CA1038939A - Stabilization circuit for radiation emitting diodes - Google Patents
Stabilization circuit for radiation emitting diodesInfo
- Publication number
- CA1038939A CA1038939A CA245,348A CA245348A CA1038939A CA 1038939 A CA1038939 A CA 1038939A CA 245348 A CA245348 A CA 245348A CA 1038939 A CA1038939 A CA 1038939A
- Authority
- CA
- Canada
- Prior art keywords
- laser
- transistor
- photodetector
- current
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/564—Power control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F17/00—Amplifiers using electroluminescent element or photocell
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/504—Laser transmitters using direct modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Abstract
STABILIZATION CIRCUIT FOR RADIATION EMITTING DIODES
Abstract of the Disclosure A particularly important factor limiting the reliability of diode lasers is the catastrophic mirror damage which occurs when the radiated output exceeds a critical value. Experience has shown that this occurs as a result of fluctuations in the drive current, especially in high efficiency diodes. To avoid such damage, a portion of the output radiation from a diode laser, located in the collector circuit of a common emitter drive transistor, is coupled back to a photodetector, located in the base-emitter circuit of the transistor. The resulting negative feedback tends to stabilize the overall operation of the device and maintain the maximum radiated power within safe limits.
Abstract of the Disclosure A particularly important factor limiting the reliability of diode lasers is the catastrophic mirror damage which occurs when the radiated output exceeds a critical value. Experience has shown that this occurs as a result of fluctuations in the drive current, especially in high efficiency diodes. To avoid such damage, a portion of the output radiation from a diode laser, located in the collector circuit of a common emitter drive transistor, is coupled back to a photodetector, located in the base-emitter circuit of the transistor. The resulting negative feedback tends to stabilize the overall operation of the device and maintain the maximum radiated power within safe limits.
Description
This invention relates to arrangements for stabilizing the power output from a diode laser.
Background of the Invention The output power from a diode laser is known to vary as a function of temperature, natural aging, and drive current. As materials and fabrication techniques have improved, aging has become less of a problem. Temperature variations can be handled either by placing the laser in a controlled environment (oven or refrigerator), or by pro~
gramming the drive source to correct for temperature varia-tions. This type of control, however, will either require individual adjustment or extremely tight tolerances on design parameters which, in turn, will lead to reduced yield and higher cost.
The third factor referred to hereinabove, i.e., drive current, is particularly important because of the ease with which catastrophic mirror damage occurs in diode Lasers . .
when the radiation output power exceeds the critical value.
This can occur as a result of spurious fluctuations in the drive current which, in the more efficient diode, need not be very big.
It is, accordingly, the broad object of the present invention to stabilize the output power from diode lasers.
Summary _ the Invention In accordance with one embodiment of the present invention, the output power from a diode laser is stabilized by means of a fast acting negative feedback circuit comprising:
a photodetector; and a drive transistor : .
~.L' J~
~ ' ,~ .
., ,,~
connected in the common emitter configuration. A portion of the output energy radiated by the laser, which is located in the transistor collector circuit, is coupled back to the photodetector, which is located in the transistor base circuit. Photocurrent generated in the photodetector by the incident laser radiation reduces the base input current, thus providing the negative feedback.
It is shown that the total laser output in such an arrangement is independent of the laser slope efficiency to first order. The feedback control circuit thereby provides substantial immunity from changes in this parameter either from device to device, or from within the same device.
It is further shown that the sensitivity of the laser output to changes in the threshold current, the drive current, and the drive transistor current gain is greatly reduced. All of these improvements tend to stabilize the overall operation of the device and minimize the opportunity for catastrophic mirror damage.
It is an advantage of the present invenion that the feedback circuit is sufficiently fast acting to be capable of responding on a pulse-by-pulse basis in a digital system.
In accordance with an aspect of the present invention there is provided the combination comprising: a transistor connected in the common emitter configuration;
a radiation emitting diode laser coupled between the collector and emitter electrodes of said transistor; a photodetector coupled between the base and emitter 30 electrodes of said transistor; means for coupling a ~-portion of the radiated output power from said diode to ~ .
