CA1108740A - Light emitting semiconductor component - Google Patents
Light emitting semiconductor componentInfo
- Publication number
- CA1108740A CA1108740A CA300,847A CA300847A CA1108740A CA 1108740 A CA1108740 A CA 1108740A CA 300847 A CA300847 A CA 300847A CA 1108740 A CA1108740 A CA 1108740A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- substrate
- zn2sio4
- zone
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
ABSTRACT OF THE DISCLOSURE
A light emitting semiconductor component in which a semiconductor substrate of a first conductivity type has a zone of a second conductivity type formed therein immediately below a portion of a planar surface thereof. An insulating layer covers the planar surface but has a window through the insulating layer above most of the zone of the second con-ductivity type. A layer of Zn2SiO4 doped with a luminous phospor lies on the planar substrate surface within this window without contact with the walls of the window opening.
Three metal electrodes are formed, one on the portion of the Zn2SiO4 layer, one on the substrate surface above a marginal portion of the doped zone, and one on the substrate spaced from the doped zone. The Zn2SiO4 layer is preferably doped with Mn ions in a concentration of between 5?1016 and 5?1019 cm-3. The depth of the zone is less than 1000 nm. One preferred doping for the zone of the second conductivity type is a doping of boron in a concentration of between 5?1018 and 5?1019 ions cm-3. A process for the production of the com-ponent is disclosed, and a process for the operation of the component is disclosed.
A light emitting semiconductor component in which a semiconductor substrate of a first conductivity type has a zone of a second conductivity type formed therein immediately below a portion of a planar surface thereof. An insulating layer covers the planar surface but has a window through the insulating layer above most of the zone of the second con-ductivity type. A layer of Zn2SiO4 doped with a luminous phospor lies on the planar substrate surface within this window without contact with the walls of the window opening.
Three metal electrodes are formed, one on the portion of the Zn2SiO4 layer, one on the substrate surface above a marginal portion of the doped zone, and one on the substrate spaced from the doped zone. The Zn2SiO4 layer is preferably doped with Mn ions in a concentration of between 5?1016 and 5?1019 cm-3. The depth of the zone is less than 1000 nm. One preferred doping for the zone of the second conductivity type is a doping of boron in a concentration of between 5?1018 and 5?1019 ions cm-3. A process for the production of the com-ponent is disclosed, and a process for the operation of the component is disclosed.
Description
The invention re:Late.s to a light emitt:in~ semiconductor component ~hich can be produced as a s:i:Licon semiconductor substrate as part of an integrated circuit.
In modern semiconductor technology, the requirement very often exists of rendering the results of electrical measurements or operations optically visible, e.g., in pocket calculators, wristwatches and in measuring instruments having a digital display. Those components which serve to carry out electrical operations or the processing of measured values cur-rently consist virtually entirely of silicon semiconductor components. As silicon is not light-emissive in the visible spectral range, special com-ponents or component groups are employed for the optical displays which are galvanically connected via supply lines to the silicon semiconductor com-ponents.
~n accordance with the prior art, generally light emitting diodes, e.g.g GaP luminescent diodes or liquid crystals are generally used for the optical display.
The optical display elements employed in the prior art have the disadvantage that they must be constructed separately from the silicon semiconductor components and the integrated circuits produced on a silicon chip so that they cannot be constructed in integrated fashion together with the silicon components and thus cannot be produced in the same process.
The aim of the invention is to provide a light emitting semicon-ductor component which can be produced on a silicon semiconductor~substrate and, for the production process, can be combined with other process steps required for constructing integrated circuits on silicon.
Preferred embodiments of -the semiconductor component of the invention and a process for the production thereof and an operating process for this component are hereafter described.
The invention exploits the fact, known from "Journal Yacuum Science ~ ' .
s"~ fJ~
and Technology", Vol. 13, No. 1, 1976, pages 410-413 tha-t thin films consisting of Zn2SiO4 can be doped by ion implanation with ions of luminous phosphors, for example, Mn ions, and that when bombarded with an electron beam, layers of this kind can be excited so as to become luminescent.
