CA1143867A - Process for manufacturing a semiconductor device - Google Patents
Process for manufacturing a semiconductor deviceInfo
- Publication number
- CA1143867A CA1143867A CA000366877A CA366877A CA1143867A CA 1143867 A CA1143867 A CA 1143867A CA 000366877 A CA000366877 A CA 000366877A CA 366877 A CA366877 A CA 366877A CA 1143867 A CA1143867 A CA 1143867A
- Authority
- CA
- Canada
- Prior art keywords
- wafer
- light
- semiconductor device
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Abstract
ABSTRACT OF THE DISCLOSURE
A process of manufacturing a semiconductor device having the steps of implanting impurity ions to a surface of a semiconductor substrate; and radiating the substrate with incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.
A process of manufacturing a semiconductor device having the steps of implanting impurity ions to a surface of a semiconductor substrate; and radiating the substrate with incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.
Description
BACKGROU~ID OF THE_INVENTION
Field of the Invention . . .
The present invention relates generally to a process for manufacturing a semiconductor device and is directed more particularly to a process for manufacturing a semiconductor device in which a semiconductor substrate implanted with ions is annealed in a short period of time to form an electrically activ~ted region thereon.
Description of the Prior Art . . _ _ A prior art technique, in which the crystal - defects in an ion implanted region is restored to electri-cally activate the implanted atoms or ions, is typically an annealing method using an electrical furnace.
This prior art method is such one that a number of semi-conductor substrates implanted with ions are set on a quartz board or the like and then the~ are sub~ected to the heating process within an electrical furnace at, for example, 800 to 1200C in more than 10 minutes to pro~ide an electrically activated region in each of the substrates.
This method is productive in view of the fact that a number of substrates can be processed at the same time, but defective in view o~ the fact that since ~ the substrates to be annealed have large thermal capacity,-
Field of the Invention . . .
The present invention relates generally to a process for manufacturing a semiconductor device and is directed more particularly to a process for manufacturing a semiconductor device in which a semiconductor substrate implanted with ions is annealed in a short period of time to form an electrically activ~ted region thereon.
Description of the Prior Art . . _ _ A prior art technique, in which the crystal - defects in an ion implanted region is restored to electri-cally activate the implanted atoms or ions, is typically an annealing method using an electrical furnace.
This prior art method is such one that a number of semi-conductor substrates implanted with ions are set on a quartz board or the like and then the~ are sub~ected to the heating process within an electrical furnace at, for example, 800 to 1200C in more than 10 minutes to pro~ide an electrically activated region in each of the substrates.
This method is productive in view of the fact that a number of substrates can be processed at the same time, but defective in view o~ the fact that since ~ the substrates to be annealed have large thermal capacity,-
- 2 -. ~ ~ J
, r
, r
3~67 nonuniformity is generated in electrieally activated l~yers which are provided i.n short period of heating.
Further, even in the case where the control-lability of the profile of an ion implanted region is attempted to be utilized in makin~ a semiconductor element, redistribution phenomenon is generated i.n the ion implan-tation profile by -the prior art long time heating.
As a result, the advantage of t:he ion implantation is damaged.
Further, upon manufaeturing a semiconductor device thermally unstable such as GaAs compound semieonductor atoms such as Ga, As forming the subs-trate are vaporized in long time heatincJ at hicJh temperature -to form a thermal eonversion layer on the surfaee of the substrate whieh damages the electrical activation of the ion implanted region.
Reeently, as a new annealing proeessing method for an ion implantation region, a laser anneal method, for example, is studied which can electrically activate an ion implanted region in very short period of time ~ano second to miero second). ~he meehanism thereof is considered that a semiconduetor substrate abosorbs the energy of laser light and converts the same to the heat energy to aehieve the annealing process for the substrate. In this case, however, the light absorp-tion coefficient of the semiconductor substrate mueh depends on the wave length of the laser llght and also on the crystal property of the semiconductor substrate (varied in response to the amount of implanted ions~, which requires that the laser output must be ehanged in aeeor-dance with semiconduetor substrates to be annealed.
~43i3~7 Further, when a laser li.ght is radiated on a multi-layer structure such as SiO2 - Si structure, poly-crystalline Si - Si structure and so on to anneal the same, there are the reflec-tion of the laser light on, for example, the surface of Si and an interference effec-t determined by the wave length of the laser light, the thickness of a sio2 layer on Si and so on. IIence, the laser output in anneal must be different.
According to the present anneal by the laser light, a laser beam focussed with several 10 ~m scans a semiconductor substrate with two dimension to anneal it uniformly. Howevex, no uniform anneal is achieved due to the fluctuation, flicker or the like of the l.aser light.
If a semiconductor substrated can be radiated by laser with a large spot, this case, however, re~uires a ver~ intensive laser output.