~ - 2 -'' ' ,, ' ' ' ,, , '. ' , ' ' ' ' . ~. . ',' ' ' ~ .' .
, '' .. "' ~ , ' ' said photodetector; and means for coupling an input signal between said base and emitter electrodes.
These and other objects and advantages, the nature of the present invention, and its various features, will appear more fully upon consideration of the various illustrative embodiments now to be described in detail in connection with the accompanying drawings.
Brief Description FIG. 1 shows a first embodiment of a diode laser drive circuit with feedback in accordance with the present invention;
- 2a -,' - , - . - :. :
- : , ~038939 FIG. 2 shows a typical diode laser output power -vs-input current characteristics; and FIG. 3 shows a second embodiment of the invention.
Detailed Description Referring to the drawings, FIG. 1 shows a laser output stabilization circuit in accordance with one embodiment of the present invention. Basically, the circuit includes a ~ - -drive transistor 10, connected in the common emitter configura- `
tion, and a photodetector 11. The latter, which is back-biased by means of a direct current voltage source 12, is connec~ed between the base electrode and the emitter electrode of transistor 10.
The diode laser 13 is connected between the collector electrode and the emitter electrode of transistor 10.
Means, not specifically shown, are provided for coupling a -~
portion of the laser output power onto the photodetector.
This radiation feedback can be done by means of totally and partially reflecting mirrors which deflect a portion of the ~ -; output power back towards detector 11, or by making both laser cavity mirrors partially transmissive, and using the output from one of the two laser mirrors as the useful output, and the output from the other laser mirror as the feedback signal.
A driver signal source 14 is connected between the base and emitter electrodes of transistor 10.
In the absence of an input signal from driver source 14, there is no output signal from laser 13 and the feedback loop between laser 13 and photodetector 11 is open.
- When the drive signal is applied, the loop remains open until the collector current exceeds the laser threshold current IT, at which point the laser turns on, and the - ~
- ~
.- ... . . . .
11)38939 photodetector is illuminated.
In order to analyze the circuit operation, several simplifying assumptions will be made. First, the relationship between the laser power output and the laser injection current, illustrated graphically in FIG. 2, is approximated by L = O for Il < IT ~1) and L = n (IL - IT) for IL - T' (2) where L is the total laser output power;
IT is the laser threshold current;
IL is the laser current;
and _ is a constant called the differential slope efficiency.
The reverse bias on the photodetector is made high enough so that the detector appears essentially as an open circuit to the driver source, which itself has a high output impedance. When illuminated, however, the photodetector becomes a current source whose current Ipc is related to the incident illumination Lpc by pc pc where K is the photodetector efficiency constant.
The photodetector only produces current when it is illuminated and, hence, only when transistor 10 is "on". In this "on" condition, the forward biased base-emitter junction of the transistor presents a low impedance to the detector and essentially all of photodetector current flows through this junction. The~net base current Ib is, therefore, Ib = Id Ipc' where Id is the drive source current. ;
Designating the transistor current gain as ~, the laser current IL, which in the embodiment of FIG. 1 is equal to the collector current Ic, is given by 1~38939 IL ~ Ic-~ ~ (Id Ipc) Designating the fraction of the total laser output intercepted by the photodetector as, f, we derive from .
equations (3) and (4) that IL = ~ ~d ~ fKn (IL T3 (6) .
Solving for IL yields I = ~(Id + fKn IT) (1 + ~fXn) (7) Assuming that one-half the total output power is ~.
used in the feedback loop, i.e., f = 1/2, and using typical values for K, ~ and n, of K = 0.5 m~/mW, ~= 100 and n = 0.6 :
mW/mA, the term fK~n in the denominator is approximately equal to 16. Being much greater than unity, the one in the denominator can be neglected, in which case equation (7) reduces to .~-IL~ IT + Id/fKn. (8) :: :
Substituting equation (7) for IL in equation (~
and making the same approximation as in equation (8), we :.
obtain for the total laser output power .
:
~fK [~ d IT] (9) .:
The first thing to note in equation (9) is that the :
laser output power is to a first order approximation independent of the laser slope efficiency _. The feedback circuit thus provides substantial immunity from changes in this parameter , -either from laser to laser, or from within a given laser.
