CA1159161A - Method and apparatus for conducting heat to or from an article being treated under vacuum - Google Patents
Method and apparatus for conducting heat to or from an article being treated under vacuumInfo
- Publication number
- CA1159161A CA1159161A CA000359913A CA359913A CA1159161A CA 1159161 A CA1159161 A CA 1159161A CA 000359913 A CA000359913 A CA 000359913A CA 359913 A CA359913 A CA 359913A CA 1159161 A CA1159161 A CA 1159161A
- Authority
- CA
- Canada
- Prior art keywords
- wafer
- article
- gas
- station
- support member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
APPLICATION FOR UNITED STATES PATENT
METHOD AND APPARATUS FOR CONDUCTING HEAT
TO OR FROM AN ARTICLE BEING TREATED UNDER VACUUM
Abstract of Disclosure A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member.
The method and apparatus are described for use in a semiconductor wafer ion implantation system wherein the wafer is clamped to the support member which is cooled. A seal can be provided between the wafer and the support member adjacent the periphery of the article.
METHOD AND APPARATUS FOR CONDUCTING HEAT
TO OR FROM AN ARTICLE BEING TREATED UNDER VACUUM
Abstract of Disclosure A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member.
The method and apparatus are described for use in a semiconductor wafer ion implantation system wherein the wafer is clamped to the support member which is cooled. A seal can be provided between the wafer and the support member adjacent the periphery of the article.
Description
1 ~5~
16 ¦ Background of the Invention 17¦ In many applications where articles are treated 18 ¦ within a vacuum chamber it is desirable to control the tem-19¦ perature of the article. One such application is ion 20 ¦ implantation of semiconductor wafers wherein a high energy ion21 1 beam is directed onto a semiconductor wafer which also 221 results in heating of the wafer. Heating of the wafer in any 23¦ ion implant pxocess has a number of undesirable effects 241 including damage to the photoresist layer which can out gas 25 ¦ and shrink thereby destroying the desired precise pattern 26¦ intended on the wafer by use of the photoresist. Early 27 implantation systems relied upon heat removal from the silicon 28 wafer by radiation effect only. Absence of gas molecules 29 ~/
~ 15~:l61 1~ in the vacuu~ system such as typically 7 x l0 7 Torr
16 ¦ Background of the Invention 17¦ In many applications where articles are treated 18 ¦ within a vacuum chamber it is desirable to control the tem-19¦ perature of the article. One such application is ion 20 ¦ implantation of semiconductor wafers wherein a high energy ion21 1 beam is directed onto a semiconductor wafer which also 221 results in heating of the wafer. Heating of the wafer in any 23¦ ion implant pxocess has a number of undesirable effects 241 including damage to the photoresist layer which can out gas 25 ¦ and shrink thereby destroying the desired precise pattern 26¦ intended on the wafer by use of the photoresist. Early 27 implantation systems relied upon heat removal from the silicon 28 wafer by radiation effect only. Absence of gas molecules 29 ~/
~ 15~:l61 1~ in the vacuu~ system such as typically 7 x l0 7 Torr
2 virtually eliminates conductive paths for heat flow.
3 As beam powers in ion implantation systems have increased
4¦ radiation cooling alone was no longer sufficient, and there
5~ have been attempts to make intimate contact with the silicon 6I wafer for increased conduction. One method that has been 7~ attempted is the use of a thermally conductive conformat 8 (soft pliable material) pressed mechanically to the back 9~ of the silicon slice hopefully to establish as many point 10¦ contacts between the wafer and conformat for conduction to 11¦ a support member. Although significant temperature depression 12~ has been realized with the use of a conformat,problems of 13~ repeatability, thermal non-uniformity and expensive maintenance 14¦ have been experienced.
15 ¦ Summary of the Invention 16 1 The object of the present invention is a method 17 1 and apparatus which will provide proper thermal conduction 18 ¦ between an article and a support member in a vacuum environment 19 1 and which will overcome the shortcomings of the prior 20 1 techniques.
21 ¦ Briefly stated, the invention to be described in 22 ~ greater detail below is directed to method and apparatus for 23 1 conducting heat between an article being treated and a 24 ¦ mounting member.In accordance with the present invention 5 ¦ a gas under pressure is introduced between the article and 26 ¦ the mounting member and provides sufficient conductivity to 28 ¦ allow temperature control of the wafer.