In accordance with the present invention, a silicon substrate is coated with a layer of Zn2SiO4 and beneath this layer, doped with luminous phosphors in the silicon substrate, there is arranged a pn-junction. If the pn~junction is operated in the flow direction and an appropriate potential is connected to the layer doped with the liminous phosphors, electrons pass out of the silicon substrate into this layer provided with the luminous phosphors where they produce light emission. The ad--~ vantage of the component in accordance with the invention con-sists in that it can be constructed on a silicon substrate and that the production process thereof is compatible with convention-al silicon technology.
- Thus, in accordance with a broad aspect of the inven-tion, there is provided a light emitting semiconductor compound comprising a semiconductor substrate of a first conductivity type, said substrate having a zone of the second conductivity ~ type lying immediately below a planar surface of said substrate ;~ and forming a pn-junction therewith lying substantially parallel to said planar surface, a layer of Zn2SiO4 on said planar sur-face of said substrate above a portion of said zone, said layer :,, of Zn2SiO4 being doped with a luminous phosphor, said Zn2SiO4 layer, said zone, and said substrate each being provided with a ~- terminal electrode.
In the following, the semiconductor component in accordance with the invention will be described in detail making reference to an exemplary embodiment illustrated in the Figures, and a production process and operating process for this component
In modern semiconductor technology, the requirement very often exists of rendering the results of electrical measurements or operations optically visible, e.g., in pocket calculators, wristwatches and in measuring instruments having a digital display. Those components which serve to carry out electrical operations or the processing of measured values cur-rently consist virtually entirely of silicon semiconductor components. As silicon is not light-emissive in the visible spectral range, special com-ponents or component groups are employed for the optical displays which are galvanically connected via supply lines to the silicon semiconductor com-ponents.
~n accordance with the prior art, generally light emitting diodes, e.g.g GaP luminescent diodes or liquid crystals are generally used for the optical display.
The optical display elements employed in the prior art have the disadvantage that they must be constructed separately from the silicon semiconductor components and the integrated circuits produced on a silicon chip so that they cannot be constructed in integrated fashion together with the silicon components and thus cannot be produced in the same process.
The aim of the invention is to provide a light emitting semicon-ductor component which can be produced on a silicon semiconductor~substrate and, for the production process, can be combined with other process steps required for constructing integrated circuits on silicon.
Preferred embodiments of -the semiconductor component of the invention and a process for the production thereof and an operating process for this component are hereafter described.
The invention exploits the fact, known from "Journal Yacuum Science ~ ' .
s"~ fJ~
and Technology", Vol. 13, No. 1, 1976, pages 410-413 tha-t thin films consisting of Zn2SiO4 can be doped by ion implanation with ions of luminous phosphors, for example, Mn ions, and that when bombarded with an electron beam, layers of this kind can be excited so as to become luminescent.
In accordance with the present invention, a silicon substrate is coated with a layer of Zn2SiO4 and beneath this layer, doped with luminous phosphors in the silicon substrate, there is arranged a pn-junction. If the pn~junction is operated in the flow direction and an appropriate potential is connected to the layer doped with the liminous phosphors, electrons pass out of the silicon substrate into this layer provided with the luminous phosphors where they produce light emission. The ad--~ vantage of the component in accordance with the invention con-sists in that it can be constructed on a silicon substrate and that the production process thereof is compatible with convention-al silicon technology.
- Thus, in accordance with a broad aspect of the inven-tion, there is provided a light emitting semiconductor compound comprising a semiconductor substrate of a first conductivity type, said substrate having a zone of the second conductivity ~ type lying immediately below a planar surface of said substrate ;~ and forming a pn-junction therewith lying substantially parallel to said planar surface, a layer of Zn2SiO4 on said planar sur-face of said substrate above a portion of said zone, said layer :,, of Zn2SiO4 being doped with a luminous phosphor, said Zn2SiO4 layer, said zone, and said substrate each being provided with a ~- terminal electrode.