More accurately, the total laser output power is given by n(~Id ~ IT) (10) 1 + ~fKn Using this more accurate expression, we find that - 5 ~
, - : .. . . : , - , : ~: . . ' . '~
-,, . ... - , . . . ~ , - :::
.
.
1~)38939 the sensitivity of the laser output power to changes in _ with feedback is given by (~fKn) (11) whereas without feedback it is ~n (~Id - IT), (12) which is larger by the factor (~fKn)2 ¦.
Secondly, it is noted that the sensitivity of the laser output to changes in the laser threshold current, to changes in the drive current, and to changes in the transistor current gain is, in each case, significantly reduced.
For example:
(a) The ratios of the change in output power, ~L, to the change in threshold current, ~IT, are given by ~ lK (With feedback) (13) and ~L = _ n (Without feedback). (14) For the parameters given hereinabove, these ratios are -4xlO 2 mW/mA and -60xlO 2 mW/mA, respectively, correspond-ing to a fifteen fold improvement.
(b) The ratios of the change in output power, ~L, to the change in drive current, ~Id, are given by ~ Id fK (With feedback) (15) and ~L = n~ (Without feedback). (16) For the same numerical values, these ratios are ; 4 mW/mA and 60 mW/mA, respectively, thus showing a similar fifteen fold reduction.
(c) The sensitivities of the laser output to changes in the transistor gain are given by ~, ~038939 AL = T (With feedback) t17) and A~ = nId (Without Feedback). (18) For a laser wi~th~a threshold current of 100 mA, ~-nominally operation 10 percent above threshold, we obtain for Id without feedback 1.1 mA, and for equations (14) and (15) ~
values for ~L/~B of 0.04 mW and 0.66 mW, respectively. Thus, -with feedback the sensitivity of the output power to changes in ~is reduced by a factor of approximately 16.
Expressed in terms of the drive current, the output power from the laser is given by L = n~ (Id - IT/~) (Without feedback) (19) and L = (l/fK) (Id - IT/~) (With feedback). (20) To get the same output power with and without feed-back, we equate equations (19) and (20) and obtain Id = n~fKId ~ (n~fK-l) (IT/~). (21) - For the conditions specified above, we find that ~d = 2.5 mA, or that for the same output, the drive current with feedback is 2.27 times the drive current without feedback (Id ~ 1.1 mA). However, what is more significant is the reduced sensitivity of the laser output to changes in driver current and other circuit parameters.
FIG. 3 shows the embodiment of FIG. 1, modified to take into account two matters of practical consideration.
While both matters are taken into account in the illustrative embodiment, the inclusion of either one or the other, or both modifications in any specific case will, of course, depend upon the particular application.
The first of these modifications is a prebiasing circuit comprising a direct current voltage source 20, a resistor 21 and a r.f. choke 22. The prebiasing circuit is ,', ~ .
.~ . .. . .
. .
.. . . . . .
:
1~)38939 connected across laser diode 13 and serves to maintain a minimum bias current Io flowing through the diode. The prebias current, which is less than the threshold current, is provided so to reduce the laser turn-on time.
Also included in the embodiment of FIG. 3 is a second diode 23, such as a Schottky barrier diode, connected across the base-emitter junction of transistor 10. This diode is included to prevent reverse-bias breakdown of the base-emitter junction. It will be noted that both photo-detector 11 and the base-emitter junction of transistor 10 are reverse-biased by direct current voltage source 12. The latter can be as large as 100 volts or greater, which voltage will be div;!ded between the photodetector and the base-emitter junction. To avoid having too large a reverse-bias voltage develop across the latter, diode 23, poled in the forward-bias direction, is connected across the base-emitter junction. This clamps the reverse-bias voltage across the junction at some well-defined, low value. Alternatively, a resistor can be used instead of a diode. The base-emitter voltage in this second case will be determined by the leakage current through the photodetector and the magnitude of the added resistor. If the output imp~dance of the signal source driving transistor 10 is low enough, it will effectively clamp the base-emitter, junction voltage at a safe, low value, in ;~
which case no separate resistor need be added.