Conductivity of a gas versus pressure is relatively ~ 1S9~61 1~ flat from approximately 3,000 p9i to 5/760 of an atmosphere 21 at which level conductivlty decays rapidly. Experimentation 3 has shown that gas between a silicon wafer and a flat plate 41 in the pressure range of about 0.5 to ~ Torr has a very low S diffusion rate in-to the void of the vacuum svstem while at 61 the same time providing sufficient thermal conductivity to 7 ~ maintain the temperature of the wafer at appropriate levels.
8 ! In accordance with another aspect of the present 9 invention the wafer is clamped against the support member which both limits the excess flow of gas as well as produces 11 ~ a small path length for thermal conduction.
12 ¦ In accordance with another aspect of the present 13 ~ invention a seal can be provided between the wafer and the 14 ¦ support member adjacent the periphery of the wafer thereby lS further limiting the escape of the gas into the vacuum 16 chamber.
17 ~ Other features and advantages of the present 18 ¦ invention will become more apparent upon a perusal of the 19 ¦ following specification taken in conjunction with the 20 1 accompan~ing drawings wherein similar characters of reference 211 refer to similar structural elements in each of the 221 several views.
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l 159~6 1 1, DESCRIPTIOM OF T~IE DRAWINGS
3 Figure 1 is a schematic bloc:k diagram illustrating 4¦ one application of the present invention.
5l
15 ¦ Summary of the Invention 16 1 The object of the present invention is a method 17 1 and apparatus which will provide proper thermal conduction 18 ¦ between an article and a support member in a vacuum environment 19 1 and which will overcome the shortcomings of the prior 20 1 techniques.
21 ¦ Briefly stated, the invention to be described in 22 ~ greater detail below is directed to method and apparatus for 23 1 conducting heat between an article being treated and a 24 ¦ mounting member.In accordance with the present invention 5 ¦ a gas under pressure is introduced between the article and 26 ¦ the mounting member and provides sufficient conductivity to 28 ¦ allow temperature control of the wafer.
Conductivity of a gas versus pressure is relatively ~ 1S9~61 1~ flat from approximately 3,000 p9i to 5/760 of an atmosphere 21 at which level conductivlty decays rapidly. Experimentation 3 has shown that gas between a silicon wafer and a flat plate 41 in the pressure range of about 0.5 to ~ Torr has a very low S diffusion rate in-to the void of the vacuum svstem while at 61 the same time providing sufficient thermal conductivity to 7 ~ maintain the temperature of the wafer at appropriate levels.
8 ! In accordance with another aspect of the present 9 invention the wafer is clamped against the support member which both limits the excess flow of gas as well as produces 11 ~ a small path length for thermal conduction.
12 ¦ In accordance with another aspect of the present 13 ~ invention a seal can be provided between the wafer and the 14 ¦ support member adjacent the periphery of the wafer thereby lS further limiting the escape of the gas into the vacuum 16 chamber.
17 ~ Other features and advantages of the present 18 ¦ invention will become more apparent upon a perusal of the 19 ¦ following specification taken in conjunction with the 20 1 accompan~ing drawings wherein similar characters of reference 211 refer to similar structural elements in each of the 221 several views.
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l 159~6 1 1, DESCRIPTIOM OF T~IE DRAWINGS
3 Figure 1 is a schematic bloc:k diagram illustrating 4¦ one application of the present invention.
5l
6 I Figure 2 is a schematic plan view of an ion
7 I implantation system incorporating the present
8 invention.
9 l
10 ¦ Figure 3 is a schematic elevational sectional
11 ¦ view of a portion of the structure shown in
12 I Figure 2 taken along line 3-3 in the direction
13 ¦ of the arrows.
14 l
15 ¦ Figure 4 is a schematic elevational view, partially broken
16 ¦ away, illustrating a portion of the structure shown
17 ¦ in Figure 3.
18 l
19 ¦ Figure 5 is a graph showing thermal conductance
20 ¦ plotted versus gas pressure for nitrogen gas.
21 l
22~ Figure 6 is a graph of temperature plotted versus 231 ion beam power showing for the temperature of a 24~ silicon wafer in an ion implantation system both 251 for an uncooled wafer and a wafer cooled in 26~ accordance with the present invention with nitrogen 228 gas at two different pressure levels.
