CA1019834A - Regenerating circuit in the form of a keyed flip-flop - Google Patents

Regenerating circuit in the form of a keyed flip-flop

Info

Publication number
CA1019834A
CA1019834A CA193,294A CA193294A CA1019834A CA 1019834 A CA1019834 A CA 1019834A CA 193294 A CA193294 A CA 193294A CA 1019834 A CA1019834 A CA 1019834A
Authority
CA
Canada
Prior art keywords
keyed
flop
flip
regenerating circuit
regenerating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA193,294A
Other versions
CA193294S (en
Inventor
Karl-Ulrich Stein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1019834A publication Critical patent/CA1019834A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4091Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
CA193,294A 1973-02-23 1974-02-22 Regenerating circuit in the form of a keyed flip-flop Expired CA1019834A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2309192A DE2309192C3 (en) 1973-02-23 1973-02-23 Regenerating circuit in the manner of a keyed flip-flop and method for operating such a regenerating circuit

Publications (1)

Publication Number Publication Date
CA1019834A true CA1019834A (en) 1977-10-25

Family

ID=5872937

Family Applications (1)

Application Number Title Priority Date Filing Date
CA193,294A Expired CA1019834A (en) 1973-02-23 1974-02-22 Regenerating circuit in the form of a keyed flip-flop

Country Status (13)

Country Link
US (1) US3892984A (en)
JP (1) JPS5916350B2 (en)
AT (1) AT339955B (en)
BE (1) BE811463A (en)
CA (1) CA1019834A (en)
CH (1) CH572262A5 (en)
DE (1) DE2309192C3 (en)
FR (1) FR2219492B1 (en)
GB (1) GB1463382A (en)
IT (1) IT1008878B (en)
LU (1) LU69443A1 (en)
NL (1) NL7402393A (en)
SE (1) SE395980B (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US3806898A (en) * 1973-06-29 1974-04-23 Ibm Regeneration of dynamic monolithic memories
US4060737A (en) * 1974-08-22 1977-11-29 Texas Instruments Incorporated Charge coupled device shift registers having an improved regenerative charge detector
US3979603A (en) * 1974-08-22 1976-09-07 Texas Instruments Incorporated Regenerative charge detector for charged coupled devices
DE2443529B2 (en) * 1974-09-11 1977-09-01 Siemens AG, 1000 Berlin und 8000 München PROCEDURE AND ARRANGEMENT FOR WRITING BINARY SIGNALS IN SELECTED MEMORY ELEMENTS OF A MOS MEMORY
US4004284A (en) * 1975-03-05 1977-01-18 Teletype Corporation Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories
US3976895A (en) * 1975-03-18 1976-08-24 Bell Telephone Laboratories, Incorporated Low power detector circuit
US4007381A (en) * 1975-04-18 1977-02-08 Bell Telephone Laboratories, Incorporated Balanced regenerative charge detection circuit for semiconductor charge transfer devices
JPS51122343A (en) * 1975-04-21 1976-10-26 Intel Corp High density mos memory array
US3983413A (en) * 1975-05-02 1976-09-28 Fairchild Camera And Instrument Corporation Balanced differential capacitively decoupled charge sensor
US3982140A (en) * 1975-05-09 1976-09-21 Ncr Corporation High speed bistable multivibrator circuit
US3992637A (en) * 1975-05-21 1976-11-16 Ibm Corporation Unclocked sense ampllifier
US4000413A (en) * 1975-05-27 1976-12-28 Intel Corporation Mos-ram
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US4025908A (en) * 1975-06-24 1977-05-24 International Business Machines Corporation Dynamic array with clamped bootstrap static input/output circuitry
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
DE2634089B2 (en) * 1975-08-11 1978-01-05 CIRCUIT ARRANGEMENT FOR DETECTING WEAK SIGNALS
IT1044685B (en) * 1975-10-17 1980-04-21 Snam Progetti FLEXIBLE MULTIPLE EXPANSION DESALINATION PROCESS
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4096402A (en) * 1975-12-29 1978-06-20 Mostek Corporation MOSFET buffer for TTL logic input and method of operation
JPS52108743A (en) * 1976-03-10 1977-09-12 Toshiba Corp Dynamic memory device
GB1521955A (en) * 1976-03-16 1978-08-23 Tokyo Shibaura Electric Co Semiconductor memory device
US4038567A (en) * 1976-03-22 1977-07-26 International Business Machines Corporation Memory input signal buffer circuit
DE2630797C2 (en) * 1976-07-08 1978-08-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Function generator for generating a voltage at a node to which flip-flops of MOS transistors assigned to the bit lines of a MOS memory are connected
JPS5364434A (en) * 1976-11-19 1978-06-08 Mitsubishi Electric Corp Sense circuit of mos semiconductor memory
JPS5373039A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Sense amplifier
DE2919166C2 (en) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Storage device
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
DE2842547A1 (en) * 1978-09-29 1980-04-10 Siemens Ag CIRCUIT ARRANGEMENT FOR READING AND REGENERATING INFORMATION STORED IN A TRANSISTOR MEMORY ELEMENTS
JPS61244701A (en) * 1985-04-09 1986-10-31 財団法人 雑賀技術研究所 Weighing packaer for powdered and granular material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588846A (en) * 1968-12-05 1971-06-28 Ibm Storage cell with variable power level
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories
US3609710A (en) * 1969-05-29 1971-09-28 Bell Telephone Labor Inc Associative memory cell with interrogation on normal digit circuits
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
US3685027A (en) * 1970-08-19 1972-08-15 Cogar Corp Dynamic mos memory array chip
BE789500A (en) * 1971-09-30 1973-03-29 Siemens Ag SEMICONDUCTOR MEMORY WITH SINGLE TRANSISTOR MEMORIZATION ELEMENTS
DE2165729C3 (en) * 1971-12-30 1975-02-13 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithic memory arrangement that can be operated as read / write or read-only memory
US3771148A (en) * 1972-03-31 1973-11-06 Ncr Nonvolatile capacitive memory cell

Also Published As

Publication number Publication date
JPS5916350B2 (en) 1984-04-14
IT1008878B (en) 1976-11-30
DE2309192B2 (en) 1975-01-09
SE395980B (en) 1977-08-29
NL7402393A (en) 1974-08-27
US3892984B1 (en) 1983-07-05
FR2219492B1 (en) 1980-05-30
JPS49115623A (en) 1974-11-05
GB1463382A (en) 1977-02-02
AT339955B (en) 1977-11-25
US3892984A (en) 1975-07-01
DE2309192A1 (en) 1974-09-05
CH572262A5 (en) 1976-01-30
LU69443A1 (en) 1974-05-29
BE811463A (en) 1974-06-17
FR2219492A1 (en) 1974-09-20
ATA49074A (en) 1977-03-15
DE2309192C3 (en) 1975-08-14

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