The operation of the embodiment of FIG. 3 is substantially the same as described in connection with FIG. ~
1 except that equations (7), (8) and (9) are now given by ~d (Id + fKnIT) + Io (22) (1 + ~fKn) .' ;: '.
: . - - . - . : : ~
16)38939. .
IL ~ IT + fd + ~ o (23) and ~fK [ d ~ T o~ ' (24) respectively.
The sensitivity equations are unaffected except for equation (17) wherein (IT-Io) is substituted for IT.
One assumption implicit in the previous analysis is the timely application of the feedback (i.e., photodetector) current to the base of the transistor. This implies that the total loop delay is at least equal to or faster than the rate at which the output power builds up in the laser diode.
The required rapid response is achieved, in accor-dance with the present invention, by locating the photodetector in the base-emitter circuit of the laser drive transistor In addition, one would advantageously use a fast responding photodetector, and might also shape the drive current pulse to further control the power build up in the laser.
Thus, in all cases it is understood that the above-described arrangements are illustrative of only a small number of the many possible specific embodiments which can , represent applications of the principles of the invention.
Numerous and varied other arrangements can readily be devised in accordance with these principles by those skilled in the art without departing from the spirit and scope of the invention.
.
_ . , - .~ ~ - - ' ~, . . . . . . .
'' . ~ ' '. ~: - ' ,
Background of the Invention The output power from a diode laser is known to vary as a function of temperature, natural aging, and drive current. As materials and fabrication techniques have improved, aging has become less of a problem. Temperature variations can be handled either by placing the laser in a controlled environment (oven or refrigerator), or by pro~
gramming the drive source to correct for temperature varia-tions. This type of control, however, will either require individual adjustment or extremely tight tolerances on design parameters which, in turn, will lead to reduced yield and higher cost.
The third factor referred to hereinabove, i.e., drive current, is particularly important because of the ease with which catastrophic mirror damage occurs in diode Lasers . .
when the radiation output power exceeds the critical value.
This can occur as a result of spurious fluctuations in the drive current which, in the more efficient diode, need not be very big.
It is, accordingly, the broad object of the present invention to stabilize the output power from diode lasers.
Summary _ the Invention In accordance with one embodiment of the present invention, the output power from a diode laser is stabilized by means of a fast acting negative feedback circuit comprising:
a photodetector; and a drive transistor : .
~.L' J~
~ ' ,~ .
., ,,~
connected in the common emitter configuration. A portion of the output energy radiated by the laser, which is located in the transistor collector circuit, is coupled back to the photodetector, which is located in the transistor base circuit. Photocurrent generated in the photodetector by the incident laser radiation reduces the base input current, thus providing the negative feedback.
It is shown that the total laser output in such an arrangement is independent of the laser slope efficiency to first order. The feedback control circuit thereby provides substantial immunity from changes in this parameter either from device to device, or from within the same device.
It is further shown that the sensitivity of the laser output to changes in the threshold current, the drive current, and the drive transistor current gain is greatly reduced. All of these improvements tend to stabilize the overall operation of the device and minimize the opportunity for catastrophic mirror damage.
It is an advantage of the present invenion that the feedback circuit is sufficiently fast acting to be capable of responding on a pulse-by-pulse basis in a digital system.
In accordance with an aspect of the present invention there is provided the combination comprising: a transistor connected in the common emitter configuration;
a radiation emitting diode laser coupled between the collector and emitter electrodes of said transistor; a photodetector coupled between the base and emitter 30 electrodes of said transistor; means for coupling a ~-portion of the radiated output power from said diode to ~ .
~ - 2 -'' ' ,, ' ' ' ,, , '. ' , ' ' ' ' . ~. . ',' ' ' ~ .' .
, '' .. "' ~ , ' ' said photodetector; and means for coupling an input signal between said base and emitter electrodes.
These and other objects and advantages, the nature of the present invention, and its various features, will appear more fully upon consideration of the various illustrative embodiments now to be described in detail in connection with the accompanying drawings.