~ 1591~i1 1 Description of -the Preferred Embodiments il 2 1I While the present invention is applicable 3 to provide thermal conductivity for controlling the 4 1I temperature of an article in a vacuum for numerous 5~ possible applications, it is especially applicable for 6I cooling a semiconductor wafer in an ion implantation 7 I system. Accordingly the invention will be described 8 below with respect to such an ion implantation system.
9~ Referring now to the drawings particularly with 10 ~ reference to Figures 1 and 2 there is schematically 11 ~ illustrated an ion implantation system wherein ions from a 12 ¦ source 11 connected to a high voltage power supplv 12 are 13 ~ generated for projection through an accelerator column 14 ¦ 13 along a beam line 14 to an end station 15 wherein the 15 ¦ ions are directed against a semiconductor wafer. The 16 ¦ source ll,column 13,beam line 14,and end station 15 17 ¦ contained within a vacuum envelope 17 are maintained under 18 ¦ high vacuum by vacuum pumping devices 16. The ion 19 ¦ implantation system is typically operated at about the 20 ¦ level 7 x 10 7 Torr when the ion beam is directed against 21 ¦ the wafer.
22~ Figure 2 better illustrates the elements of the
~ 1591~i1 1 Description of -the Preferred Embodiments il 2 1I While the present invention is applicable 3 to provide thermal conductivity for controlling the 4 1I temperature of an article in a vacuum for numerous 5~ possible applications, it is especially applicable for 6I cooling a semiconductor wafer in an ion implantation 7 I system. Accordingly the invention will be described 8 below with respect to such an ion implantation system.
9~ Referring now to the drawings particularly with 10 ~ reference to Figures 1 and 2 there is schematically 11 ~ illustrated an ion implantation system wherein ions from a 12 ¦ source 11 connected to a high voltage power supplv 12 are 13 ~ generated for projection through an accelerator column 14 ¦ 13 along a beam line 14 to an end station 15 wherein the 15 ¦ ions are directed against a semiconductor wafer. The 16 ¦ source ll,column 13,beam line 14,and end station 15 17 ¦ contained within a vacuum envelope 17 are maintained under 18 ¦ high vacuum by vacuum pumping devices 16. The ion 19 ¦ implantation system is typically operated at about the 20 ¦ level 7 x 10 7 Torr when the ion beam is directed against 21 ¦ the wafer.
22~ Figure 2 better illustrates the elements of the
23~ ion implantation system. Ions from the source 11 are 241 redirected by an analysing magnet 21 before being directed 25 ¦ through the accelerator column 13 and after which pass 26¦ through a triplet quadruple lens 22 and scanners 23. At 27¦ the end station 15 wafers 24 from an lnput cassette 25 28¦ are directed ~o an inlet station 26 through a vacuum 291 lock 27 and into the high vacuum cha~ber 17 to the 301 treating station 28 where the wafer 24 is exposed to the 31¦ ion beam. From the treating station the wafer passes l 1 5 ~
1 1 through a vacuum loc~ 29 to an output cassette 31 at the 2 ll outlet station 32.
3I Figure 3 schematically illustrates the structure 4 ll and movement of the wafer from the input cassette 25 to 5 ¦ the output cassette 31. As shown in Figure 3 the wafer 6~ fxom cassette 25 passes through a first gate valve 33 to a 7 I wafer stop 34 at which time the gate valve 33 is closed and 8 the vacuum lock 27 reduced to an intermediate vacuum 9 pressure. Then a second gate valve 35 is opened and the wafer fed by gravity onto a target block or support plate 11 or member 36 at a stop 40 at the treating station 28. Typicall 12 the wafer is clamped to the target block 36 which is then 13 tilted by a swing arm 37 for application of the appropriate 14 ¦ ion dosage. The target block 36 is then swung down so that 15 ¦ the wafer is released from the clamp and moves by gravity on 16 through the third open gate valve 38 to a stop 39 in vacuum 17 ¦ lock 29. Gate valve 38 is then closed and a fourth gate 18 ¦ valve 41 opened whereby the wafer is fed by gravity to the out-19 ¦ put cassette 31.