In the following, the semiconductor component in accordance with the invention will be described in detail making reference to an exemplary embodiment illustrated in the Figures, and a production process and operating process for this component
-2-~ ~$
~: , will ~e described.
Figures 1 to 5 schematically illustrate the productionprocess for a light emitting semiconductor component in accor-dance with the invention;
Figure 6 schematically illustrates the finished, light emitting semiconductor component; and Figure 7 schematically illustrates -the matter in which the light emitting semiconductor component in accordance with the invention is operated.
A preferred embodiment of the present invention in-cludes a silicon substrate 1 of a first conductivity type such, for example, as an n-conducting silicon having a specific resistance of, e.g. 0.1 ohm-cm. The semiconductor component is produced by forming a thick oxide layer 2 on the substrate by thermal oxidation in a thickness of approximately l/um. By employing a ` -2a-:~' .3~4~
photolithographic-technique, a window is etched into this thick oxide layer 2 above the area provided for a zone 5 of the second conductivity type, so that the substrate l is exposed at this point. The substrate surface which has been exposed in this way is then coated with a thin oxide layer 21 con-sisting of SiO2, for example, by heating in the presence of oxygen~ The thickness of this thin oxide layer 21 is approximately 200 nm. Thereafter, a further layer 3 consisting of ZnF2 is deposited in a thickness of approxi-mately 150 nm, and possibly also over the thick oxide layer 2. The deposi-tion of the ZnF2 can also take place by vapor deposition.
Following the application of this ZnF2 layer, the substrate and the layer arranged thereupon are tempered for several hours at approximately 1000C. A reaction of the type 2ZnF2+2SiO2-~Zn2SiO4+SiF4 now takes place, by means of which the thin oxide layer 21 and parts of the thick oxide layer 2 are transformed into a Zn2SiO4 layer 4. As a result of this trans-formation, a fault-free transition between the Si substrate and the Zn2SiO4 layer is achieved. When the Zn2SiO4 layer 4 has been produced, ions of the p-conductivity type, for example B-ions are implanted in order to produce a flat zone 5 of the second conductivity type. The implantation energy and the dose are contrived to be such that between the substrate 1 and this zone 5, there runs a pn-boundary layer 7 at a depth of approximately 100 nm beneath the substrate surface. This first implantation step is followed by a second implantation step employing ions 9 of a luminous phosphors, for example Mn ions. The sequence of the implantation steps can also be reversed.
Following this second implantation, tempering is carried out at approximately 1100 for approximately 15 minutes in order to heal and activate implanted B- and Mn-dopingO Employirg a photolithographic technique the Zn2SiO~ layer 4 is then etched away, with the exclusion of the zones 41 pro-vided for the luminescent zones. AsGetic acid can be employed for example, as etching agent. Following the formation of the zones 41, the electrodes ~ J/~
are produced by vapor deposition with aluminum. Then the individual con-tact electrodes 64 and 65 are etched out of this aluminum layer again employing a photolithographic technique. ~ substrate terminal 6t is also provided, for example, on the rear of the substra-te 1. The aluminum contacts are alloyed in by heating the component to approximately 450C for 15 minutes in a H2 atmosphere.
Figure 7 schematically illustrates the operating process for a light emittir,g semiconductor component in accordance with the invention.
Between the substrate contact 61 and the electrode 64 arranged on the Zn2SiO4 layer 41, there is connected a voltage source 10, so that the poten-tial across the electrode 64 amounts to approximately 50 V relative to the substrate. Between the electrode 65 of the zone 5 and the substrate termi-nal, there is connected a voltage source 11, so that a potential difference of more than approximately 0.7 V exists between this electrode 65 and the substrate. The magnitude of the voltage source 11 can serve to control the current injected into the layer 41. In place of the d.c. voltage source 11, a pulse generator 12 can also be connected between the electrode 65 and the substrate, so that the potential of the zone 5 is increased in pulse like fashion above the substrate. When the component is operated in this way, electrons pass from the substrate via the ~one 5 into the layer 41 where they lead to light emission from light quanta on the ions of the luminous phosphors.