Brief Description FIG. 1 shows a first embodiment of a diode laser drive circuit with feedback in accordance with the present invention;
- 2a -,' - , - . - :. :
- : , ~038939 FIG. 2 shows a typical diode laser output power -vs-input current characteristics; and FIG. 3 shows a second embodiment of the invention.
Detailed Description Referring to the drawings, FIG. 1 shows a laser output stabilization circuit in accordance with one embodiment of the present invention. Basically, the circuit includes a ~ - -drive transistor 10, connected in the common emitter configura- `
tion, and a photodetector 11. The latter, which is back-biased by means of a direct current voltage source 12, is connec~ed between the base electrode and the emitter electrode of transistor 10.
The diode laser 13 is connected between the collector electrode and the emitter electrode of transistor 10.
Means, not specifically shown, are provided for coupling a -~
portion of the laser output power onto the photodetector.
This radiation feedback can be done by means of totally and partially reflecting mirrors which deflect a portion of the ~ -; output power back towards detector 11, or by making both laser cavity mirrors partially transmissive, and using the output from one of the two laser mirrors as the useful output, and the output from the other laser mirror as the feedback signal.
A driver signal source 14 is connected between the base and emitter electrodes of transistor 10.
In the absence of an input signal from driver source 14, there is no output signal from laser 13 and the feedback loop between laser 13 and photodetector 11 is open.
- When the drive signal is applied, the loop remains open until the collector current exceeds the laser threshold current IT, at which point the laser turns on, and the - ~
- ~
.- ... . . . .
11)38939 photodetector is illuminated.
In order to analyze the circuit operation, several simplifying assumptions will be made. First, the relationship between the laser power output and the laser injection current, illustrated graphically in FIG. 2, is approximated by L = O for Il < IT ~1) and L = n (IL - IT) for IL - T' (2) where L is the total laser output power;
IT is the laser threshold current;
IL is the laser current;
and _ is a constant called the differential slope efficiency.
The reverse bias on the photodetector is made high enough so that the detector appears essentially as an open circuit to the driver source, which itself has a high output impedance. When illuminated, however, the photodetector becomes a current source whose current Ipc is related to the incident illumination Lpc by pc pc where K is the photodetector efficiency constant.
The photodetector only produces current when it is illuminated and, hence, only when transistor 10 is "on". In this "on" condition, the forward biased base-emitter junction of the transistor presents a low impedance to the detector and essentially all of photodetector current flows through this junction. The~net base current Ib is, therefore, Ib = Id Ipc' where Id is the drive source current. ;
Designating the transistor current gain as ~, the laser current IL, which in the embodiment of FIG. 1 is equal to the collector current Ic, is given by 1~38939 IL ~ Ic-~ ~ (Id Ipc) Designating the fraction of the total laser output intercepted by the photodetector as, f, we derive from .
equations (3) and (4) that IL = ~ ~d ~ fKn (IL T3 (6) .
Solving for IL yields I = ~(Id + fKn IT) (1 + ~fXn) (7) Assuming that one-half the total output power is ~.
used in the feedback loop, i.e., f = 1/2, and using typical values for K, ~ and n, of K = 0.5 m~/mW, ~= 100 and n = 0.6 :
mW/mA, the term fK~n in the denominator is approximately equal to 16. Being much greater than unity, the one in the denominator can be neglected, in which case equation (7) reduces to .~-IL~ IT + Id/fKn. (8) :: :
Substituting equation (7) for IL in equation (~
and making the same approximation as in equation (8), we :.
obtain for the total laser output power .
:
~fK [~ d IT] (9) .:
The first thing to note in equation (9) is that the :
laser output power is to a first order approximation independent of the laser slope efficiency _. The feedback circuit thus provides substantial immunity from changes in this parameter , -either from laser to laser, or from within a given laser.
More accurately, the total laser output power is given by n(~Id ~ IT) (10) 1 + ~fKn Using this more accurate expression, we find that - 5 ~
, - : .. . . : , - , : ~: . . ' . '~
-,, . ... - , . . . ~ , - :::
.
.
1~)38939 the sensitivity of the laser output power to changes in _ with feedback is given by (~fKn) (11) whereas without feedback it is ~n (~Id - IT), (12) which is larger by the factor (~fKn)2 ¦.