20 ¦ Figure 4 schematically illustrates the positioning 21 ~ and clamping of the wa~er 24 on the target block 36 which 22 1 may be cooled via a cooling system such as freon circulated 22341 through internal passageways 36" from a coolant recirculation l system 42. The wafer 24 is clamped to the target block 36 251 by a clamp 43 that is centrally apertured at 43' to pass the 26¦ ion beam and that engages the wafer 24 adjacent its periphery.
27 ¦ Gas under pressure of about 0.5 to 2.0 Torr is fed 281 through a channel 36' to tne interface between the wafer 24 291 and the target block 36 and provides the thermal conduct-30~ ivity for transferring heat from the waer to the cooled 32 arget block. ~ gas with a high thermal conductivity 1I such as ni~rogen, neon, helium or hydrogen~
2l1 (which are arranged in ascending order of conductivity at 3l 360K) is directed from a source 44 through a regulator 45 4l and leak valve 46 to the channel 36'. It has been found 5 lll that an opening at the end of the chanel 36' of approximately 61 10 to 20 thousanths inch diameter is sufficient to provide 7l the appropriate gas for maintaining a 3" wafer 24 at the 8~ desired temperature.
9 ¦ Figure 5 shows a graph of thermal conductance 10 ~ plotted versus gas pressure for nitrogen. It will be 11 ¦ seen that the thermal conducti~ity remains high to 12 1 approximately 5 Torr where it begins to fall off 13 ~ dramatically. Use of gas in the range of 0.5 to 2.0 14¦ Torr provides the appropriate thermal conductivity for 15 1 conducting heat away from the wafer. Figure 6 shows 16 ¦ a graph plotting temperature of a wafer against ion 17 ¦ beam power and shows the effectiveness of the use of 18 ¦ nitrogen gas at 0.8 Torr and 1.5 ~orr.
19¦ While it has not been found necessary for 20¦ successful utilization of the present invention,a seal 21 can be provided between the wafer 24 and the target block 22 1 36 adjacent the periphery wafer 24 by an "O" ring 47.
23 j It will be appreciated by those skilled in 241 the art that selection of the particular operating gas 251 and pressure will depend upon the efficiency and nature 26~ of the particular system operation.
271 Additionally it will be appreciated by those 28 ¦ skilled in the art that this invention can be utilized 30~ //
11S~161 l for temperature control of wafers in other treating 2~l processes. A typical applicable process would be 3 plasma etching of semiconductor wafers in a planer 4l etching system, well known in the art and ion beam 5 1l milling and electron beam annealing.
6 Other modifications and alternative 7 I configurations can be utilized in accordance with the 8 present invention which is limited only by the scope 9 of the appended claims.
1 1 through a vacuum loc~ 29 to an output cassette 31 at the 2 ll outlet station 32.
3I Figure 3 schematically illustrates the structure 4 ll and movement of the wafer from the input cassette 25 to 5 ¦ the output cassette 31. As shown in Figure 3 the wafer 6~ fxom cassette 25 passes through a first gate valve 33 to a 7 I wafer stop 34 at which time the gate valve 33 is closed and 8 the vacuum lock 27 reduced to an intermediate vacuum 9 pressure. Then a second gate valve 35 is opened and the wafer fed by gravity onto a target block or support plate 11 or member 36 at a stop 40 at the treating station 28. Typicall 12 the wafer is clamped to the target block 36 which is then 13 tilted by a swing arm 37 for application of the appropriate 14 ¦ ion dosage. The target block 36 is then swung down so that 15 ¦ the wafer is released from the clamp and moves by gravity on 16 through the third open gate valve 38 to a stop 39 in vacuum 17 ¦ lock 29. Gate valve 38 is then closed and a fourth gate 18 ¦ valve 41 opened whereby the wafer is fed by gravity to the out-19 ¦ put cassette 31.
20 ¦ Figure 4 schematically illustrates the positioning 21 ~ and clamping of the wa~er 24 on the target block 36 which 22 1 may be cooled via a cooling system such as freon circulated 22341 through internal passageways 36" from a coolant recirculation l system 42. The wafer 24 is clamped to the target block 36 251 by a clamp 43 that is centrally apertured at 43' to pass the 26¦ ion beam and that engages the wafer 24 adjacent its periphery.