OBJECTS AND SUr~i~ARY OF TI-IE INVENTION
Accordingly, an object of the present invention is to provide a novel process for manufacturing a semiconductor device.
Another object of the invention is to provide a process for manufacturing a semiconductor device using a new anneal method by an incoherent light radiation to activate an ion implanted region.
~ Eurther object of the invention is to provide a process for manufacturin.g a semiconductor device in which ions are implanted to the surface of a semiconductor substrate and then incoherent light from a lamp is radiated on the ion implanted semiconductor surface to anneal the surface to thereby activa~e the ion implanted region. ~ wide scope of :Light enables the annealing without the necess.ity of beam scanning.
A further object of the invention is to provide a process of manufacturing a semiconductor device using the anneal by the radiation of incoherent light by which the ion implan-ted region can be electrically activated in a shorter period of time by two ~igures (10) 2) as com-pared with the anneal using the electrical furnace and hence the problems caused by a long time anneal can be avoided.
According to an aspect of the present invention, there is provided a process of manufacturing a semiconductor device which comprises the steps of:
a) implanting impurity ions to a surface of a semiconductor substrate; and b) radiating incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.
The other objects, features and advantages of the present invention will become apparent from the following description taken in conjuncti.on with the accompany-ing drawings.
BRIEF DESCRIPTION OF THE DRA~IINGS
Fig. 1 is a cross-sectional view showing an : example of the heating apparatus of a uniform radiation type which uses mirrors each having a paraboloidal reflect-ing surface and is useable for carrying out the process according to the present invention;
Fig. 2 is a graph showing the temperature to radiation characteristic of a semiconductor wafer by the heating apparatus shown in Fig. l;
, . : , ' :
3l~i7 ~ig. 3 is a graph showing the relation between the time oE the x~a~xxa~ radiation on a semi-conductor wafer and the sheet resistance thereof;
Fig. 4 is a graph showing the boron con-centration proEile of a (111) surface semiconductor wafer;
and Fig. 5 is a graph showing the carrier con-centration profile of a semiconductor wafer in which the thermal conversion appears.
DESCRI~TION OF THE PREFERRED E~BODIMENTS
_ The present invention will be hereina~ter described with reference to examples and the attached drawings.
Fig. 1 shows in cross-section a heating apparatus of incoherent light radiation in which paraboloidal reflecting mirrors are used. In Fig. 1, 1 designates a semiconductor wafer to the surface of which ions are im-plantedf 2 a ring-shaped suspender made of quartz and - supporting the semiconductor wafer 1 through, for example, 20 ~ ~-ur thin projections 2a so as for only the wafer 1 to be effectively heated. Two wafers 1 may be superimposed with their front or back surfaces contact with each other and then supported by the suspender 2. The suspender 2 supporting the wafer 1 is housed in a quartz tube 3 having the cross-section of a rectangular shape. A
plurality of suspenders 2 may be disposed in the quartz tube 3. In the figure, 4 designa-tes a radiation lamp made of, for example, tungsten-halogen lamp which will radiate a visual and infrared light with the wave lengths of 0.4 to ~ ~m and 5 a mirror having a paraboloidal .
43~7 reflecting sur~ace. ~ pair of sets of lamp ~ and reflect-ing mirror 5 are 1ocated above and below the quartz tube 3 along the longer sides of the quartz tube 3. In this case, for example, four sets of the lamp 4 and mirror 5 are located ,5 each o~ upper and lower sides of the quartz tube 3 and each set of lamps 4 above and bslow the quartz tube 3 are comp].e-mentarily displaced so as to uniformly radiate the substrate.
Upon the practical use of the above heating apparatus, the semiconductor wafer 1 which is supported by the suspender 2 is disposed in the quartz tube 3 and N2 gas is introduced into the quartz tube 3 at the flow rate of 2 Q/min to avoid the oxidization of the semiconductor wafer 1. In this case, the light absorption coefficient of quartz is low. Therefore, in this heating apparatus, the heating for the wafer 1 is not carried out by the radiation from the quartz tube as in the ordinary electrical furnace, so that contamination by sodium ions or the like is diminished.
According to the heating apparatus shown in Fig. 1, the semlconductor wafer 1 can be heated rapidly or at high rate unlike -the thermal conduction from a suspender of large thermal capacity ~s in the prior art electrical furnace.
As will be apparent from the graph of Fig. 2 showing the temperature rising of the above heating apparatusr the temperature on the wafer 1 arrives at 1200C
within about 6 seconds from the start of light radiation.
In the case of the graph of Fig. 2, the input power is 20 Wcm and emissivity is 0.5, and in the graph of Fig. 2, black dots represent experimental values and the line shows a theoretical value, respectively. Therefore, in this case, ~3~ 7 it is sufficient -that the r~diation -time within ~hich light is radiated within about 10 seconds and tha-t the temperature can be determined by the radiation time period of light. Thus, it becomes unnecessary to control the temperature by using a thermo couple in this case.