Secondly, it is noted that the sensitivity of the laser output to changes in the laser threshold current, to changes in the drive current, and to changes in the transistor current gain is, in each case, significantly reduced.
For example:
(a) The ratios of the change in output power, ~L, to the change in threshold current, ~IT, are given by ~ lK (With feedback) (13) and ~L = _ n (Without feedback). (14) For the parameters given hereinabove, these ratios are -4xlO 2 mW/mA and -60xlO 2 mW/mA, respectively, correspond-ing to a fifteen fold improvement.
(b) The ratios of the change in output power, ~L, to the change in drive current, ~Id, are given by ~ Id fK (With feedback) (15) and ~L = n~ (Without feedback). (16) For the same numerical values, these ratios are ; 4 mW/mA and 60 mW/mA, respectively, thus showing a similar fifteen fold reduction.
(c) The sensitivities of the laser output to changes in the transistor gain are given by ~, ~038939 AL = T (With feedback) t17) and A~ = nId (Without Feedback). (18) For a laser wi~th~a threshold current of 100 mA, ~-nominally operation 10 percent above threshold, we obtain for Id without feedback 1.1 mA, and for equations (14) and (15) ~
values for ~L/~B of 0.04 mW and 0.66 mW, respectively. Thus, -with feedback the sensitivity of the output power to changes in ~is reduced by a factor of approximately 16.
Expressed in terms of the drive current, the output power from the laser is given by L = n~ (Id - IT/~) (Without feedback) (19) and L = (l/fK) (Id - IT/~) (With feedback). (20) To get the same output power with and without feed-back, we equate equations (19) and (20) and obtain Id = n~fKId ~ (n~fK-l) (IT/~). (21) - For the conditions specified above, we find that ~d = 2.5 mA, or that for the same output, the drive current with feedback is 2.27 times the drive current without feedback (Id ~ 1.1 mA). However, what is more significant is the reduced sensitivity of the laser output to changes in driver current and other circuit parameters.
FIG. 3 shows the embodiment of FIG. 1, modified to take into account two matters of practical consideration.
While both matters are taken into account in the illustrative embodiment, the inclusion of either one or the other, or both modifications in any specific case will, of course, depend upon the particular application.
The first of these modifications is a prebiasing circuit comprising a direct current voltage source 20, a resistor 21 and a r.f. choke 22. The prebiasing circuit is ,', ~ .
.~ . .. . .
. .
.. . . . . .
:
1~)38939 connected across laser diode 13 and serves to maintain a minimum bias current Io flowing through the diode. The prebias current, which is less than the threshold current, is provided so to reduce the laser turn-on time.
Also included in the embodiment of FIG. 3 is a second diode 23, such as a Schottky barrier diode, connected across the base-emitter junction of transistor 10. This diode is included to prevent reverse-bias breakdown of the base-emitter junction. It will be noted that both photo-detector 11 and the base-emitter junction of transistor 10 are reverse-biased by direct current voltage source 12. The latter can be as large as 100 volts or greater, which voltage will be div;!ded between the photodetector and the base-emitter junction. To avoid having too large a reverse-bias voltage develop across the latter, diode 23, poled in the forward-bias direction, is connected across the base-emitter junction. This clamps the reverse-bias voltage across the junction at some well-defined, low value. Alternatively, a resistor can be used instead of a diode. The base-emitter voltage in this second case will be determined by the leakage current through the photodetector and the magnitude of the added resistor. If the output imp~dance of the signal source driving transistor 10 is low enough, it will effectively clamp the base-emitter, junction voltage at a safe, low value, in ;~
which case no separate resistor need be added.
The operation of the embodiment of FIG. 3 is substantially the same as described in connection with FIG. ~
1 except that equations (7), (8) and (9) are now given by ~d (Id + fKnIT) + Io (22) (1 + ~fKn) .' ;: '.
: . - - . - . : : ~
16)38939. .
IL ~ IT + fd + ~ o (23) and ~fK [ d ~ T o~ ' (24) respectively.
The sensitivity equations are unaffected except for equation (17) wherein (IT-Io) is substituted for IT.