27 ¦ Gas under pressure of about 0.5 to 2.0 Torr is fed 281 through a channel 36' to tne interface between the wafer 24 291 and the target block 36 and provides the thermal conduct-30~ ivity for transferring heat from the waer to the cooled 32 arget block. ~ gas with a high thermal conductivity 1I such as ni~rogen, neon, helium or hydrogen~
2l1 (which are arranged in ascending order of conductivity at 3l 360K) is directed from a source 44 through a regulator 45 4l and leak valve 46 to the channel 36'. It has been found 5 lll that an opening at the end of the chanel 36' of approximately 61 10 to 20 thousanths inch diameter is sufficient to provide 7l the appropriate gas for maintaining a 3" wafer 24 at the 8~ desired temperature.
9 ¦ Figure 5 shows a graph of thermal conductance 10 ~ plotted versus gas pressure for nitrogen. It will be 11 ¦ seen that the thermal conducti~ity remains high to 12 1 approximately 5 Torr where it begins to fall off 13 ~ dramatically. Use of gas in the range of 0.5 to 2.0 14¦ Torr provides the appropriate thermal conductivity for 15 1 conducting heat away from the wafer. Figure 6 shows 16 ¦ a graph plotting temperature of a wafer against ion 17 ¦ beam power and shows the effectiveness of the use of 18 ¦ nitrogen gas at 0.8 Torr and 1.5 ~orr.
19¦ While it has not been found necessary for 20¦ successful utilization of the present invention,a seal 21 can be provided between the wafer 24 and the target block 22 1 36 adjacent the periphery wafer 24 by an "O" ring 47.
23 j It will be appreciated by those skilled in 241 the art that selection of the particular operating gas 251 and pressure will depend upon the efficiency and nature 26~ of the particular system operation.
271 Additionally it will be appreciated by those 28 ¦ skilled in the art that this invention can be utilized 30~ //
11S~161 l for temperature control of wafers in other treating 2~l processes. A typical applicable process would be 3 plasma etching of semiconductor wafers in a planer 4l etching system, well known in the art and ion beam 5 1l milling and electron beam annealing.
6 Other modifications and alternative 7 I configurations can be utilized in accordance with the 8 present invention which is limited only by the scope 9 of the appended claims.
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Claims (16)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. The method of treating an article in a vacuum chamber comprising the steps of positioning the article on a support plate at a treating station and providing a gas between the article and the support plate to conduct heat between the article and the support plate.
2. The method of claim 1 including the step of clamping the article to the support plate over an orifice for directing the gas between the article and the support plate.
3. The method of claim 1 including the step of sealing the article to the support plate adjacent the periphery of the article.
4. The method of claim 1 wherein the gas is provided between the article and the support plate at a pressure of about 0.5 to 2.0 Torr.
S. The method of claim 1 wherein the said article is a semiconductor wafer and including the steps of directing an ion beam on the wafer at the treatment station for ion implantation into the wafer and wherein the wafer being treated is established in thermal contact with the support plate by the gas.
6. The method of claims 1 or 5 including the state of cooling the support plate whereby the wafer being treated is cooled by heat conduction from the wafer through the gas to the support plate being cooled.
7. In an apparatus for handling and treating substantially flat articles under vacuum comprising a vacuum chamber, an inlet station, a treating station, an outlet station and a mounting member having a substantially flat mounting surface on which the article is positioned at the treating station the improvement for controlling the temperature of the article comprising:
means for maintaining a surface of the article in contact with said mounting surface, and means for introducing a gas under pressure between the article and the mounting member for conducting heat between the article and the mounting member.
means for maintaining a surface of the article in contact with said mounting surface, and means for introducing a gas under pressure between the article and the mounting member for conducting heat between the article and the mounting member.
8. The improvement of claim 7 wherein the pressure of said gas is between 0.5 and 2.0 Torr.
9. The improvement of claim 7 including means for sealing the article to the mounting member adjacent the periphery of the article.
10. The improvement of claim 7 including means for clamping the article to the mounting member over an inlet for the gas under pressure.
11. The improvement of claim 7 wherein said article is a semiconductor wafer and including means for directing an ion beam on the wafer at the treatment station for ion implantation into the wafer wherein the wafer being treated is established in thermal contact with the support member by the gas.
12. The improvement of claims 7 or 11 including the means for cooling the support member whereby the wafer being treated is cooled by heat conduction from the wafer through the gas to the cooled support member.