Further, according to the above heating apparatus, only the wafer 1 is heated so that the sheet resistance thereof is uniform and warp is smallin the wafer 1.
In addition to the above heating apparatus, such a heating apparatus may be used for carrying out the process of the invention in which a semiconductor wafer con-tinuously moves through the radiating area a1-ongan air-cushioned o~1~ itrack /hea-ting apparatus is provided integral with an ion implant-ing apparatus such that ions are implanted to a semiconductor wafer and thereafter the wafer is annealed in the same chamber.
Further, in place of the mirror with the paraboloi,dal reflect-ing surface, a mirror with an ellipsoidal reflecting surface may be used to focus the light.
The anneal time by -the heating apparatus is about several seconds, so that the ion implanted region -can be electically ac-tivated without r,edistribution and a shallower junction can be formed.
When a semiconductor device such as a GaAs compound semiconductor device which lS thermally unstable is manufactured, its ion implanted region can be activated in a short time period by the light radiation anneal.
Thus, in this case, the vaporization of Ga or As~or the diffusion of Cr can be suppressed, hence the generation of thermal conversion laver is avoided and the profile of ~3~ 7 impurity by the ion iMplant~tion is not damaged.
Further, when the anneal by the ineoherent light radiation aecording -to the present invention is applied to a multi-layer semiconcluetor wafer sueh as Si - SiO2 strueture Si - polyerystalline Si structure or the like, sinee -the wave ~un~sten~
length of th~alogen lamp light is in the range of 0.4 to
Further, even in the case where the control-lability of the profile of an ion implanted region is attempted to be utilized in makin~ a semiconductor element, redistribution phenomenon is generated i.n the ion implan-tation profile by -the prior art long time heating.
As a result, the advantage of t:he ion implantation is damaged.
Further, upon manufaeturing a semiconductor device thermally unstable such as GaAs compound semieonductor atoms such as Ga, As forming the subs-trate are vaporized in long time heatincJ at hicJh temperature -to form a thermal eonversion layer on the surfaee of the substrate whieh damages the electrical activation of the ion implanted region.
Reeently, as a new annealing proeessing method for an ion implantation region, a laser anneal method, for example, is studied which can electrically activate an ion implanted region in very short period of time ~ano second to miero second). ~he meehanism thereof is considered that a semiconduetor substrate abosorbs the energy of laser light and converts the same to the heat energy to aehieve the annealing process for the substrate. In this case, however, the light absorp-tion coefficient of the semiconductor substrate mueh depends on the wave length of the laser llght and also on the crystal property of the semiconductor substrate (varied in response to the amount of implanted ions~, which requires that the laser output must be ehanged in aeeor-dance with semiconduetor substrates to be annealed.
~43i3~7 Further, when a laser li.ght is radiated on a multi-layer structure such as SiO2 - Si structure, poly-crystalline Si - Si structure and so on to anneal the same, there are the reflec-tion of the laser light on, for example, the surface of Si and an interference effec-t determined by the wave length of the laser light, the thickness of a sio2 layer on Si and so on. IIence, the laser output in anneal must be different.
According to the present anneal by the laser light, a laser beam focussed with several 10 ~m scans a semiconductor substrate with two dimension to anneal it uniformly. Howevex, no uniform anneal is achieved due to the fluctuation, flicker or the like of the l.aser light.
If a semiconductor substrated can be radiated by laser with a large spot, this case, however, re~uires a ver~ intensive laser output.
OBJECTS AND SUr~i~ARY OF TI-IE INVENTION
Accordingly, an object of the present invention is to provide a novel process for manufacturing a semiconductor device.
Another object of the invention is to provide a process for manufacturing a semiconductor device using a new anneal method by an incoherent light radiation to activate an ion implanted region.
~ Eurther object of the invention is to provide a process for manufacturin.g a semiconductor device in which ions are implanted to the surface of a semiconductor substrate and then incoherent light from a lamp is radiated on the ion implanted semiconductor surface to anneal the surface to thereby activa~e the ion implanted region. ~ wide scope of :Light enables the annealing without the necess.ity of beam scanning.
A further object of the invention is to provide a process of manufacturing a semiconductor device using the anneal by the radiation of incoherent light by which the ion implan-ted region can be electrically activated in a shorter period of time by two ~igures (10) 2) as com-pared with the anneal using the electrical furnace and hence the problems caused by a long time anneal can be avoided.
According to an aspect of the present invention, there is provided a process of manufacturing a semiconductor device which comprises the steps of:
a) implanting impurity ions to a surface of a semiconductor substrate; and b) radiating incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.