One assumption implicit in the previous analysis is the timely application of the feedback (i.e., photodetector) current to the base of the transistor. This implies that the total loop delay is at least equal to or faster than the rate at which the output power builds up in the laser diode.
The required rapid response is achieved, in accor-dance with the present invention, by locating the photodetector in the base-emitter circuit of the laser drive transistor In addition, one would advantageously use a fast responding photodetector, and might also shape the drive current pulse to further control the power build up in the laser.
Thus, in all cases it is understood that the above-described arrangements are illustrative of only a small number of the many possible specific embodiments which can , represent applications of the principles of the invention.
Numerous and varied other arrangements can readily be devised in accordance with these principles by those skilled in the art without departing from the spirit and scope of the invention.
.
_ . , - .~ ~ - - ' ~, . . . . . . .
'' . ~ ' '. ~: - ' ,
Claims (4)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. The combination comprising:
a transistor connected in the common emitter configuration;
a radiation emitting diode laser coupled between the collector and emitter electrodes of said transistor;
a photodetector coupled between the base and emitter electrodes of said transistor;
means for coupling a portion of the radiated output power from said diode to said photodetector;
and means for coupling an input signal between said base and emitter electrodes.
a transistor connected in the common emitter configuration;
a radiation emitting diode laser coupled between the collector and emitter electrodes of said transistor;
a photodetector coupled between the base and emitter electrodes of said transistor;
means for coupling a portion of the radiated output power from said diode to said photodetector;
and means for coupling an input signal between said base and emitter electrodes.
2. The combination according to claim 1 wherein said photodetector is a back-biased photodiode.
3. The combination according to claim 1 or 2 including means for limiting the bias developed across the transistor base-emitter junction.
4. The combination according to claim 1 including means for prebiasing said diode.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/550,774 US3946335A (en) | 1975-02-18 | 1975-02-18 | Stabilization circuit for radiation emitting diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1038939A true CA1038939A (en) | 1978-09-19 |
Family
ID=24198518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA245,348A Expired CA1038939A (en) | 1975-02-18 | 1976-02-10 | Stabilization circuit for radiation emitting diodes |
Country Status (7)
Country | Link |
---|---|
US (1) | US3946335A (en) |
JP (1) | JPS5838949B2 (en) |
CA (1) | CA1038939A (en) |
DE (1) | DE2606225A1 (en) |
FR (1) | FR2301939A1 (en) |
GB (1) | GB1532014A (en) |
NL (1) | NL7601601A (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1531263A (en) * | 1975-10-24 | 1978-11-08 | Xerox Corp | Optoelectronic device |
GB1559511A (en) * | 1976-09-14 | 1980-01-23 | Post Office | Injection lasers |
DE2652608C3 (en) * | 1976-11-19 | 1979-12-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Arrangement for regulating the output power of a semiconductor laser |
US4109217A (en) * | 1976-12-10 | 1978-08-22 | Bell Telephone Laboratories, Incorporated | Stabilization circuit for junction lasers |
JPS5414692A (en) * | 1977-07-05 | 1979-02-03 | Fujitsu Ltd | Liminous semiconductor device |
US4237427A (en) * | 1978-06-16 | 1980-12-02 | International Telephone And Telegraph Corporation | Apparatus for stabilizing a laser |
DE2841433C2 (en) * | 1978-09-22 | 1983-08-25 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Bias current regulation of laser diodes |
DE2911858C2 (en) * | 1979-03-26 | 1983-01-13 | Robert Bosch Gmbh, 7000 Stuttgart | Circuit for limiting the light output emitted by a semiconductor laser |