~` It will be apparent to those skilled in the art that many modi-fications and variations may be effected without departing from the spirit and scope of the novel concepts of the present invention.
'': ' :
~: , will ~e described.
Figures 1 to 5 schematically illustrate the productionprocess for a light emitting semiconductor component in accor-dance with the invention;
Figure 6 schematically illustrates the finished, light emitting semiconductor component; and Figure 7 schematically illustrates -the matter in which the light emitting semiconductor component in accordance with the invention is operated.
A preferred embodiment of the present invention in-cludes a silicon substrate 1 of a first conductivity type such, for example, as an n-conducting silicon having a specific resistance of, e.g. 0.1 ohm-cm. The semiconductor component is produced by forming a thick oxide layer 2 on the substrate by thermal oxidation in a thickness of approximately l/um. By employing a ` -2a-:~' .3~4~
photolithographic-technique, a window is etched into this thick oxide layer 2 above the area provided for a zone 5 of the second conductivity type, so that the substrate l is exposed at this point. The substrate surface which has been exposed in this way is then coated with a thin oxide layer 21 con-sisting of SiO2, for example, by heating in the presence of oxygen~ The thickness of this thin oxide layer 21 is approximately 200 nm. Thereafter, a further layer 3 consisting of ZnF2 is deposited in a thickness of approxi-mately 150 nm, and possibly also over the thick oxide layer 2. The deposi-tion of the ZnF2 can also take place by vapor deposition.
Following the application of this ZnF2 layer, the substrate and the layer arranged thereupon are tempered for several hours at approximately 1000C. A reaction of the type 2ZnF2+2SiO2-~Zn2SiO4+SiF4 now takes place, by means of which the thin oxide layer 21 and parts of the thick oxide layer 2 are transformed into a Zn2SiO4 layer 4. As a result of this trans-formation, a fault-free transition between the Si substrate and the Zn2SiO4 layer is achieved. When the Zn2SiO4 layer 4 has been produced, ions of the p-conductivity type, for example B-ions are implanted in order to produce a flat zone 5 of the second conductivity type. The implantation energy and the dose are contrived to be such that between the substrate 1 and this zone 5, there runs a pn-boundary layer 7 at a depth of approximately 100 nm beneath the substrate surface. This first implantation step is followed by a second implantation step employing ions 9 of a luminous phosphors, for example Mn ions. The sequence of the implantation steps can also be reversed.
Following this second implantation, tempering is carried out at approximately 1100 for approximately 15 minutes in order to heal and activate implanted B- and Mn-dopingO Employirg a photolithographic technique the Zn2SiO~ layer 4 is then etched away, with the exclusion of the zones 41 pro-vided for the luminescent zones. AsGetic acid can be employed for example, as etching agent. Following the formation of the zones 41, the electrodes ~ J/~
are produced by vapor deposition with aluminum. Then the individual con-tact electrodes 64 and 65 are etched out of this aluminum layer again employing a photolithographic technique. ~ substrate terminal 6t is also provided, for example, on the rear of the substra-te 1. The aluminum contacts are alloyed in by heating the component to approximately 450C for 15 minutes in a H2 atmosphere.
Figure 7 schematically illustrates the operating process for a light emittir,g semiconductor component in accordance with the invention.
Between the substrate contact 61 and the electrode 64 arranged on the Zn2SiO4 layer 41, there is connected a voltage source 10, so that the poten-tial across the electrode 64 amounts to approximately 50 V relative to the substrate. Between the electrode 65 of the zone 5 and the substrate termi-nal, there is connected a voltage source 11, so that a potential difference of more than approximately 0.7 V exists between this electrode 65 and the substrate. The magnitude of the voltage source 11 can serve to control the current injected into the layer 41. In place of the d.c. voltage source 11, a pulse generator 12 can also be connected between the electrode 65 and the substrate, so that the potential of the zone 5 is increased in pulse like fashion above the substrate. When the component is operated in this way, electrons pass from the substrate via the ~one 5 into the layer 41 where they lead to light emission from light quanta on the ions of the luminous phosphors.