The other objects, features and advantages of the present invention will become apparent from the following description taken in conjuncti.on with the accompany-ing drawings.
BRIEF DESCRIPTION OF THE DRA~IINGS
Fig. 1 is a cross-sectional view showing an : example of the heating apparatus of a uniform radiation type which uses mirrors each having a paraboloidal reflect-ing surface and is useable for carrying out the process according to the present invention;
Fig. 2 is a graph showing the temperature to radiation characteristic of a semiconductor wafer by the heating apparatus shown in Fig. l;
, . : , ' :
3l~i7 ~ig. 3 is a graph showing the relation between the time oE the x~a~xxa~ radiation on a semi-conductor wafer and the sheet resistance thereof;
Fig. 4 is a graph showing the boron con-centration proEile of a (111) surface semiconductor wafer;
and Fig. 5 is a graph showing the carrier con-centration profile of a semiconductor wafer in which the thermal conversion appears.
DESCRI~TION OF THE PREFERRED E~BODIMENTS
_ The present invention will be hereina~ter described with reference to examples and the attached drawings.
Fig. 1 shows in cross-section a heating apparatus of incoherent light radiation in which paraboloidal reflecting mirrors are used. In Fig. 1, 1 designates a semiconductor wafer to the surface of which ions are im-plantedf 2 a ring-shaped suspender made of quartz and - supporting the semiconductor wafer 1 through, for example, 20 ~ ~-ur thin projections 2a so as for only the wafer 1 to be effectively heated. Two wafers 1 may be superimposed with their front or back surfaces contact with each other and then supported by the suspender 2. The suspender 2 supporting the wafer 1 is housed in a quartz tube 3 having the cross-section of a rectangular shape. A
plurality of suspenders 2 may be disposed in the quartz tube 3. In the figure, 4 designa-tes a radiation lamp made of, for example, tungsten-halogen lamp which will radiate a visual and infrared light with the wave lengths of 0.4 to ~ ~m and 5 a mirror having a paraboloidal .
43~7 reflecting sur~ace. ~ pair of sets of lamp ~ and reflect-ing mirror 5 are 1ocated above and below the quartz tube 3 along the longer sides of the quartz tube 3. In this case, for example, four sets of the lamp 4 and mirror 5 are located ,5 each o~ upper and lower sides of the quartz tube 3 and each set of lamps 4 above and bslow the quartz tube 3 are comp].e-mentarily displaced so as to uniformly radiate the substrate.
Upon the practical use of the above heating apparatus, the semiconductor wafer 1 which is supported by the suspender 2 is disposed in the quartz tube 3 and N2 gas is introduced into the quartz tube 3 at the flow rate of 2 Q/min to avoid the oxidization of the semiconductor wafer 1. In this case, the light absorption coefficient of quartz is low. Therefore, in this heating apparatus, the heating for the wafer 1 is not carried out by the radiation from the quartz tube as in the ordinary electrical furnace, so that contamination by sodium ions or the like is diminished.
According to the heating apparatus shown in Fig. 1, the semlconductor wafer 1 can be heated rapidly or at high rate unlike -the thermal conduction from a suspender of large thermal capacity ~s in the prior art electrical furnace.
As will be apparent from the graph of Fig. 2 showing the temperature rising of the above heating apparatusr the temperature on the wafer 1 arrives at 1200C
within about 6 seconds from the start of light radiation.
In the case of the graph of Fig. 2, the input power is 20 Wcm and emissivity is 0.5, and in the graph of Fig. 2, black dots represent experimental values and the line shows a theoretical value, respectively. Therefore, in this case, ~3~ 7 it is sufficient -that the r~diation -time within ~hich light is radiated within about 10 seconds and tha-t the temperature can be determined by the radiation time period of light. Thus, it becomes unnecessary to control the temperature by using a thermo couple in this case.
Further, according to the above heating apparatus, only the wafer 1 is heated so that the sheet resistance thereof is uniform and warp is smallin the wafer 1.
In addition to the above heating apparatus, such a heating apparatus may be used for carrying out the process of the invention in which a semiconductor wafer con-tinuously moves through the radiating area a1-ongan air-cushioned o~1~ itrack /hea-ting apparatus is provided integral with an ion implant-ing apparatus such that ions are implanted to a semiconductor wafer and thereafter the wafer is annealed in the same chamber.
Further, in place of the mirror with the paraboloi,dal reflect-ing surface, a mirror with an ellipsoidal reflecting surface may be used to focus the light.
The anneal time by -the heating apparatus is about several seconds, so that the ion implanted region -can be electically ac-tivated without r,edistribution and a shallower junction can be formed.
When a semiconductor device such as a GaAs compound semiconductor device which lS thermally unstable is manufactured, its ion implanted region can be activated in a short time period by the light radiation anneal.