US4348648A (en) * | 1979-07-25 | 1982-09-07 | Optical Information Systems, Inc. | Transient suppression circuit |
US4284960A (en) * | 1979-11-23 | 1981-08-18 | Ampex Corporation | Photo-feedback preamplifier circuit |
US4484331A (en) * | 1981-07-20 | 1984-11-20 | Rca Corporation | Regulator for bias current of semiconductor laser diode |
FR2537782A1 (en) * | 1982-12-14 | 1984-06-15 | Thomson Csf | LIGHT-EMITTING DIODE DEVICE PROVIDED TO REMOVE THE EFFECTS OF CONSTANT THERMAL TIME |
AU575215B2 (en) * | 1984-11-07 | 1988-07-21 | Sumitomo Electric Industries, Ltd. | Optical element output switching |
EP0224185A3 (en) * | 1985-11-19 | 1989-04-26 | Kabushiki Kaisha Toshiba | Laser diode driving circuit |
US5184189A (en) * | 1989-09-26 | 1993-02-02 | The United States Of Americas As Represented By The United States Department Of Energy | Non-intrusive beam power monitor for high power pulsed or continuous wave lasers |
US4995045A (en) * | 1990-02-01 | 1991-02-19 | Northern Telecom Limited | Laser control circuit |
US5473623A (en) * | 1993-12-17 | 1995-12-05 | Quantic Industries, Inc. | Laser diode driver circuit |
US5963570A (en) * | 1997-05-12 | 1999-10-05 | At&T Corp. | Current control for an analog optical link |
JP2006303428A (en) * | 2005-03-25 | 2006-11-02 | Sony Corp | Laser driver, laser light-emitting device, and laser driving method |
US11621774B2 (en) * | 2019-02-20 | 2023-04-04 | The Regents Of The University Of California | Control and prognosis of power electronic devices using light |
-
1975
- 1975-02-18 US US05/550,774 patent/US3946335A/en not_active Expired - Lifetime
-
1976
- 1976-02-10 CA CA245,348A patent/CA1038939A/en not_active Expired
- 1976-02-17 DE DE19762606225 patent/DE2606225A1/en not_active Withdrawn
- 1976-02-17 FR FR7604307A patent/FR2301939A1/en active Granted
- 1976-02-17 NL NL7601601A patent/NL7601601A/en not_active Application Discontinuation
- 1976-02-17 GB GB6059/76A patent/GB1532014A/en not_active Expired
- 1976-02-18 JP JP51016088A patent/JPS5838949B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2301939A1 (en) | 1976-09-17 |
JPS5838949B2 (en) | 1983-08-26 |
FR2301939B1 (en) | 1981-12-24 |
DE2606225A1 (en) | 1976-08-26 |
US3946335A (en) | 1976-03-23 |
NL7601601A (en) | 1976-08-20 |
GB1532014A (en) | 1978-11-15 |
JPS51107785A (en) | 1976-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1038939A (en) | Stabilization circuit for radiation emitting diodes | |
EP0840467B1 (en) | Light emitting device drive circuit | |
US4237427A (en) | Apparatus for stabilizing a laser | |
EP0221710B1 (en) | Apparatus for controlling the power of a laser | |
US4176288A (en) | Zero voltage switching solid state relay | |
EP0617859B1 (en) | Transimpedance amplifier | |
US4506151A (en) | Optoelectronic logic | |
US4110608A (en) | Two-terminal photodetectors with inherent AC amplification properties | |
US4109217A (en) | Stabilization circuit for junction lasers | |
US4270046A (en) | Two-terminal optical sensor | |
US4505582A (en) | Self-detecting optical sensors | |
US4483004A (en) | Laser functional device | |
JP2812874B2 (en) | Optical coupling device | |
US5012084A (en) | Microwave sample-and-hold unit with transistor | |
GB828307A (en) | Improvements in or relating to energy-detectors | |
GB1474071A (en) | Constant-voltage circuit | |
JPS55115383A (en) | Bias circuit for laser diode | |
US3519844A (en) | Electro-optical logic circuits performing nor functions | |
JP3647966B2 (en) | Light intensity control device | |
Miller et al. | A HIGH SPEED TEMPERATURE COMPENSATED LASER DIODE TRANSMITTER FOR DIGITAL APPLICATIONS | |
JPS6182531A (en) | Photocoupler switch | |
Wheatley et al. | Hard limiting opto-electronic logic devices | |
CN113193476A (en) | Automatic current control system of single-wavelength semiconductor laser | |
SU756517A1 (en) | Method of detecting optical signals | |
SU1647920A1 (en) | Digital optoelectronic transmitter |