~` It will be apparent to those skilled in the art that many modi-fications and variations may be effected without departing from the spirit and scope of the novel concepts of the present invention.
'': ' :
Claims (10)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A light emitting semiconductor compound comprising a semiconductor substrate of a first conductivity type, said sub-strate having a zone of the second conductivity type lying immediately below a planar surface of said substrate and forming a pn-junction therewith lying substantially parallel to said planar surface, a layer of Zn2SiO4 on said planar surface of said substrate above a portion of said zone, said layer of Zn2SiO4 being doped with a luminous phosphor, said Zn2SiO4 layer, said zone, and said substrate each being provided with a terminal electrode.
2. Light emitting semiconductor component as claimed in claim 1, in which said Zn2SiO4 layer is doped with Mn ions in a concentration of between 5?1016 and 5?1019 cm-3.
3. Light emitting semiconductor component as claimed in one of the claims 1 or 2, in which said pn-junction lying at a distance of less than 1000 nm beneath the substrate surface.
4. Light emitting semiconductor component as claimed in claim 1, in which said semiconductor substrate consists of n-conducting type silicon.
5. Light emitting semiconductor component as claimed in claim 1, in which said substrate has a specific conductivity of approximately 0.1 ohm-cm.
6. Light emitting semiconductor component as claimed in claim 1, in which the thickness of said Zn2SiO4 layer amounts to approximately 150 nm.
7. Light emitting semiconductor component as claimed in claim 1, in which said zone of the second conductivity type is doped with boron ions in a concentration of between 5?1018 and 5?1019 ions cm-3.
8. Process for the production of a light emitting compon-ent as claimed in claim 1, in which the following sequence of process steps are performed:
a) deposition of a thick oxide layer consisting of SiO2 in a thickness of approximately 1/um onto an n-conducting silicon substrate;
b) etching of a window into the thick oxide layer above the area provided for the zone of the second conductivity type, by means of a photolithographic technique;
c) application of a thin oxide layer consisting of SiO2 in a thickness of approximately 200 nm in the region of the window onto the substrate surface;
d) deposition of a layer consisting of ZnF2 in a thick-ness of approximately 150 nm at least in the region of the thin oxide layer;
e) tempering of the substrate and of the layers arranged thereupon at a temperature of approximately 1000°C, so that said ZnF2 layer and said thin oxide layer are transformed into a Zn2SiO4 layer in accordance with the reaction 2ZnF2+2SiO2?Zn2SiO4+SiF2;
f) implantation of B-ions into said substrate to pro-duce said zone of the second conductivity type;
g) implantation of luminous phosphors ions in-to said ZnSiO4 layer;
h) tempering at approximately 1100 C in order to heal and activate the implantation dopings in said substrate and in said Zn2SiO4 layer;
i) etching of said Zn2SiO4 layer photolithographically in order to form the zones provided as luminescent zones;
j) vapor deposition of an aluminum layer and etching away of the contact electrodes for said Zn2SiO4 layer and said zone of the second conductivity type, respectively, by means of a photolithographic technique;
k) alloying in of the aluminum contacts at a tempera-ture of approximately 450°C; and 1) application of a substrate terminal.
a) deposition of a thick oxide layer consisting of SiO2 in a thickness of approximately 1/um onto an n-conducting silicon substrate;
b) etching of a window into the thick oxide layer above the area provided for the zone of the second conductivity type, by means of a photolithographic technique;
c) application of a thin oxide layer consisting of SiO2 in a thickness of approximately 200 nm in the region of the window onto the substrate surface;
d) deposition of a layer consisting of ZnF2 in a thick-ness of approximately 150 nm at least in the region of the thin oxide layer;
e) tempering of the substrate and of the layers arranged thereupon at a temperature of approximately 1000°C, so that said ZnF2 layer and said thin oxide layer are transformed into a Zn2SiO4 layer in accordance with the reaction 2ZnF2+2SiO2?Zn2SiO4+SiF2;
f) implantation of B-ions into said substrate to pro-duce said zone of the second conductivity type;
g) implantation of luminous phosphors ions in-to said ZnSiO4 layer;
h) tempering at approximately 1100 C in order to heal and activate the implantation dopings in said substrate and in said Zn2SiO4 layer;
i) etching of said Zn2SiO4 layer photolithographically in order to form the zones provided as luminescent zones;
j) vapor deposition of an aluminum layer and etching away of the contact electrodes for said Zn2SiO4 layer and said zone of the second conductivity type, respectively, by means of a photolithographic technique;
k) alloying in of the aluminum contacts at a tempera-ture of approximately 450°C; and 1) application of a substrate terminal.