Thus, in this case, the vaporization of Ga or As~or the diffusion of Cr can be suppressed, hence the generation of thermal conversion laver is avoided and the profile of ~3~ 7 impurity by the ion iMplant~tion is not damaged.
Further, when the anneal by the ineoherent light radiation aecording -to the present invention is applied to a multi-layer semiconcluetor wafer sueh as Si - SiO2 strueture Si - polyerystalline Si structure or the like, sinee -the wave ~un~sten~
length of th~alogen lamp light is in the range of 0.4 to
4 ~m, the wave interference effeet, whieh eauses a problem in the laser anneal, can be neglected.
Experimental Example 1 To the surfaees (100), (111) of Czochralski crystal wafer of Si in the N-type, implanted are B ions with the energy of 200 KeV and the dose amount of 10 em ~n~ e ~
Then , this wafer is radiated by the'halogen lamp light using the heating apparatus shown in Fig; 1 with ~he lamp input of 35 W cm 2.
Fig. 3 is a graph showing the relation of the light radiation -time to the sheet resis-tance of the wafer surfaee. In the graph of Fig. 3, the black dots show the wafer with the (100) surface and the resistivity of 40 to 80 Qcm and the black triangules show the wafer with the (111) surface and the resistivity of 60 to 80 Qcm, respeetively.
~ccording to the electrical furnaee annealing, for example, at 1100C and for 15 minutes , the sheet resistanee of a semieonduetor wafer is about 80 Q/a (Qhm per unit area).
Therefore, it will be understood that, aecording to the above example of the invention, a semieonduetor wafer having the charaeteristic similar to that of the prior art can be pro-duced by the radiation of light for about 6 seconds.
Fig. 4 is a graph showing the concentration profile of boron in the (111) surface a semiconductor wafer.
In the graph of Fig. 4, the solid line represents the profile 86~
as implan-tecl with horon to Ille wafer and -the broken line the theoretical value -thereof, respectively. Further, i.n this graph the black dots show -the case where the light is radiated in 6 seconds, while the white dots and rectangles the cases where wafers are heated at 1000C and 1100C for 15 minutes in an electrical furnace. Therefore, it is understood that little rediffusion of impurities occurs by the light anneal, and the distribution of the sheet resistancè within the wafer is wi-thin 1.2 %.
Experimental Example 2 Si ions are implan-ted to a wafer of GaAs with Cr doped thereinto with the energy of 70 Ke~ and the dose amount of 3 x 1012 cm 2 and t e~ alogen lamp light is radiated on the wafer by using the heating apparatus of Fig. 1. In this case, the GaAs wafer is placed on a substrate such as of silicon, which has smooth surfaces, absorbs the radiated light and is suspended by the quartz suspender 2 as in Figure 1, with i-ts implanted surface down and contacting the upper surface of the silicon substrate.
This is to conduct heat to the GaAs wafer and to avoid the evaporation of As. In the case of the GaAs wafer having Cr doped thereinto, excess carriers are generated by the out diffusion of Cr and N-type thermal conversion is apt to be generated -therein.
Fig. 5 is a graph showing the comparison of carrier profiles of wafers which are especially prone to be thermally converted. In the graph of Fig. 5, curves A and B show the case heated by the light up to 9~0C and at that instant the radiation is s-topped and that heated by the light up to 900C and the radiation thereof is kept for tenseconds, respectively, while ~ curVe C shows the case where a wafer is heated in an electric~l ~urnace at 850C for 15 m~nutesO From the graph of Fig. 5 it w~ll be understood that according to the light anneal little excess carriers are seen and the carrier profile is sharp.
In addition, the present heating apparatus can be applied to such a heating process that an insulating layer for passivating the surface of GaAs wafer during annealing is formed before annealing. In 1his case, SiH4, 2 and so on are introduced to the same quartz tube of the heating apparatus in which the wafer is ]Located, and after the gas flow becomes stable, the light is radiated on the wafer to heat the same at 400 to 500C for several seconds to thereby make an SiO2 layer by chemical vapor deposition on the surface of the wafer. This wafer is then subjected to the anneal heating in the same quartz tube.
It may be apparant that the present invention can be applied not cnly to the above examples but also to such a process that ions are implanted to wafer at more higher dose amounts, to prevent the diffusion of atoms from a metal layer, which serves such as an ion implantation mask or a contact conductor, to the substrate.
Experimental Example 1 To the surfaees (100), (111) of Czochralski crystal wafer of Si in the N-type, implanted are B ions with the energy of 200 KeV and the dose amount of 10 em ~n~ e ~
Then , this wafer is radiated by the'halogen lamp light using the heating apparatus shown in Fig; 1 with ~he lamp input of 35 W cm 2.
