-22 | Xerox Corporation | Mode control of heterojunction injection lasers and method of fabrication |
| JPS54107689A (en) * | 1978-02-10 | 1979-08-23 | Nec Corp | Semiconductor laser element |
| JPS55165691A (en) * | 1979-06-13 | 1980-12-24 | Nec Corp | Compound semiconductor laser element |
| US4280108A (en) * | 1979-07-12 | 1981-07-21 | Xerox Corporation | Transverse junction array laser |
-
1981
- 1981-03-23 NL NL8101409A patent/NL8101409A/en not_active Application Discontinuation
-
1982
- 1982-02-25 US US06/352,502 patent/US4476563A/en not_active Expired - Fee Related
- 1982-03-08 DE DE8282200293T patent/DE3265338D1/en not_active Expired
- 1982-03-08 EP EP82200293A patent/EP0061220B1/en not_active Expired
- 1982-03-18 CA CA000398701A patent/CA1173549A/en not_active Expired
- 1982-03-22 IE IE653/82A patent/IE53373B1/en unknown
- 1982-03-23 JP JP57046139A patent/JPS57169291A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IE53373B1 (en) | 1988-10-26 |
| NL8101409A (en) | 1982-10-18 |
| EP0061220B1 (en) | 1985-08-14 |
| JPS57169291A (en) | 1982-10-18 |
| EP0061220A1 (en) | 1982-09-29 |
| IE820653L (en) | 1982-09-23 |
| DE3265338D1 (en) | 1985-09-19 |
| US4476563A (en) | 1984-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1173549A (en) | Semiconductor laser having at least two radiation beams, and method of manufacturing same | |
| US4378255A (en) | Method for producing integrated semiconductor light emitter | |
| US4594603A (en) | Semiconductor device with disordered active region | |
| US5028563A (en) | Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays | |
| US4309670A (en) | Transverse light emitting electroluminescent devices | |
| US5729563A (en) | Method and apparatus for optically and thermally isolating surface emitting laser diodes | |
| US4099999A (en) | Method of making etched-striped substrate planar laser | |
| Bar-Chaim et al. | GaAs integrated optoelectronics | |
| JPS5925293A (en) | Hetero junction diode laser | |
| CA1128634A (en) | Semiconductor laser structure and manufacture | |
| EP0622876B1 (en) | Vertical cavity laser diode | |
| CA1065460A (en) | Buried-heterostructure diode injection laser | |
| JPS6384186A (en) | Transverse junction stripe laser | |
| US5163064A (en) | Laser diode array and manufacturing method thereof | |
| EP0077825B1 (en) | Method of forming wide bandgap region within multilayer semiconductors | |
| CA1171506A (en) | Semiconductor laser | |
| Van Der Ziel et al. | A closely spaced (50 μm) array of 16 individually addressable buried heterostructure GaAs lasers | |
| CA1241422A (en) | Semiconductor laser | |
| US5346854A (en) | Method of making a semiconductor laser | |
| JPH088486A (en) | Method of manufacturing patterned mirror vcsel by using selective growth | |
| US4943971A (en) | Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays | |
| US4377865A (en) | Semiconductor laser | |
| EP0086008A2 (en) | Semiconductor device for generating at least two radiation beams | |
| US5105234A (en) | Electroluminescent diode having a low capacitance | |
| US4571729A (en) | Semiconductor laser having an inverted layer in a plurality of stepped offset portions |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEC | Expiry (correction) | ||
| MKEX | Expiry |