9. Process for the operation of a light emitting semi-conductor component as claimed in claim 1, in which said sub-strate is connected to zero potential, that a potential of approximately 50 V is connected to the electrode of the Zn2SiO4 layer, and a d.c. potential of more than approximately 0.7 V is connected to said electrode of said zone of the second conduc-tivity type.
10. Process for the operation of a light emitting semi-conductor component as claimed in claim 1, in which said sub-strate is connected to zero potential, that a potential of approximately 50 v is connected to the electrode of the Zn2SiO4 layer, and that a pulsed potential of more than approximately 0.7 V is connected to said electrode of said zone of the second conductivity type.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP2716143.9 | 1977-04-12 | ||
| DE19772716143 DE2716143A1 (en) | 1977-04-12 | 1977-04-12 | LIGHT-EMITTING SEMI-CONDUCTOR COMPONENT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1108740A true CA1108740A (en) | 1981-09-08 |
Family
ID=6006131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA300,847A Expired CA1108740A (en) | 1977-04-12 | 1978-04-11 | Light emitting semiconductor component |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4170018A (en) |
| JP (1) | JPS53128289A (en) |
| CA (1) | CA1108740A (en) |
| DE (1) | DE2716143A1 (en) |
| FR (1) | FR2387520A1 (en) |
| GB (1) | GB1547749A (en) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2612334B1 (en) * | 1986-12-12 | 1989-04-21 | Thomson Csf | DEVICE FOR MULTIPLYING CHARGE CARRIERS BY AN AVALANCHE PHENOMENON AND ITS APPLICATION TO PHOTODETECTORS, PHOTOCATHODES, AND INFRARED VIEWERS |
| US5345093A (en) * | 1991-04-15 | 1994-09-06 | The United States Of America As Represented By The Secretary Of The Navy | Graded bandgap semiconductor device for real-time imaging |
| JP2802215B2 (en) * | 1993-11-09 | 1998-09-24 | 双葉電子工業株式会社 | Phosphor manufacturing method |
| US5796120A (en) * | 1995-12-28 | 1998-08-18 | Georgia Tech Research Corporation | Tunnel thin film electroluminescent device |
| BR9612592A (en) * | 1996-04-11 | 1999-07-20 | Nikolai Taimourasovich Bagrev | Process of treatment of pathological tissues by the non-coherent emission and device for the implementation of this process |
| AU747260B2 (en) | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
| EP1168539B1 (en) | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitride semiconductor laser device |
| DE10051465A1 (en) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Method for producing a GaN-based semiconductor component |
| JP2003533030A (en) * | 2000-04-26 | 2003-11-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Manufacturing method of light emitting diode chip and light emitting diode structure element based on GaN |
| EP2270875B1 (en) * | 2000-04-26 | 2018-01-10 | OSRAM Opto Semiconductors GmbH | Sermiconductor light emitting device and method of manufacturing the same |
| TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
| WO2011143510A1 (en) | 2010-05-12 | 2011-11-17 | Lynk Labs, Inc. | Led lighting system |
| US10575376B2 (en) | 2004-02-25 | 2020-02-25 | Lynk Labs, Inc. | AC light emitting diode and AC LED drive methods and apparatus |
| US10499465B2 (en) | 2004-02-25 | 2019-12-03 | Lynk Labs, Inc. | High frequency multi-voltage and multi-brightness LED lighting devices and systems and methods of using same |
| US11317495B2 (en) | 2007-10-06 | 2022-04-26 | Lynk Labs, Inc. | LED circuits and assemblies |
| US11297705B2 (en) | 2007-10-06 | 2022-04-05 | Lynk Labs, Inc. | Multi-voltage and multi-brightness LED lighting devices and methods of using same |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