Fig. 3 is a graph showing the relation of the light radiation -time to the sheet resis-tance of the wafer surfaee. In the graph of Fig. 3, the black dots show the wafer with the (100) surface and the resistivity of 40 to 80 Qcm and the black triangules show the wafer with the (111) surface and the resistivity of 60 to 80 Qcm, respeetively.
~ccording to the electrical furnaee annealing, for example, at 1100C and for 15 minutes , the sheet resistanee of a semieonduetor wafer is about 80 Q/a (Qhm per unit area).
Therefore, it will be understood that, aecording to the above example of the invention, a semieonduetor wafer having the charaeteristic similar to that of the prior art can be pro-duced by the radiation of light for about 6 seconds.
Fig. 4 is a graph showing the concentration profile of boron in the (111) surface a semiconductor wafer.
In the graph of Fig. 4, the solid line represents the profile 86~
as implan-tecl with horon to Ille wafer and -the broken line the theoretical value -thereof, respectively. Further, i.n this graph the black dots show -the case where the light is radiated in 6 seconds, while the white dots and rectangles the cases where wafers are heated at 1000C and 1100C for 15 minutes in an electrical furnace. Therefore, it is understood that little rediffusion of impurities occurs by the light anneal, and the distribution of the sheet resistancè within the wafer is wi-thin 1.2 %.
Experimental Example 2 Si ions are implan-ted to a wafer of GaAs with Cr doped thereinto with the energy of 70 Ke~ and the dose amount of 3 x 1012 cm 2 and t e~ alogen lamp light is radiated on the wafer by using the heating apparatus of Fig. 1. In this case, the GaAs wafer is placed on a substrate such as of silicon, which has smooth surfaces, absorbs the radiated light and is suspended by the quartz suspender 2 as in Figure 1, with i-ts implanted surface down and contacting the upper surface of the silicon substrate.
This is to conduct heat to the GaAs wafer and to avoid the evaporation of As. In the case of the GaAs wafer having Cr doped thereinto, excess carriers are generated by the out diffusion of Cr and N-type thermal conversion is apt to be generated -therein.
Fig. 5 is a graph showing the comparison of carrier profiles of wafers which are especially prone to be thermally converted. In the graph of Fig. 5, curves A and B show the case heated by the light up to 9~0C and at that instant the radiation is s-topped and that heated by the light up to 900C and the radiation thereof is kept for tenseconds, respectively, while ~ curVe C shows the case where a wafer is heated in an electric~l ~urnace at 850C for 15 m~nutesO From the graph of Fig. 5 it w~ll be understood that according to the light anneal little excess carriers are seen and the carrier profile is sharp.
In addition, the present heating apparatus can be applied to such a heating process that an insulating layer for passivating the surface of GaAs wafer during annealing is formed before annealing. In 1his case, SiH4, 2 and so on are introduced to the same quartz tube of the heating apparatus in which the wafer is ]Located, and after the gas flow becomes stable, the light is radiated on the wafer to heat the same at 400 to 500C for several seconds to thereby make an SiO2 layer by chemical vapor deposition on the surface of the wafer. This wafer is then subjected to the anneal heating in the same quartz tube.
It may be apparant that the present invention can be applied not cnly to the above examples but also to such a process that ions are implanted to wafer at more higher dose amounts, to prevent the diffusion of atoms from a metal layer, which serves such as an ion implantation mask or a contact conductor, to the substrate.
Claims (4)
1. A process of manufacturing a semiconductor device comprising the steps of:
a) implanting impurity ions in a surface of a semiconductor substrate; and b) radiating continuous incoherent light with a beam width wider than said substrate whereby the implanted region is electrically activated.
a) implanting impurity ions in a surface of a semiconductor substrate; and b) radiating continuous incoherent light with a beam width wider than said substrate whereby the implanted region is electrically activated.
2. A process of manufacturing a semiconductor device as claimed in claim 1, in which said light is emitted from a heated refractory metal.
3. A process of manufacturing a semiconductor device as claimed in claim 1, in which said substrate is suspended such that both of major surfaces are exposed to the radiation.