13. The improvement of claims 7 including means for adjusting the pressure of said gas.
14. Apparatus for treating semiconductor wafers comprising;
a vacuum chamber, inlet station means for receiving wafers and inserting the wafers into the vacuum chamber, a treating station within the vacuum chamber including a support member for the wafers and means for clamping the wafer to said support member, said support member including a substantially flat surface engageable by a surface of said wafer, means for moving the wafers from the inlet station to the treating station, means for generating and directing an ion beam onto wafers at the treating station, means for introducing a gas under pressure between the wafer and said support member for conducting heat between the wafer and said support member, an outlet station means for conveying the wafers out of the vacuum chamber, and means for moving the wafers from the said treating station to said outlet station means.
a vacuum chamber, inlet station means for receiving wafers and inserting the wafers into the vacuum chamber, a treating station within the vacuum chamber including a support member for the wafers and means for clamping the wafer to said support member, said support member including a substantially flat surface engageable by a surface of said wafer, means for moving the wafers from the inlet station to the treating station, means for generating and directing an ion beam onto wafers at the treating station, means for introducing a gas under pressure between the wafer and said support member for conducting heat between the wafer and said support member, an outlet station means for conveying the wafers out of the vacuum chamber, and means for moving the wafers from the said treating station to said outlet station means.
15. The apparatus of claim 14 including means for cooling said support member whereby the wafer being treated is cooled by heat conduction from the wafer through the gas to said support member.
16. The apparatus of claim 14 including means for adjusting the pressure of said gas.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/075,401 US4261762A (en) | 1979-09-14 | 1979-09-14 | Method for conducting heat to or from an article being treated under vacuum |
| US75,401 | 1979-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1159161A true CA1159161A (en) | 1983-12-20 |
Family
ID=22125486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000359913A Expired CA1159161A (en) | 1979-09-14 | 1980-09-09 | Method and apparatus for conducting heat to or from an article being treated under vacuum |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4261762A (en) |
| EP (1) | EP0025670B2 (en) |
| JP (1) | JPS5648132A (en) |
| CA (1) | CA1159161A (en) |
| DE (1) | DE3066291D1 (en) |
Families Citing this family (107)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0017472A1 (en) * | 1979-04-06 | 1980-10-15 | Lintott Engineering Limited | Evacuable equipment containing a device for heat transfer and process for the manufacture of semi-conductor components using this equipment |
| US4756815A (en) * | 1979-12-21 | 1988-07-12 | Varian Associates, Inc. | Wafer coating system |
| US5024747A (en) * | 1979-12-21 | 1991-06-18 | Varian Associates, Inc. | Wafer coating system |
| US4909314A (en) * | 1979-12-21 | 1990-03-20 | Varian Associates, Inc. | Apparatus for thermal treatment of a wafer in an evacuated environment |
| US4385937A (en) * | 1980-05-20 | 1983-05-31 | Tokyo Shibaura Denki Kabushiki Kaisha | Regrowing selectively formed ion amorphosized regions by thermal gradient |
| DE3069702D1 (en) * | 1980-08-08 | 1985-01-10 | Battelle Development Corp | Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus |
| DE3118785A1 (en) * | 1981-05-12 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | METHOD AND DEVICE FOR DOPING SEMICONDUCTOR MATERIAL |
| US4433247A (en) * | 1981-09-28 | 1984-02-21 | Varian Associates, Inc. | Beam sharing method and apparatus for ion implantation |
| US4392938A (en) * | 1981-11-12 | 1983-07-12 | Varian Associates, Inc. | Radio frequency etch table with biased extension member |
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-
1979
- 1979-09-14 US US06/075,401 patent/US4261762A/en not_active Expired - Lifetime
-
1980
- 1980-09-04 EP EP80303093A patent/EP0025670B2/en not_active Expired
- 1980-09-04 DE DE8080303093T patent/DE3066291D1/en not_active Expired
- 1980-09-09 CA CA000359913A patent/CA1159161A/en not_active Expired
- 1980-09-16 JP JP12735680A patent/JPS5648132A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5648132A (en) | 1981-05-01 |
| EP0025670B2 (en) | 1989-04-05 |
| JPH0227778B2 (en) | 1990-06-19 |
| EP0025670A1 (en) | 1981-03-25 |
| DE3066291D1 (en) | 1984-03-01 |
| EP0025670B1 (en) | 1984-01-25 |
| US4261762A (en) | 1981-04-14 |
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