| WO2013026053A1 (en) | 2011-08-18 | 2013-02-21 | Lynk Labs, Inc. | Devices and systems having ac led circuits and methods of driving the same |
| WO2013082609A1 (en) | 2011-12-02 | 2013-06-06 | Lynk Labs, Inc. | Color temperature controlled and low thd led lighting devices and systems and methods of driving the same |
| US11079077B2 (en) | 2017-08-31 | 2021-08-03 | Lynk Labs, Inc. | LED lighting system and installation methods |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL284439A (en) * | 1961-10-20 | |||
| US3488542A (en) * | 1967-09-01 | 1970-01-06 | William I Lehrer | Light emitting heterojunction semiconductor devices |
| GB1393536A (en) * | 1971-07-28 | 1975-05-07 | Mullard Ltd | Electroluminescent semiconductor devices |
| US4062035A (en) * | 1975-02-05 | 1977-12-06 | Siemens Aktiengesellschaft | Luminescent diode |
-
1977
- 1977-04-12 DE DE19772716143 patent/DE2716143A1/en active Pending
-
1978
- 1978-02-24 GB GB7419/78A patent/GB1547749A/en not_active Expired
- 1978-03-30 US US05/891,559 patent/US4170018A/en not_active Expired - Lifetime
- 1978-03-31 FR FR7809534A patent/FR2387520A1/en not_active Withdrawn
- 1978-04-11 CA CA300,847A patent/CA1108740A/en not_active Expired
- 1978-04-11 JP JP4259978A patent/JPS53128289A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1547749A (en) | 1979-06-27 |
| US4170018A (en) | 1979-10-02 |
| DE2716143A1 (en) | 1978-10-19 |
| FR2387520A1 (en) | 1978-11-10 |
| JPS53128289A (en) | 1978-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1108740A (en) | Light emitting semiconductor component | |
| US4972244A (en) | Photodiode and photodiode array on a II-VI material and processes for the production thereof | |
| US4070689A (en) | Semiconductor solar energy device | |
| US20070004064A1 (en) | Electroluminescent device comprising porous silicon | |
| JPS63503497A (en) | Drive-through doping method for manufacturing low backside recombination solar cells | |
| US6017811A (en) | Method of making improved electrical contact to porous silicon | |
| US3938243A (en) | Schottky barrier diode semiconductor structure and method | |
| US6524966B1 (en) | Surface treatment and protection method for cadmium zinc telluride crystals | |
| US4194934A (en) | Method of passivating a semiconductor device utilizing dual polycrystalline layers | |
| US3909319A (en) | Planar structure semiconductor device and method of making the same | |
| US4055443A (en) | Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating | |
| JPH08330624A (en) | Light-emitting diamond element | |
| KR100575098B1 (en) | Receiver | |
| US3664895A (en) | Method of forming a camera tube diode array target by masking and diffusion | |
| US9842958B2 (en) | Ultrananocrystalline diamond contacts for electronic devices | |
| JP2816684B2 (en) | Manufacturing method of multiple diodes | |
| Goodman | Electroplated gold and copper contacts to cadmium sulfide | |
| JPH0628315B2 (en) | Semiconductor device | |
| JP3106569B2 (en) | Light emitting element | |
| US4198251A (en) | Method of making polychromatic monolithic electroluminescent assembly utilizing epitaxial deposition of graded layers | |
| JPH08107222A (en) | Zener diode | |
| RU2378738C1 (en) | Method of making short-range particle detector | |
| US3583857A (en) | Method of producing a germanium transistor | |
| CA1043895A (en) | Method for producing semiconductor matrix of light-emitting elements | |
| KR100578268B1 (en) | Method for producing diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19980908 |