4. A process of manufacturing a semiconductor device as claimed in claim 1, in which said implanted surface of said substrate is placed on a wafer which absorbs the light and is suspended with its lower surface exposed to the radiation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16374679A JPS56100412A (en) | 1979-12-17 | 1979-12-17 | Manufacture of semiconductor device |
| JP163746/79 | 1979-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1143867A true CA1143867A (en) | 1983-03-29 |
Family
ID=15779889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000366877A Expired CA1143867A (en) | 1979-12-17 | 1980-12-16 | Process for manufacturing a semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4482393A (en) |
| JP (1) | JPS56100412A (en) |
| CA (1) | CA1143867A (en) |
| DE (1) | DE3047297A1 (en) |
| FR (1) | FR2473787B1 (en) |
| GB (1) | GB2065973B (en) |
| NL (1) | NL191621C (en) |
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| JPS5750427A (en) * | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
| JPS58186933A (en) * | 1982-04-23 | 1983-11-01 | Sharp Corp | Preparation of semiconductor device |
| JPS5939927U (en) * | 1982-09-07 | 1984-03-14 | 株式会社日立国際電気 | Substrate heating device for thin film production equipment |
| JPS5984422A (en) * | 1982-11-04 | 1984-05-16 | Pioneer Electronic Corp | Manufacture of semiconductor device |
| GB2136937A (en) * | 1983-03-18 | 1984-09-26 | Philips Electronic Associated | A furnace for rapidly heating semiconductor bodies |
| JPH0666330B2 (en) * | 1983-08-10 | 1994-08-24 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
| JPS6077419A (en) * | 1983-10-04 | 1985-05-02 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS6085512A (en) * | 1983-10-18 | 1985-05-15 | Seiko Epson Corp | Manufacture of semiconductor device |
| US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
| US4732866A (en) * | 1984-03-12 | 1988-03-22 | Motorola Inc. | Method for producing low noise, high grade constant semiconductor junctions |
| JPS60257089A (en) * | 1984-05-31 | 1985-12-18 | ニチデン機械株式会社 | Infrared ray heating device |
| JPS6122634A (en) * | 1984-07-10 | 1986-01-31 | Matsushita Electric Ind Co Ltd | Infrared ray lamp annealing box |
| US4576652A (en) * | 1984-07-12 | 1986-03-18 | International Business Machines Corporation | Incoherent light annealing of gallium arsenide substrate |
| GB8418063D0 (en) * | 1984-07-16 | 1984-08-22 | Atomic Energy Authority Uk | Temperature control in vacuum |
| US4566913A (en) * | 1984-07-30 | 1986-01-28 | International Business Machines Corporation | Rapid thermal annealing of silicon dioxide for reduced electron trapping |
| US4617066A (en) * | 1984-11-26 | 1986-10-14 | Hughes Aircraft Company | Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing |
| JPS61219133A (en) * | 1985-03-25 | 1986-09-29 | Sony Corp | Photo irradiation annealing apparatus |
| US4621413A (en) * | 1985-06-03 | 1986-11-11 | Motorola, Inc. | Fabricating a semiconductor device with reduced gate leakage |
| US5753542A (en) | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
| JPS62128525A (en) * | 1985-11-29 | 1987-06-10 | Matsushita Electric Ind Co Ltd | Annealing method for compound semiconductor substrate |
| FR2594529B1 (en) * | 1986-02-19 | 1990-01-26 | Bertin & Cie | APPARATUS FOR HEAT TREATMENT OF THIN PARTS, SUCH AS SILICON WAFERS |
| US4729962A (en) * | 1986-03-24 | 1988-03-08 | The United States Of America As Represented By The United States Department Of Energy | Semiconductor junction formation by directed heat |
| US4751193A (en) * | 1986-10-09 | 1988-06-14 | Q-Dot, Inc. | Method of making SOI recrystallized layers by short spatially uniform light pulses |
| US5514885A (en) * | 1986-10-09 | 1996-05-07 | Myrick; James J. | SOI methods and apparatus |
| FR2605647B1 (en) * | 1986-10-27 | 1993-01-29 | Nissim Yves | METHOD FOR VAPOR PHASE DEPOSITION BY THERMAL FLASH OF AN INSULATING LAYER ON A SUBSTRATE OF III-V MATERIAL, APPLICATION TO THE MANUFACTURE OF A MIS STRUCTURE |
| US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
| US4916082A (en) * | 1989-03-14 | 1990-04-10 | Motorola Inc. | Method of preventing dielectric degradation or rupture |
| US5017508A (en) * | 1989-06-29 | 1991-05-21 | Ixys Corporation | Method of annealing fully-fabricated, radiation damaged semiconductor devices |
| US5155337A (en) * | 1989-12-21 | 1992-10-13 | North Carolina State University | Method and apparatus for controlling rapid thermal processing systems |
| US5215588A (en) * | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
| JP2534608B2 (en) * | 1993-01-18 | 1996-09-18 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
| JP3173926B2 (en) | 1993-08-12 | 2001-06-04 | 株式会社半導体エネルギー研究所 | Method of manufacturing thin-film insulated gate semiconductor device and semiconductor device thereof |
| JP2601209B2 (en) * | 1994-08-23 | 1997-04-16 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
| US5561735A (en) * | 1994-08-30 | 1996-10-01 | Vortek Industries Ltd. | Rapid thermal processing apparatus and method |
| US5904575A (en) * | 1997-02-14 | 1999-05-18 | Advanced Micro Devices, Inc. | Method and apparatus incorporating nitrogen selectively for differential oxide growth |
| US6040019A (en) * | 1997-02-14 | 2000-03-21 | Advanced Micro Devices, Inc. | Method of selectively annealing damaged doped regions |
| US5795627A (en) * | 1997-02-14 | 1998-08-18 | Advanced Micro Devices, Inc. | Method for annealing damaged semiconductor regions allowing for enhanced oxide growth |
| JP3450163B2 (en) * | 1997-09-12 | 2003-09-22 | Ｎｅｃエレクトロニクス株式会社 | Method for manufacturing semiconductor device |
| US6174388B1 (en) | 1999-03-15 | 2001-01-16 | Lockheed Martin Energy Research Corp. | Rapid infrared heating of a surface |
| US6303411B1 (en) | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
| US6496648B1 (en) | 1999-08-19 | 2002-12-17 | Prodeo Technologies, Inc. | Apparatus and method for rapid thermal processing |
| US6594446B2 (en) | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
| CN101324470B (en) | 2001-12-26 | 2011-03-30 | 加拿大马特森技术有限公司 | Temperature measurement and heat-treating methods and systems |
| KR101163682B1 (en) | 2002-12-20 | 2012-07-09 | 맷슨 테크날러지 캐나다 인코퍼레이티드 | Apparatus and method for supporting a workpiece |
| WO2005059991A1 (en) | 2003-12-19 | 2005-06-30 | Mattson Technology Canada Inc. | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
| US7781947B2 (en) | 2004-02-12 | 2010-08-24 | Mattson Technology Canada, Inc. | Apparatus and methods for producing electromagnetic radiation |
| US7133604B1 (en) * | 2005-10-20 | 2006-11-07 | Bergstein David M | Infrared air heater with multiple light sources and reflective enclosure |
| WO2008058397A1 (en) | 2006-11-15 | 2008-05-22 | Mattson Technology Canada, Inc. | Systems and methods for supporting a workpiece during heat-treating |
| WO2009137940A1 (en) | 2008-05-16 | 2009-11-19 | Mattson Technology Canada, Inc. | Workpiece breakage prevention method and apparatus |
| WO2015034654A1 (en) * | 2013-09-06 | 2015-03-12 | Applied Materials, Inc. | Circular lamp arrays |
| JP6916988B2 (en) * | 2017-05-29 | 2021-08-11 | ウシオ電機株式会社 | Light heating device |
| US10669430B2 (en) * | 2018-07-17 | 2020-06-02 | Varian Semiconductor Equipment Associates, Inc. | Anti-reflective coating for transparent end effectors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3692572A (en) * | 1969-08-12 | 1972-09-19 | Wolfgang Strehlow | Epitaxial film process and products thereof |
| US3763348A (en) * | 1972-01-05 | 1973-10-02 | Argus Eng Co | Apparatus and method for uniform illumination of a surface |
| US4001048A (en) * | 1974-06-26 | 1977-01-04 | Signetics Corporation | Method of making metal oxide semiconductor structures using ion implantation |
| US4151008A (en) * | 1974-11-15 | 1979-04-24 | Spire Corporation | Method involving pulsed light processing of semiconductor devices |
| US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
| JPS5577145A (en) * | 1978-12-05 | 1980-06-10 | Ushio Inc | Annealing furnace |
| US4229232A (en) * | 1978-12-11 | 1980-10-21 | Spire Corporation | Method involving pulsed beam processing of metallic and dielectric materials |
| US4331485A (en) * | 1980-03-03 | 1982-05-25 | Arnon Gat | Method for heat treating semiconductor material using high intensity CW lamps |
-
1979
- 1979-12-17 JP JP16374679A patent/JPS56100412A/en active Granted
-
1980
- 1980-12-11 GB GB8039713A patent/GB2065973B/en not_active Expired
- 1980-12-12 NL NL8006759A patent/NL191621C/en not_active IP Right Cessation
- 1980-12-15 US US06/216,273 patent/US4482393A/en not_active Expired - Lifetime
- 1980-12-16 FR FR8026708A patent/FR2473787B1/en not_active Expired
- 1980-12-16 CA CA000366877A patent/CA1143867A/en not_active Expired
- 1980-12-16 DE DE19803047297 patent/DE3047297A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2065973A (en) | 1981-07-01 |
| JPS56100412A (en) | 1981-08-12 |
| FR2473787B1 (en) | 1985-10-25 |
| NL191621C (en) | 1995-11-06 |
| DE3047297A1 (en) | 1981-09-17 |
| DE3047297C2 (en) | 1993-04-01 |
| NL8006759A (en) | 1981-07-16 |
| GB2065973B (en) | 1983-11-23 |
| NL191621B (en) | 1995-07-03 |
| FR2473787A1 (en) | 1981-07-17 |
| JPS614173B2 (en) | 1986-02-07 |
| US4482393A (en) | 1984-11-13 |
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